公开(公告)号：US08354693B2

公开(公告)日：2013-01-15

申请号：US12035340

申请日：2008-02-21

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

IPC分类号： H01L31/0336

CPC分类号： H01L27/14689 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687

摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.

摘要翻译： 固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。 光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。 提供第四半导体层可以减少在黑暗条件下流动的电流。

公开(公告)号：US08704321B2

公开(公告)日：2014-04-22

申请号：US13462889

申请日：2012-05-03

申请人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

IPC分类号： H01L29/51

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14665 ,  H01L27/14685

摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

摘要翻译： 本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件， 以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。 因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

公开(公告)号：US08243176B2

公开(公告)日：2012-08-14

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

公开(公告)号：US07750366B2

公开(公告)日：2010-07-06

申请号：US12180920

申请日：2008-07-28

申请人： Toru Okino ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Mitsuyoshi Mori

IPC分类号： H01L31/0336 ,  H01L31/109 ,  H01L31/072 ,  H01L31/0328 ,  H01L31/113 ,  H01L31/062 ,  H01L21/324

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.

摘要翻译： 固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。 在分层基板中，形成有多个像素的成像区域和外围电路区域。 在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。 光在层叠基板的反面和正面反射。

公开(公告)号：US20080029796A1

公开(公告)日：2008-02-07

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。

公开(公告)号：US08680640B2

公开(公告)日：2014-03-25

申请号：US13462895

申请日：2012-05-03

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

IPC分类号： H01L27/148

CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464

摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

摘要翻译： 固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。 各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

公开(公告)号：US20100220228A1

公开(公告)日：2010-09-02

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

公开(公告)号：US07638853B2

公开(公告)日：2009-12-29

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L21/00 ,  H01L21/336 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。

公开(公告)号：US08592874B2

公开(公告)日：2013-11-26

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi Mori ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US20090039387A1

公开(公告)日：2009-02-12

申请号：US12180920

申请日：2008-07-28

申请人： Toru Okino ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Mitsuyoshi Mori

IPC分类号： H01L31/0336 ,  H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.

摘要翻译： 固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。 在分层基板中，形成有多个像素的成像区域和外围电路区域。 在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。 光在层叠基板的反面和正面反射。