摘要:
The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译:本发明提供一种半导体结构,其至少包括具有α型晶体结构的p型碳化硅单晶层,其含有杂质浓度为1×1019 cm -3以上的铝,厚度为50μm,或 更大 还提供了一种制造本发明的半导体结构的方法,该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体,其中外延生长步骤在1500℃至1,700℃的温度条件下进行,压力条件为5×10 3 Pa至25×10 3 Pa。
摘要:
The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译:本发明提供一种半导体结构,其至少包括具有α型晶体结构的p型碳化硅单晶层,其含有杂质浓度为1×1019 cm -3以上的铝,厚度为50μm,或 更大 还提供了一种制造本发明的半导体结构的方法,该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体,其中外延生长步骤在1500℃至1,700℃的温度条件下进行,压力条件为5×10 3 Pa至25×10 3 Pa。