公开(公告)号：US20190007026A1

公开(公告)日：2019-01-03

申请号：US16126248

申请日：2018-09-10

Applicant: Murata Manufacturing Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Keiichi Umeda ,  Takaaki Mizuno ,  Yasuhiro Aida ,  Masato Uehara ,  Toshimi Nagase ,  Morito Akiyama

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/05 ,  H03H9/13 ,  H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316

Abstract: A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.

公开(公告)号：US11999615B2

公开(公告)日：2024-06-04

申请号：US17415691

申请日：2019-12-27

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenji Hirata ,  Hiroshi Yamada ,  Masato Uehara ,  Sri Ayu Anggraini ,  Morito Akiyama

IPC: C01B21/06 ,  H10N30/20 ,  H10N30/85

CPC classification number: C01B21/0602 ,  H10N30/20 ,  H10N30/85

Abstract: An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.

公开(公告)号：US09972769B2

公开(公告)日：2018-05-15

申请号：US14732988

申请日：2015-06-08

Applicant: Murata Manufacturing Co., Ltd. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiichi Umeda ,  Atsushi Honda ,  Morito Akiyama ,  Toshimi Nagase ,  Keiko Nishikubo ,  Masato Uehara

IPC: H01L41/187 ,  H01L41/316 ,  H01L41/08 ,  C23C14/06 ,  C23C14/34 ,  H03H3/02 ,  H03H9/02

CPC classification number: H01L41/316 ,  C23C14/0641 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/187 ,  H03H3/02 ,  H03H9/02031

Abstract: A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.

公开(公告)号：US20150357555A1

公开(公告)日：2015-12-10

申请号：US14732988

申请日：2015-06-08

Applicant: Murata Manufacturing Co., Ltd. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Keiichi Umeda ,  Atsushi Honda ,  Morito Akiyama ,  Toshimi Nagase ,  Keiko Nishikubo ,  Masato Uehara

IPC: H01L41/316 ,  C23C14/06 ,  C23C14/34 ,  H01L41/18 ,  H01L41/08

CPC classification number: H01L41/316 ,  C23C14/0641 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/187 ,  H03H3/02 ,  H03H9/02031

Abstract: A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.

Abstract translation: 一种包含含有镁和铪的氮化铝的压电薄膜，其中，基于所述镁的100原子％的铪的含量为8原子％以上且小于100原子％，所述镁和铪的总含量基于 镁，铪和铝的含量之和为47原子％以下。

公开(公告)号：US11968902B2

公开(公告)日：2024-04-23

申请号：US17276464

申请日：2019-11-26

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masato Uehara ,  Hiroshi Yamada ,  Morito Akiyama ,  Sri Ayu Anggraini ,  Kenji Hirata

IPC: H01L41/18 ,  B81B3/00 ,  H10N30/30 ,  H10N30/50 ,  H10N30/80

CPC classification number: H10N30/302 ,  B81B3/0018 ,  H10N30/50 ,  H10N30/80 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264

Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.

公开(公告)号：US11451211B2

公开(公告)日：2022-09-20

申请号：US16126248

申请日：2018-09-10

Applicant: Murata Manufacturing Co., Ltd. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Keiichi Umeda ,  Takaaki Mizuno ,  Yasuhiro Aida ,  Masato Uehara ,  Toshimi Nagase ,  Morito Akiyama

IPC: H01L41/047 ,  H03H9/17 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/08 ,  H03H3/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/02 ,  H03H9/15

Abstract: A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.