公开(公告)号：US20190172813A1

公开(公告)日：2019-06-06

申请号：US16321282

申请日：2017-05-15

Applicant: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Jun UTSUMI ,  Kensuke IDE ,  Takenori SUZUKI ,  Takayuki GOTO ,  Hideki TAKAGI ,  Yuuichi KURASHIMA

IPC: H01L23/00 ,  H01L21/263

Abstract: Provided is a substrate bonding method for bonding a first substrate (11) and a second substrate (12) by sputter-etching, the substrate bonding method comprising: an activation step in which the surface of a first substrate (11) is irradiated with a beam (2) of ion particles of a gas (1) such as Ar and sputter-etched to thereby deposit sputtered particles (Ms) from the first substrate (11) on the surface of a second substrate (12), the first substrate (11) comprising at least one among a semiconductor material, a compound semiconductor material, and a metal material; and a bonding step in which the surface of the second substrate (12), on which the sputtered particles (Ms) from the first substrate (11) are deposited, and the surface of the substrate (11), which is sputter-etched, are overlapped and bonded with each other.

公开(公告)号：US20240276626A1

公开(公告)日：2024-08-15

申请号：US18568770

申请日：2022-03-24

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yuuichi KURASHIMA ,  Taisei MOTOMURA ,  Shinya YANAGIMACHI ,  Hideki TAKAGI ,  Eiji HIGURASHI ,  Takashi MATSUMAE

IPC: H05H1/10 ,  G04F5/14 ,  H03L7/26

CPC classification number: H05H1/10 ,  G04F5/14 ,  H03L7/26

Abstract: A small plasma source that enables highly efficient discharge in an ultra-high vacuum state includes a first magnet, a second magnet arranged so that a second magnetic pole faces the first magnetic pole of the first magnet, a third magnet having the second magnetic pole directed in the same direction as the first magnetic pole of the first magnet and arranged to surround the first magnet, a fourth magnet having the first magnetic pole different from the second magnetic pole facing the second magnetic pole of the third magnet and arranged to surround the second magnet, a first electrode provided on sides of the first magnetic pole of the first magnet and the second magnetic pole of the third magnet, a second electrode facing the first electrode and provided on sides of the second magnetic pole of the second magnet and the first magnetic pole of the fourth magnet, and a third electrode arranged between the first electrode and the second electrode. A value obtained by dividing a shorter distance between a distance between the first magnet and the second magnet and a distance between the third magnet and the fourth magnet by an average value of thicknesses of the first to fourth magnets is 1 or more and 10 or less.

公开(公告)号：US20160204023A1

公开(公告)日：2016-07-14

申请号：US14902764

申请日：2014-07-03

Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Ko IMAOKA ,  Motoki KOBAYASHI ,  Hidetsugu UCHIDA ,  Kuniaki YAGI ,  Takamitsu KAWAHARA ,  Naoki HATTA ,  Akiyuki MINAMI ,  Toyokazu SAKATA ,  Tomoatsu MAKINO ,  Hideki TAKAGI ,  Yuuichi KURASHIMA

IPC: H01L21/762 ,  H01L29/16

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76254 ,  H01L29/1608

Abstract: A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Abstract translation: 本文公开的技术涉及具有接合界面高的接合界面的半导体基板的制造方法，而在不具有几乎不平坦化的表面的基板上，在接合界面处也不形成氧化物层。 半导体衬底的制造方法可以包括非晶层形成工艺，其中通过修饰支撑衬底的表面形成第一非晶层，并且通过改变半导体的单晶层的表面形成第二非晶层 。 制造方法可以包括其中第一非晶层和第二非晶层彼此接触的接触工艺。 制造方法可以包括其中第一非晶层和第二非晶层彼此接触地对支撑基板和单晶层进行热处理的热处理工艺。

公开(公告)号：US20240258195A1

公开(公告)日：2024-08-01

申请号：US18565295

申请日：2022-05-31

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  MITSUBISHI ELECTRIC CORPORATION

Inventor： Hideaki YAMADA ,  Akiyoshi CHAYAHARA ,  Yoshiaki MOKUNO ,  Takashi MATSUMAE ,  Yuuichi KURASHIMA ,  Eiji HIGURASHI ,  Hideki TAKAGI ,  Shuichi HIZA ,  Ken IMAMURA ,  Yusuke SHIRAYANAGI ,  Koji YOSHITSUGU ,  Kunihiko NISHIMURA

IPC: H01L23/373 ,  B32B9/00 ,  B32B9/04 ,  B32B37/18 ,  B32B38/00 ,  C30B29/04 ,  C30B29/40 ,  C30B33/00 ,  H01L23/00

CPC classification number: H01L23/3732 ,  B32B9/007 ,  B32B9/04 ,  B32B37/18 ,  C30B29/04 ,  C30B29/406 ,  C30B33/00 ,  H01L24/32 ,  H01L24/83 ,  B32B2038/0064 ,  B32B2457/14 ,  H01L2224/32225 ,  H01L2224/83005

Abstract: This bonded body (10) comprising a mosaic diamond wafer and a semiconductor of a different type is a bonded body in which a mosaic diamond wafer (1) having a coalescence boundary (B1) between a plurality of single-crystal diamond substrates (1A and 1B) and a semiconductor of a different type (2) are bonded together, in which a maximum level difference on a bonding surface (1aa) of the mosaic diamond wafer (1) with the semiconductor of a different type (2) is 10 nm or less.

公开(公告)号：US20240149565A1

公开(公告)日：2024-05-09

申请号：US18550096

申请日：2022-02-18

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi MATSUMAE ,  Hideki TAKAGI ,  Hitoshi UMEZAWA ,  Yuuichi KURASHIMA ,  Eiji HIGURASHI

IPC: B32B18/00 ,  H01L23/373

CPC classification number: B32B18/00 ,  H01L23/3738

Abstract: There is provided a silicon carbide composite body that can be expected to have efficient heat conduction and electrical conduction between bonding base materials. The silicon carbide composite body includes a first base material including silicon carbide having a silicon oxide layer SiOx formed on the surface and a second base material which has an oxide layer MOy with an element M, which is one or more of metals that forms an oxide in the atmosphere (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, and C in diamond on the surface, and is bonded to the first base material such that the MOy side faces the SiOx side, and when at least some of C in silicon carbide forms C—O-M bonds and/or at least some of Si in the silicon carbide forms Si—O−M bonds, the second base material is bonded to the first base material.

公开(公告)号：US20220230934A1

公开(公告)日：2022-07-21

申请号：US17609919

申请日：2020-04-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi MATSUMAE ,  Hitoshi UMEZAWA ,  Yuuichi KURASHIMA ,  Hideki TAKAGI

IPC: H01L23/373 ,  C30B33/06 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16

Abstract: A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O-C bonding of at least some C atoms of the (111) surface of the diamond crystal base.