公开(公告)号：US20150200692A1

公开(公告)日：2015-07-16

申请号：US14668891

申请日：2015-03-25

Applicant: MediaTek Inc.

Inventor： Hsien-Chyi CHIOU ,  Shu-Ping SHIU ,  Hong-Kai HSU ,  Yuan-Hung CHUNG ,  Wei WANG ,  Ren-yuh LIANG

IPC: H04B1/00 ,  H04W88/06 ,  H04L5/16

CPC classification number: H04W88/06 ,  H04B1/406 ,  H04L5/1469 ,  H04M2250/02 ,  H04M2250/06

Abstract: A system for the coexistence between a plurality of wireless communication modules sharing a single antenna includes an antenna, first and second transceiving paths, and first and second wireless communications modules. The first wireless communications module is coupled to a first transceiving path and transmits or receives first wireless signals via the first transceiving path. The second wireless communications module is coupled to the second transceiving path and transmits and receives second wireless signals via the first and the second transceiving paths, wherein signal strengths of the second wireless signals passing through the second transceiving path are attenuated by a certain level, and the attenuated second wireless signals are added to the first wireless signals when passing through the first transceiving path, wherein one of the first and the second communications module is a LTE module and the other one is a WLAN module.

Abstract translation: 共享单个天线的多个无线通信模块之间共存的系统包括天线，第一和第二收发路径以及第一和第二无线通信模块。 第一无线通信模块耦合到第一收发路径，并经由第一收发路径发送或接收第一无线信号。 第二无线通信模块耦合到第二收发路径，并且经由第一和第二收发路径发送和接收第二无线信号，其中通过第二收发路径的第二无线信号的信号强度衰减一定水平，并且 当经过第一收发路径时，衰减的第二无线信号被添加到第一无线信号，其中第一和第二通信模块中的一个是LTE模块，另一个是WLAN模块。

公开(公告)号：US20160276338A1

公开(公告)日：2016-09-22

申请号：US15167783

申请日：2016-05-27

Applicant: MediaTek Inc.

Inventor： Yuan-Fu CHUNG ,  Chu-Wei HU ,  Yuan-Hung CHUNG

IPC: H01L27/06 ,  H01L29/49 ,  H01L21/324 ,  H01L21/3215 ,  H01L21/265 ,  H01L21/8234 ,  H01L49/02 ,  H01L29/06

CPC classification number: H01L28/20 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/268 ,  H01L21/28035 ,  H01L21/32155 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/8234 ,  H01L21/823437 ,  H01L27/0207 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/167 ,  H01L29/4916

Abstract: An integrated circuit includes a first polysilicon region having a first grain size formed on a substrate. The integrated circuit also includes a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate. The first polysilicon region is doped with a first dopant of a first conductive type and a second dopant selected from elements of group IIIA and group IVA which has an atomic weight heavier than that of silicon.

Abstract translation: 集成电路包括在基板上形成的具有第一晶粒尺寸的第一多晶硅区域。 集成电路还包括形成在基板上的具有与第一晶粒尺寸不同的第二晶粒尺寸的第二多晶硅区域。 第一多晶硅区域掺杂有第一导电类型的第一掺杂剂和选自原子量比硅重量的IIIA族和IVA族元素的第二掺杂物。

公开(公告)号：US20150187757A1

公开(公告)日：2015-07-02

申请号：US14557743

申请日：2014-12-02

Applicant: MediaTek Inc.

Inventor： Yuan-Fu CHUNG ,  Chu-Wei HU ,  Yuan-Hung CHUNG

IPC: H01L27/06 ,  H01L29/49 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/762 ,  H01L49/02 ,  H01L21/28

CPC classification number: H01L28/20 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/268 ,  H01L21/28035 ,  H01L21/32155 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/8234 ,  H01L21/823437 ,  H01L27/0207 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/167 ,  H01L29/4916

Abstract: An integrated circuit includes a first polysilicon region having a first grain size formed on a substrate. The integrated circuit also includes a second polysilicon region, having a second grain size different from the first grain size, formed on the substrate. Furthermore, a method of fabricating an integrated circuit is also provided. The method includes forming a first polysilicon region having an initial grain size on a substrate. The first polysilicon region is implanted with a first dopant of a first conductivity type and a second dopant. After the implantation, the first polysilicon region has a first grain size larger than the initial grain size. Then, a laser rapid thermal annealing process is performed to the first polysilicon region.

Abstract translation: 集成电路包括在基板上形成的具有第一晶粒尺寸的第一多晶硅区域。 集成电路还包括形成在基板上的具有与第一晶粒尺寸不同的第二晶粒尺寸的第二多晶硅区域。 此外，还提供了一种制造集成电路的方法。 该方法包括在衬底上形成具有初始晶粒尺寸的第一多晶硅区域。 第一多晶硅区域注入第一导电类型的第一掺杂剂和第二掺杂剂。 在注入之后，第一多晶硅区域具有比初始晶粒尺寸大的第一晶粒尺寸。 然后，对第一多晶硅区域进行激光快速热退火处理。

公开(公告)号：US20150124362A1

公开(公告)日：2015-05-07

申请号：US14591254

申请日：2015-01-07

Applicant: MediaTek Inc

Inventor： Bo-Shih HUANG ,  Tsung-Ming CHEN ,  Yuan-Hung CHUNG

IPC: H02H3/20

CPC classification number: H02H3/20 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes an impedance device coupled between a pad and a power line and a clamp unit coupled between the pad and a ground line, wherein no ESD current flows through the impedance device when an ESD event occurs at the pad.

Abstract translation: 提供静电放电（ESD）保护电路。 ESD保护电路包括耦合在焊盘和电源线之间的阻抗装置以及耦合在焊盘和接地线之间的夹紧单元，其中当在焊盘处发生ESD事件时，ESD电流不流过阻抗器件。

公开(公告)号：US20160043162A1

公开(公告)日：2016-02-11

申请号：US14886221

申请日：2015-10-19

Applicant: MediaTek Inc.

Inventor： Yuan-Fu CHUNG ,  Chu-Wei HU ,  Yuan-Hung CHUNG

IPC: H01L49/02 ,  H01L21/265 ,  H01L29/167 ,  H01L21/324 ,  H01L21/268 ,  H01L21/266 ,  H01L29/06 ,  H01L27/06 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L28/20 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/268 ,  H01L21/28035 ,  H01L21/32155 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/8234 ,  H01L21/823437 ,  H01L27/0207 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/167 ,  H01L29/4916

Abstract: A method of fabricating an integrated circuit is also provided. The method includes forming a first polysilicon region having an initial grain size on a substrate. The first polysilicon region is implanted with a first dopant of a first conductivity type and a second dopant. After the implantation, the first polysilicon region has a first grain size larger than the initial grain size. Then, a laser rapid thermal annealing process is performed to the first polysilicon region.

Abstract translation: 还提供了一种制造集成电路的方法。 该方法包括在衬底上形成具有初始晶粒尺寸的第一多晶硅区域。 第一多晶硅区域注入第一导电类型的第一掺杂剂和第二掺杂剂。 在注入之后，第一多晶硅区域具有比初始晶粒尺寸大的第一晶粒尺寸。 然后，对第一多晶硅区域进行激光快速热退火处理。

公开(公告)号：US20140328233A1

公开(公告)日：2014-11-06

申请号：US14159218

申请日：2014-01-20

Applicant: MediaTek Inc.

Inventor： Yi-Shing SHIH ,  Che-Hung LIAO ,  Yuan-Hung CHUNG ,  Kun-Chien HUNG ,  Chin-Wei HUANG ,  Wei-Chen WANG ,  Tsai-Yuan HSU ,  Chao-Wen CHOU

IPC: H04W52/02

CPC classification number: H04W52/0229 ,  H04W52/029 ,  Y02D70/142

Abstract: A portable device for receiving broadcast information is provided. A mixer down-converts a radio-frequency signal with a local oscillation clock to provide an intermediate frequency signal. A filter is arranged to filter the intermediate frequency signal. An analog-to-digital converter converts the filtered intermediate frequency signal into a digital signal according to a sampling rate. The broadcast information is obtained according to the digital signal. The local oscillation clock has a first frequency in a normal mode and a second frequency in a power-saving mode, and the second frequency is lower than the first frequency.

Abstract translation: 提供了一种用于接收广播信息的便携式设备。 混频器用本地振荡时钟降频转换射频信号以提供中频信号。 滤波器被布置成对中频信号进行滤波。 模数转换器根据采样率将滤波后的中频信号转换为数字信号。 根据数字信号获得广播信息。 本地振荡时钟在正常模式下具有第一频率，在省电模式下具有第二频率，并且第二频率低于第一频率。

公开(公告)号：US20130114172A1

公开(公告)日：2013-05-09

申请号：US13662851

申请日：2012-10-29

Applicant: MEDIATEK INC.

Inventor： Bo-Shih HUANG ,  Tsung-Ming CHEN ,  Yuan-Hung CHUNG

IPC: H02H3/20

CPC classification number: H02H3/20 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes an impedance device coupled between a pad and a power line and a clamp unit coupled between the pad and a ground line.

Abstract translation: 提供静电放电（ESD）保护电路。 ESD保护电路包括耦合在焊盘和电源线之间的阻抗装置以及耦合在焊盘和接地线之间的夹紧单元。