公开(公告)号：US20230063178A1

公开(公告)日：2023-03-02

申请号：US17564633

申请日：2021-12-29

Applicant: Micron Technology, Inc.

Inventor： Bo Zhao ,  Matthew J. King ,  Jason Reece ,  Michael J. Gossman ,  Shruthi Kumara Vadivel ,  Martin J. Barclay ,  Lifang Xu ,  Joel D. Peterson ,  Matthew Park ,  Adam L. Olson ,  David A. Kewley ,  Xiaosong Zhang ,  Justin B. Dorhout ,  Zhen Feng Yow ,  Kah Sing Chooi ,  Tien Minh Quan Tran ,  Biow Hiem Ong

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

公开(公告)号：US20240304722A1

公开(公告)日：2024-09-12

申请号：US18424704

申请日：2024-01-26

Applicant: Micron Technology, Inc.

Inventor： Darwin A. Clampitt ,  Roger W. Lindsay ,  Martin J. Barclay

IPC: H01L29/78 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L29/7827 ,  H10B41/27 ,  H10B43/27

Abstract: A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, a staircase structure comprising steps comprising horizontal edges of the tiers, each of the steps comprising multiple tiers, and conductive contact structures vertically extending from a vertically upper surface of the stack structure to the conductive structures of the steps, the conductive structures defining each of the steps individually in contact with a conductive contact structure. Related memory devices and electronic systems are also described.

公开(公告)号：US20240071905A1

公开(公告)日：2024-02-29

申请号：US17898107

申请日：2022-08-29

Applicant: Micron Technology, Inc.

Inventor： Martin J. Barclay ,  Mojtaba Asadirad ,  Yiping Wang ,  Matthew Holland ,  Mohad Baboli

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76877 ,  H01L27/11582

Abstract: A microelectronic device comprises a stack structure, a staircase structure, a first liner material, an etch stop structure, and conductive contact structures. The stack structure includes conductive structures and insulative structures arranged in tiers. The stack structure includes sidewalls horizontally bounding the staircase structure. The staircase structure has steps includes edges of tiers of the stack structure. The first liner material is on the steps and the sidewalls and includes horizontally extending portions on the steps and vertically extending portions on the sidewalls. The etch stop structure is on the horizontally extending portions of the first liner material, the vertically extending portions of the first liner material being free of the etch stop structure. The conductive contact structures extend through the etch stop structure and the first liner material and to the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20230397418A1

公开(公告)日：2023-12-07

申请号：US17805167

申请日：2022-06-02

Applicant: Micron Technology, Inc.

Inventor： Zhiqiang Teo ,  Chun Wei Ee ,  Anson Lin ,  Yuwei Ma ,  Martin J. Barclay ,  John D. Hopking ,  Jordan D. Greenlee

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.