公开(公告)号：US20220251725A1

公开(公告)日：2022-08-11

申请号：US17170896

申请日：2021-02-09

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO ,  CHIA-HUNG TAI

IPC: C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A method of growing on-axis silicon carbide single crystal includes the steps of (A) sieving a silicon carbide source material by size, and only the part that has a size larger than 1 cm is adopted for use as a sieved silicon carbide source material; (B) filling the sieved silicon carbide source material in the bottom of a graphite crucible; (C) positioning an on-axis silicon carbide on a top of the graphite crucible to serve as a seed crystal; (D) placing the graphite crucible having the sieved silicon carbide source material and the seed crystal received therein in an induction furnace for the physical vapor transport process; (E) starting a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.

公开(公告)号：US20180087186A1

公开(公告)日：2018-03-29

申请号：US15352048

申请日：2016-11-15

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHENG-JUNG KO ,  DAI-LIANG MA ,  BO-CHENG LIN ,  HSUEH-I CHEN ,  BANG-YING YU ,  SHU-YU YEH

IPC: C30B29/36 ,  C30B23/02 ,  C01B31/36

CPC classification number: C30B29/36 ,  C01B32/956 ,  C01B32/963 ,  C04B35/56 ,  C04B35/573 ,  C04B35/65 ,  C30B23/02

Abstract: A method of producing a carbide raw material includes the steps of (A) providing a porous carbon material and a high-purity silicon raw material or a metal raw material and applying the porous carbon material and the high-purity silicon raw material or a metal raw material alternately to form a layer structure; (B) putting the layer structure in a synthesis furnace to undergo a gas evacuation process; and (C) producing a carbide raw material with a synthesis reaction which the layer structure undergoes in an inert gas atmosphere, wherein the carbide raw material is a carbide powder of a particle diameter of less than 300 μm, thereby preventing secondary raw material contamination otherwise arising from comminution, oxidation and acid rinsing.

公开(公告)号：US20240239712A1

公开(公告)日：2024-07-18

申请号：US18096568

申请日：2023-01-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHIH-HSING WANG ,  CHENG-JUNG KO ,  CHUEN-MING GEE ,  CHIH-WEI KUO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO

IPC: C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/645

CPC classification number: C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C30B35/002

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

公开(公告)号：US20190186045A1

公开(公告)日：2019-06-20

申请号：US15904694

申请日：2018-02-26

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： BANG-YING YU ,  HSUEH-I CHEN ,  DAI-LIANG MA ,  CHENG-JUNG KO

IPC: C30B35/00 ,  C30B29/36 ,  C23C16/32 ,  C23C14/06

CPC classification number: C30B35/007 ,  C23C14/0635 ,  C23C16/325 ,  C30B29/36

Abstract: A device for growing a carbide of specific shape includes (A) a crucible; (B) a raw material source zone where a SiC raw material precursor is accessible; (C) a deposition zone where SiC is grown; (D) a gas temperature gradient control zone characterized by a temperature gradient; (E) a current deposition carrier disposed within the deposition zone and characterized by at least one repetition of a succession of one or at least two specific shapes of the current deposition carrier; and (F) a heating component for heating the SiC raw material precursor to turn it into gas molecules, so as to effectuate its deposition on the current deposition carrier.

公开(公告)号：US20230227998A1

公开(公告)日：2023-07-20

申请号：US17579604

申请日：2022-01-20

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： HSUEH-I CHEN ,  CHENG-JUNG KO ,  CHIH-WEI KUO ,  JUN-BIN HUANG ,  CHIA-HUNG TAI

IPC: C30B29/36 ,  H01L21/205 ,  H01L21/02

CPC classification number: C30B29/36 ,  H01L21/205 ,  H01L21/02167 ,  H01L21/02656

Abstract: Provides a method for adjusting a thermal field of silicon carbide single crystal growth, and steps comprise: (A) screening a silicon carbide source, and filling into a bottom of a graphite crucible; (B) placing a guide inside the graphite crucible; (C) placing a rigid heat conductive material on the guide, so that a gap between the guide and a crucible wall of the graphite crucible is reduced; (D) fixing a seed crystal on a top of the graphite crucible; (E) placing the graphite crucible equipped with the silicon carbide source and the seed crystal in an induction high-temperature furnace used by physical vapor transport method; (F) performing a silicon carbide crystal growth process; and (G) obtaining a silicon carbide single crystal.

公开(公告)号：US20180057925A1

公开(公告)日：2018-03-01

申请号：US15353000

申请日：2016-11-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  HSUEH-I CHEN ,  BO-CHENG LIN ,  CHENG-JUNG KO ,  YING-CONG ZHAO ,  CHIH-WEI KUO ,  SHU-YU YEH

IPC: C23C14/24 ,  C30B23/02 ,  C30B23/06 ,  C30B29/36 ,  C30B29/40 ,  C23C14/06 ,  C23C14/26

CPC classification number: C23C14/243 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/26 ,  C30B23/00 ,  C30B23/002 ,  C30B23/025 ,  C30B23/06 ,  C30B23/066 ,  C30B29/36 ,  C30B29/403

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

公开(公告)号：US20230167579A1

公开(公告)日：2023-06-01

申请号：US17537521

申请日：2021-11-30

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  CHIA-HUNG TAI

IPC: C30B23/06 ,  C30B29/36 ,  C30B35/00

CPC classification number: C30B23/066 ,  C30B29/36 ,  C30B35/002

Abstract: Provided is a method of enhancing silicon carbide monocrystalline growth yield, including the steps of: (A) filling a bottom of a graphite crucible with a silicon carbide raw material selected; (B) performing configuration modification on a graphite seed crystal platform; (C) fastening a silicon carbide seed crystal to the modified graphite seed crystal platform with a graphite clamping accessory; (D) placing the graphite crucible containing the silicon carbide raw material and the silicon carbide seed crystal in an inductive high-temperature furnace; (E) performing silicon carbide crystal growth process by physical vapor transport; and (F) obtaining silicon carbide monocrystalline crystals. The geometric configuration of the surface of the graphite seed crystal platform is modified to eradicate development of peripheral grain boundary.

公开(公告)号：US20160168750A1

公开(公告)日：2016-06-16

申请号：US14565456

申请日：2014-12-10

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： DAI-LIANG MA ,  TSAO-CHUN PENG ,  BANG-YING YU ,  HSUEH-I CHEN ,  JUN-BIN HUANG

IPC: C30B23/06 ,  C30B25/10 ,  C30B25/16 ,  C23C14/00 ,  C23C16/32 ,  C23C16/01 ,  C23C14/06 ,  C01B31/36 ,  C30B29/36

CPC classification number: C30B23/066 ,  C01B32/956 ,  C23C14/0005 ,  C23C14/0635 ,  C23C14/228 ,  C23C14/5853 ,  C30B29/36

Abstract: A method of producing a high-purity carbide mold includes the steps of (A) providing a template; (B) putting the template at a deposition region in a growth chamber; (C) putting a carbide raw material in the growth chamber; (D) providing a heating field; (E) introducing a gas; (F) depositing the carbide raw material; and (G) removing the template. The method is able to produce a mold from a high-purity carbide with a purity of 93% or above and therefore is effective in solving known problems with carbide molds, that is, low hardness and low purity.

Abstract translation: 制造高纯度碳化物模具的方法包括以下步骤：（A）提供模板; （B）将模板放置在生长室中的沉积区域; （C）将碳化物原料放入生长室内; （D）提供加热场; （E）引入气体; （F）沉积碳化物原料; 和（G）删除模板。 该方法能够从纯度为93％以上的高纯度碳化物制造模具，因此有效地解决了碳化物模具的已知问题，即低硬度和低纯度。