WDM optical transmission system and an optical transmission line thereof
    1.
    发明授权
    WDM optical transmission system and an optical transmission line thereof 失效
    WDM光传输系统及其光传输线

    公开(公告)号:US06744990B1

    公开(公告)日:2004-06-01

    申请号:US09434679

    申请日:1999-11-05

    IPC分类号: H04B1012

    摘要: An object of the present invention is to realize almost the same transmission characteristic in all wavelengths at a transmission rate of 10 Gb/s or more. An optical transmitter 10 outputs WDM signal light multiplexed with signal light of a plurality of wavelengths toward an optical transmission line 12. The optical transmission line 12 comprises an optical transmission fiber 14, an optical repeating amplifier 16 and a dispersion compensating fiber 18. The gain characteristic of the optical repeating amplifier 16 is set so that the gain becomes the maximum at the effective zero dispersion wavelength of the optical transmission line 12 and that lowers inversely proportional to the distance from the effective zero dispersion wavelength. The whole optical transmission line 12 is set so that the peak power deviation between the effective zero dispersion wavelength &lgr;0 and the wavelength &lgr;1 or &lgr;n on both end becomes approximately 4 dB.

    摘要翻译: 本发明的目的是以10Gb / s以上的传输速率实现所有波长的几乎相同的传输特性。 光发送器10将与多个波长的信号光复用的WDM信号光输出到光传输线12.光传输线12包括光传输光纤14,光中继放大器16和色散补偿光纤18.增益 光学重复放大器16的特性被设置为使得增益在光传输线路12的有效零色散波长处变为最大值,并且降低与距有效零色散波长的距离成反比。 整个光传输线路12被设置为使得有效零色散波长λ0和两端的波长λ1或兰博丹之间的峰值功率偏差变为大约4dB。

    Optical wavelength division multiplexing device
    2.
    发明授权
    Optical wavelength division multiplexing device 有权
    光波分复用装置

    公开(公告)号:US07236703B1

    公开(公告)日:2007-06-26

    申请号:US10088503

    申请日:2000-07-31

    IPC分类号: H04J14/02

    摘要: As is described above, an optical wavelength division multiplexing and transmission apparatus according to the present invention has the configuration in which a plurality of slave racks coupling to a master rack can be additionally installed one after another with the master rack. Therefore, in cases where it is desired to expand a function of a transmitter and a function of a receiver due to the increase of a quality of information to be transmitted, the additional installation of the slave rack can be performed without exerting influence on a communication means installed in advance and currently used. Accordingly, it can be expected that the optical wavelength division multiplexing and transmission apparatus is adapted for the optical communication service which is more and more increased in the future.

    摘要翻译: 如上所述,根据本发明的光波分复用和发送装置具有这样的配置,其中可以与主机架一个接一个地附加地安装耦合到主机架的多个从机架。 因此,在由于要发送的信息的质量的增加而期望扩展发射机的功能和接收机的功能的情况下,可以执行从机架的附加安装而不对通信产生影响 意味着事先安装,目前使用。 因此,可以预期光波分复用和发送装置适用于将来越来越多的光通信业务。

    Power supply apparatus and power supply method
    3.
    发明授权
    Power supply apparatus and power supply method 有权
    电源装置及电源方式

    公开(公告)号:US08324873B2

    公开(公告)日:2012-12-04

    申请号:US12636764

    申请日:2009-12-13

    IPC分类号: G05F1/613

    CPC分类号: H02M3/1584

    摘要: A power supply apparatus is provided which includes: a first switch provided between an inductor and a terminal to which a reference voltage is applied; a second switch provided between the inductor and an output terminal; a first comparator circuit that compares an input voltage with a first comparison voltage; a signal generating circuit that outputs a frequency signal according to an output from the first comparator circuit; and a first control circuit that controls the first and second switches based on an output from the signal generating circuit to control an electrical current flowing into the inductor.

    摘要翻译: 提供了一种电源装置,其包括:设置在电感器和施加了参考电压的端子之间的第一开关; 设置在电感器和输出端子之间的第二开关; 第一比较器电路,其将输入电压与第一比较电压进行比较; 信号发生电路,其根据来自所述第一比较器电路的输出输出频率信号; 以及第一控制电路,其基于来自信号发生电路的输出来控制第一和第二开关,以控制流入电感器的电流。

    Method for manufacturing semiconductor device
    4.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07910431B2

    公开(公告)日:2011-03-22

    申请号:US12149320

    申请日:2008-04-30

    IPC分类号: H01L21/336

    摘要: On a surface of a Si substrate, a nonvolatile memory cell, an nMOS transistor, and a pMOS transistor are formed, and thereafter an interlayer insulation film covering the nonvolatile memory cell, the nMOS transistor, and the pMOS transistor is formed. Next, in the interlayer insulation film, there are formed plural contact plugs connected respectively to a control gate of the nonvolatile memory cell, a source or a drain of the nMOS transistor, and a source or a drain of the pMOS transistor. Thereafter, there is formed a single-layer wiring connecting the control gate to the sources or drains of the nMOS transistor and the pMOS transistor via the plural contact plugs.

    摘要翻译: 在Si衬底的表面上形成非易失性存储单元,nMOS晶体管和pMOS晶体管,然后形成覆盖非易失性存储单元,nMOS晶体管和pMOS晶体管的层间绝缘膜。 接下来,在层间绝缘膜中,形成有分别连接到非易失性存储单元的控制栅极,nMOS晶体管的源极或漏极以及pMOS晶体管的源极或漏极的多个接触插塞。 此后,形成了通过多个接触插塞将控制栅极连接到nMOS晶体管和pMOS晶体管的源极或漏极的单层布线。

    Semiconductor device with delay correction function
    5.
    发明授权
    Semiconductor device with delay correction function 失效
    具有延迟校正功能的半导体器件

    公开(公告)号:US06720811B2

    公开(公告)日:2004-04-13

    申请号:US10193251

    申请日:2002-07-12

    IPC分类号: H03L700

    摘要: A semiconductor device includes a delay amount measuring unit, multiple delay sections and a correction signal generating unit. The delay amount measuring unit for measures an actual delay amount corresponding to a specified delay amount by supplying a clock signal with a known period to multiple 1-ns-delay strings with a preassigned delay amount, and by detecting phase variations of the clock signal by the 1-ns-delay strings. The delay sections includes a delay string capable of freely adjusting a connection number of its delay elements. The correction signal generating unit generates a correction signal for enabling each of the delay sections to correct the connection number of the delay strings such that each delay section has a desired delay amount, in accordance with the actual delay amount corresponding to the specified delay amount and measured by the delay measuring unit.

    摘要翻译: 半导体器件包括延迟量测量单元,多个延迟部分和校正信号生成单元。 延迟量测量单元,用于通过向具有预分配的延迟量的多个1-ns延迟串提供具有已知周期的时钟信号,并且通过检测时钟信号的相位变化来检测相应于指定延迟量的实际延迟量, 1 ns延迟字符串。 延迟部分包括能够自由地调节其延迟元件的连接数量的延迟串。 校正信号生成单元根据与规定的延迟量对应的实际延迟量,生成用于使每个延迟部分能够校正延迟串的连接数,使得每个延迟部分具有期望的延迟量的校正信号,以及 由延迟测量单元测量。

    Non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions
    9.
    发明授权
    Non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions 有权
    具有具有突出的导电侧壁部分的浮动栅极的非易失性半导体存储器件

    公开(公告)号:US06172394B2

    公开(公告)日:2001-01-09

    申请号:US09302398

    申请日:1999-04-30

    申请人: Shinichi Nakagawa

    发明人: Shinichi Nakagawa

    IPC分类号: H01L29788

    摘要: A non-volatile semiconductor memory device includes memory cells each having a duplicate gate structure in which a floating gate and a control gate are stacked. Each memory cell includes a semiconductor substrate of a first conductivity type; a first gate insulation film formed on the semiconductor substrate; a first conductive film formed on the first gate insulation film and constituting a portion of the floating gate; first and second semiconductor regions of a second conductivity type opposite to the first conductivity type, formed on the semiconductor substrate so as to be self-aligned with side walls of the first conductive film; conductive side-wall portions formed additionally formed on the side walls so as to protrude from a top surface of the first conductive film and to overlap the first and second semiconductor regions, and constituting the remaining portion of the floating gate; a second gate insulation film formed to cover the first conductive film and the conductive side-wall portions; and a second conductive film formed on the second gate insulation film and constituting the control gate. This structure can improve the write efficiency and the erasure efficiency, and reduce the cell area and voltages to be applied to each cell in the write operation and the erasure operation.

    摘要翻译: 非挥发性半导体存储器件包括存储单元,每个存储单元具有重叠的栅极结构,其中堆叠浮置栅极和控制栅极。 每个存储单元包括第一导电类型的半导体衬底; 形成在所述半导体基板上的第一栅极绝缘膜; 形成在第一栅绝缘膜上并构成浮栅的一部分的第一导电膜; 形成在半导体衬底上以与第一导电膜的侧壁自对准的与第一导电类型相反的第二导电类型的第一和第二半导体区域; 导电侧壁部分另外形成在侧壁上以从第一导电膜的顶表面突出并且与第一和第二半导体区域重叠,并且构成浮动栅极的剩余部分; 形成为覆盖所述第一导电膜和所述导电侧壁部的第二栅极绝缘膜; 以及形成在第二栅极绝缘膜上并构成控制栅极的第二导电膜。 该结构可以提高写入效率和擦除效率,并且在写入操作和擦除操作中减小要施加到每个单元的单元面积和电压。

    Process for producing light-absorbing chalcopyrite film
    10.
    发明授权
    Process for producing light-absorbing chalcopyrite film 失效
    光吸收黄铜矿膜生产工艺

    公开(公告)号:US5910336A

    公开(公告)日:1999-06-08

    申请号:US52163

    申请日:1998-03-31

    摘要: An improved process for producing a light-absorbing chalcopyrite film is disclosed, which comprises the steps of: applying at least one solution containing at least either of (a) an organic compound of a metal in Group 1B of the periodic table and (b) an organic compound of a metal in Group 3B of the periodic table on a substrate at least once to thereby form a thin film containing the organic compound (a) and the organic compound (b); heating the thin film in a reducing or inert gas atmosphere to convert the thin film into a thin metal film comprising the Group 1B metal and the Group 3B metal; and heating the thin metal film in an atmosphere containing either an element in Group 6B of the periodic table or a compound thereof to thereby convert the thin metal film into a thin chalcopyrite film. This process eliminates the problem concerning the control of the composition and thickness of a light-absorbing chalcopyrite film, and is suitable for the mass production of homogeneous large light-absorbing plates for use in solar cells.

    摘要翻译: 公开了一种用于制备光吸收黄铜矿膜的改进方法,其包括以下步骤:施加至少一种至少一种包含(a)元素周期表第1B族中的(a)金属有机化合物和(b) 在基板上的元素周期表3B中的金属的有机化合物至少一次,从而形成含有有机化合物(a)和有机化合物(b)的薄膜; 在还原或惰性气体气氛中加热薄膜以将薄膜转变成包含1B族金属和3B族金属的薄金属膜; 并在含有元素周期表第6B族元素或其化合物的气氛中加热薄金属膜,从而将薄金属膜转变为薄黄铜矿膜。 该方法消除了关于光吸收性黄铜矿膜的组成和厚度的控制的问题,并且适用于批量生产用于太阳能电池的均匀的大型吸光板。