公开(公告)号：US09496345B2

公开(公告)日：2016-11-15

申请号：US14418897

申请日：2013-07-31

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kazutoshi Kojima ,  Shiyang Ji ,  Tetsuya Miyazawa ,  Hidekazu Tsuchida ,  Koji Nakayama ,  Tetsuro Hemmi ,  Katsunori Asano

IPC分类号： H01L29/15 ,  H01L29/10 ,  H01L29/66 ,  H01L29/16 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02 ,  H01L29/04 ,  H01L29/167 ,  H01L29/739 ,  H01L21/04

CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/167 ,  H01L29/66068 ,  H01L29/7393 ,  H01L29/7395

摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.

摘要翻译： 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。

公开(公告)号：US20150214306A1

公开(公告)日：2015-07-30

申请号：US14418897

申请日：2013-07-31

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

发明人： Kazutoshi Kojima ,  Shiyang Ji ,  Tetsuya Miyazawa ,  Hidekazu Tsuchida ,  Koji Nakayama ,  Tetsuro Hemmi ,  Katsunori Asano

IPC分类号： H01L29/16 ,  H01L29/04 ,  C30B29/36 ,  H01L21/02 ,  C30B25/20 ,  H01L29/167 ,  H01L29/739

CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0259 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/167 ,  H01L29/66068 ,  H01L29/7393 ,  H01L29/7395

摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.

摘要翻译： 本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或 更大 还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。

公开(公告)号：US10741648B2

公开(公告)日：2020-08-11

申请号：US16308913

申请日：2017-06-02

申请人： National Institute of Advanced Industrial Science and Technology ,  Hitachi, LTD. ,  Fuji Electric Co., Ltd ,  Mitsubishi Electric Corporation

发明人： Ryoji Kosugi ,  Shiyang Ji ,  Kazuhiro Mochizuki ,  Yasuyuki Kawada ,  Hidenori Kouketsu

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/12 ,  H01L21/02 ,  H01L21/308 ,  H01L29/04

摘要： A manufacturing yield and reliability of a semiconductor device including a power semiconductor element is improved. A plurality of trenches DT extending in an x direction and spaced apart from each other in a y direction orthogonal to the x direction are formed in a substrate having a main crystal surface tilted with respect to a direction. Also, a super-junction structure is constituted of a p-type column region PC made of a semiconductor layer embedded in the trench DT and an n-type column region NC made of a part of the substrate between the trenches DT adjacent in the y direction, and an angle error between the extending direction of the trench DT (x direction) and the direction is within ±θ. The θ is determined by {arctan {k× (w/h)}}/13 for the trench having a height of h and a width of w. Herein, the k is at least smaller than 2, preferably 0.9 or less, more preferably 0.5 or less, and still more preferably 0.3 or less.

公开(公告)号：US20190157399A1

公开(公告)日：2019-05-23

申请号：US16308913

申请日：2017-06-02

申请人： National Institute of Advanced Industrial Science and Technology ,  Hitachi, LTD. ,  Fuji Electric Co., Ltd. ,  Mitsubishi Electric Corporation

发明人： Ryoji Kosugi ,  Shiyang Ji ,  Kazuhiro Mochizuki ,  Yasuyuki Kawda ,  Hidenori Kouketsu

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/04 ,  H01L21/308 ,  H01L21/02

CPC分类号： H01L29/1608 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02636 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/12 ,  H01L29/78

摘要： A manufacturing yield and reliability of a semiconductor device including a power semiconductor element is improved. A plurality of trenches DT extending in an x direction and spaced apart from each other in a y direction orthogonal to the x direction are formed in a substrate having a main crystal surface tilted with respect to a direction. Also, a super-junction structure is constituted of a p-type column region PC made of a semiconductor layer embedded in the trench DT and an n-type column region NC made of a part of the substrate between the trenches DT adjacent in the y direction, and an angle error between the extending direction of the trench DT (x direction) and the direction is within ±θ. The θ is determined by {arctan {k× (w/h)}}/13 for the trench having a height of h and a width of w. Herein, the k is at least smaller than 2, preferably 0.9 or less, more preferably 0.5 or less, and still more preferably 0.3 or less.