公开(公告)号：US12062688B2

公开(公告)日：2024-08-13

申请号：US17236865

申请日：2021-04-21

Applicant: Micron Technology, Inc.

Inventor： Richard Beeler ,  Matthew N. Rocklein ,  Timothy A. Quick ,  An-Jen B. Cheng ,  Sumeet C. Pandey

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/55 ,  H01L28/56 ,  H10B12/30

Abstract: Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.

公开(公告)号：US20220344451A1

公开(公告)日：2022-10-27

申请号：US17236865

申请日：2021-04-21

Applicant: Micron Technology, Inc.

Inventor： Richard Beeler ,  Matthew N. Rocklein ,  Timothy A. Quick ,  An-Jen B. Cheng ,  Sumeet C. Pandey

IPC: H01L49/02 ,  H01L27/108

Abstract: Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.

公开(公告)号：US11251261B2

公开(公告)日：2022-02-15

申请号：US16415487

申请日：2019-05-17

Applicant: Micron Technology, Inc.

Inventor： Sanket S Kelkar ,  An-Jen B. Cheng ,  Dojun Kim ,  Christopher W. Petz ,  Matthew N. Rocklein ,  Brenda D. Kraus

IPC: H01L27/108 ,  H01L21/768 ,  H01L49/02

Abstract: Methods, apparatuses, and systems related to forming a barrier material on an electrode are described. An example method includes forming a top electrode of a storage node on a dielectric material in a semiconductor fabrication sequence and forming, in-situ in a semiconductor fabrication apparatus, a barrier material on the top electrode to reduce damage to the dielectric material when ex-situ of the semiconductor fabrication apparatus.

公开(公告)号：US20250159912A1

公开(公告)日：2025-05-15

申请号：US18909685

申请日：2024-10-08

Applicant: Micron Technology, Inc.

Inventor： Dojun Kim ,  Sanket S. Kelkar ,  An-Jen B. Cheng ,  Christopher W. Petz ,  Ryan J. Waskiewicz ,  Michael Mutch ,  Ashwin Panday ,  Sarah bull

IPC: H10D1/00 ,  H10D1/68

Abstract: An apparatus comprising one or more capacitors that comprise a bottom electrode, a high-k dielectric material, and a top electrode. The bottom electrode comprises an oxygen-doped titanium nitride material and one or more undoped titanium nitride materials. The oxygen-doped titanium nitride material is on sidewalls of the one or more undoped titanium nitride materials and the one or more undoped titanium nitride materials extending between sidewalls of the oxygen-doped titanium nitride material. Electronic devices and methods of forming an electronic device are also disclosed.

公开(公告)号：US10985239B2

公开(公告)日：2021-04-20

申请号：US16543065

申请日：2019-08-16

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  An-Jen B. Cheng ,  Fredrick D. Fishburn ,  Sevim Korkmaz ,  Paul A. Paduano

IPC: H01L49/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/02

Abstract: Methods, apparatuses, and systems related to trim a semiconductor structure using oxygen are described. An example method includes forming a support structure for a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing an electrode material within the opening. The method further includes removing portions of the support structure. The method further includes performing a controlled oxidative trim to an upper portion of the electrode material.

公开(公告)号：US12193208B2

公开(公告)日：2025-01-07

申请号：US17647902

申请日：2022-01-13

Applicant: Micron Technology, Inc.

Inventor： Devesh Dadhich Shreeram ,  Kangle Li ,  Matthew N. Rocklein ,  Wei Ching Huang ,  Ping-Cheng Hsu ,  Sevim Korkmaz ,  Sanjeev Sapra ,  An-Jen B. Cheng

IPC: H10B12/00

Abstract: A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.

公开(公告)号：US20210013318A1

公开(公告)日：2021-01-14

申请号：US16509204

申请日：2019-07-11

Applicant: Micron Technology, Inc.

Inventor： An-Jen B. Cheng ,  Brenda D. Kraus ,  Sanket S. Kelkar ,  Matthew N. Rocklein ,  Christopher W. Petz ,  Richard Beeler ,  Dojun Kim

IPC: H01L29/51 ,  H01G4/018 ,  H01L21/02 ,  H01L21/28

Abstract: Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.

公开(公告)号：US12046658B2

公开(公告)日：2024-07-23

申请号：US16509204

申请日：2019-07-11

Applicant: Micron Technology, Inc.

Inventor： An-Jen B. Cheng ,  Brenda D. Kraus ,  Sanket S. Kelkar ,  Matthew N. Rocklein ,  Christopher W. Petz ,  Richard Beeler ,  Dojun Kim

IPC: H01G4/018 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H10B12/00 ,  H01G4/005

CPC classification number: H01L29/517 ,  H01G4/018 ,  H01L21/02156 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/28194 ,  H10B12/30 ,  H01G4/005 ,  H01L21/02164 ,  H01L21/02194

Abstract: Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.

公开(公告)号：US20220238532A1

公开(公告)日：2022-07-28

申请号：US17647902

申请日：2022-01-13

Applicant: Micron Technology, Inc.

Inventor： Devesh Dadhich Shreeram ,  Kangle Li ,  Matthew N. Rocklein ,  Wei Ching Huang ,  Ping-Cheng Hsu ,  Sevim Korkmaz ,  Sanjeev Sapra ,  An-Jen B. Cheng

IPC: H01L27/108

Abstract: A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.

公开(公告)号：US20210050409A1

公开(公告)日：2021-02-18

申请号：US16543065

申请日：2019-08-16

Applicant: Micron Technology, Inc.

Inventor： Matthew N. Rocklein ,  An-Jen B. Cheng ,  Fredrick D. Fishburn ,  Sevim Korkmaz ,  Paul A. Paduano

IPC: H01L49/02 ,  H01L21/285 ,  H01L21/02 ,  H01L21/311

Abstract: Methods, apparatuses, and systems related to trim a semiconductor structure using oxygen are described. An example method includes forming a support structure for a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing an electrode material within the opening. The method further includes removing portions of the support structure. The method further includes performing a controlled oxidative trim to an upper portion of the electrode material.