Abstract:
A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.
Abstract:
An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed. The display cell structures may also have one or more gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A cell may have more than one phosphor, and in particular may have red, green, and blue phosphors selectively arranged. Each pixel site may have one anode of each color phosphor. The phosphors are preferably prepared in situ in an electrically-conductive thin-film or surface-layer form during fabrication of the display. A preferred fabrication process integrates an etch stop with the in situ phosphor process, the etch stop precisely defining the depth of an opening in the display cell structure. Metal oxides or mixed-metal oxides of zinc, copper, tin, or indium are heated in the presence of a refractory metal such as titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, or combinations thereof to make phosphors of various chromaticities, which may also include dopants, such as a lanthanide rare earth element, manganese, chromium, or stoichiometrically excess zinc, copper, tin, or indium. The display is operable when its phosphor is excited by electrons of very low energy.
Abstract:
A phosphor comprises, in atomic percentages, 90% to 100% of a mixed metal oxide MxTyOz, wherein M is a metal selected from Zn, Sn, In, Cu, and combinations thereof, T is a refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and combinations thereof, and O is Oxygen, x, y, and z being chosen such that z is at most stoichiometric for MxTyOz; and 0% to 10% of a dopant comprising a substance selected from a rare earth element of the lanthanide series, Mn, Cr, and combinations thereof, or stoichiometrically excess zinc, copper, tin, or indium. Cathodoluminescent phosphor compositions stimulable by electrons of very low energy are prepared from metal oxides treated with refractory metals in various processes disclosed. Metal oxides or mixed-metal oxides of zinc, copper, tin, or indium are heated in the presence of a refractory metal such as titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, or combinations or alloys thereof to make phosphors of various chromaticities. In a simple embodiment, a quantity of Ta.sub.2 O.sub.5 is added to a quantity of ZnO and heated at an effective temperature and time to form Ta.sub.2 Zn.sub.3 O,, which is useful in various forms as a blue-light-emitting phosphor. In preferred embodiments, the phosphors are prepared in situ in an electrically-conductive thin-film or surface-layer form during fabrication of displays.
Abstract translation:磷光体以原子百分比包含90%至100%的混合金属氧化物M x T y O z,其中M是选自Zn,Sn,In,Cu及其组合的金属,T是选自Ti,Zr, Hf,V,Nb,Ta,Cr,Mo,W及其组合,O是氧,x,y和z,使得z对于M x T y O z为至多化学计量; 以及含有选自镧系元素稀土元素,Mn,Cr及其组合的化合物或化学计量过量的锌,铜,锡或铟的物质的0〜10%的掺杂剂。 由非常低能量的电子刺激的阴极发光荧光体组合物由公开的各种方法由用难熔金属处理的金属氧化物制备。 锌,铜,锡或铟的金属氧化物或混合金属氧化物在钛,锆,铪,钒,铌,钽,铬,钼,钨等难熔金属的存在下被加热,或其组合或合金 以制造各种色度的荧光体。 在一个简单的实施例中,将一定数量的Ta 2 O 5添加到一定量的ZnO中并在有效温度和时间加热以形成Ta 2 Zn 3 O 3,其可用作各种形式作为蓝色发光荧光体。 在优选的实施方案中,在制造显示器期间,以导电薄膜或表面层形式原位制备荧光体。
Abstract:
A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.
Abstract:
An electron field-emission display comprises one or more display cell structures, each having a field-emission cathode and an anode comprising at least one of several cathodoluminescent phosphors disclosed which are stimulable by electrons of very low energy. The display cell structures may also have gate elements for controlling electron current flowing from cathode to anode when suitable electrical bias voltages are applied. A preferred fabrication process integrates an etch stop with an in situ phosphor formation process. The etch stop precisely defines the depth of an opening in the display cell structure. Metal oxides or mixed-metal oxides of zinc, copper, tin, or indium are heated in the presence of a refractory metal such as titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, or combinations thereof to make phosphors of various chromaticities, which may also include dopants, such as a lanthanide rare earth element, manganese, chromium, or stoichiometrically excess zinc, copper, tin, or indium. A blue-light-emitting phosphor embodiment is based on ZnO treated with refractory metals, e.g. Ta, to prepare cathodoluminescent phosphor compositions, e.g. Ta.sub.2 Zn.sub.3 O.sub.8. Selective arrangement of various color phosphors may be made by selective deposition of suitable dopants. The selective deposition may be done, e.g. by chemical vapor deposition with appropriate masking, or by selective ion implantation.
Abstract:
A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodoluminescent phosphor for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.
Abstract:
A device useful as a display element has an electron emitter and an anode disposed to receive electrons emitted from the emitter. The anode has surface portions differing in resistivity, providing an electron sink portion at the surface portion of lowest resistivity. A preferred embodiment has a lateral field-emission electron emitter and has an anode formed by processes specially adapted to provide anode portions of differing resistivity, including the electron sink portion. The electron sink portion is preferably disposed at a position laterally spaced apart from the emitting tip of the device's electron emitter. In a particularly preferred fabrication process, the anode is formed by depositing a base layer, depositing and patterning an etch-stop layer with an opening to define the electron-sink portion, forming an opening by etching overlying layers down to the etch-stop layer, and heating the base layer and etch-stop layer to form an anode surface that includes both an integral electron-sink portion and a cathodoluminescent phosphor for emitting light. The fabrication process provides for fabricating a plurality of display element devices to make a flat panel display.