公开(公告)号：US09349819B2

公开(公告)日：2016-05-24

申请号：US14714927

申请日：2015-05-18

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/47 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。

公开(公告)号：US20130240999A1

公开(公告)日：2013-09-19

申请号：US13872478

申请日：2013-04-29

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  NXP B.V.

Inventor： Alexandre Mondot ,  Markus Mueller ,  Thomas Kormann

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/823814 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/28052 ,  H01L21/28097 ,  H01L21/823828 ,  H01L27/0922 ,  H01L29/4933 ,  H01L29/4975

Abstract: A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. Several devices are, thus, provided. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.

Abstract translation: 在Si或SiGe表面上选择性沉积Si或SiGe的方法根据第一和第二表面区域的掺杂差异来利用物理化学表面行为的差异。 通过提供具有适当浓度范围的硼掺杂的至少一个第一表面区域，并且在低于或等于800℃的温度下在预烘烤步骤中将衬底表面暴露于清洁和钝化环境气氛，随后的沉积步骤 Si或SiGe不会导致第一表面区域中的层沉积。 该效应用于在不掺杂硼的合适浓度范围内或掺杂有另一掺杂剂的第二表面区域中选择性沉积Si或SiGe，或不掺杂。 因此，提供了几个设备。 因此，该方法节省了根据现有技术在第二表面区域中选择性沉积Si或SiGe所需的常规光刻序列。

公开(公告)号：US20160020296A1

公开(公告)日：2016-01-21

申请号：US14714927

申请日：2015-05-18

Applicant: NXP B.V.

Inventor： Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/47 ,  H01L21/02 ,  H01L29/40

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

公开(公告)号：US20150236095A1

公开(公告)日：2015-08-20

申请号：US14703731

申请日：2015-05-04

Applicant: NXP B.V. ,  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Markus Mueller ,  Anco Heringa

IPC: H01L29/10 ,  H01L29/205 ,  H01L29/12 ,  H01L29/20 ,  H01L29/778 ,  H01L29/872

CPC classification number: H01L29/1054 ,  H01L21/02104 ,  H01L29/0657 ,  H01L29/122 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/872

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.

Abstract translation: 半导体器件及其制造方法。 该器件包括在GaN层上具有AlGaN层的半导体衬底。 该装置还包括第一接触和第二接触。 AlGaN层的平均厚度在第一接触和第二接触之间变化，用于调制第一接触和第二接触之间的GaN层中的电子气的密度。

公开(公告)号：US09064847B2

公开(公告)日：2015-06-23

申请号：US13895228

申请日：2013-05-15

Applicant: NXP B.V.

Inventor： Godefridus Andrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Johannes Josephus Theodorus Marinus Donkers ,  Jan Sonsky ,  Stephen John Sque ,  Andreas Bernardus Maria Jansman ,  Markus Mueller ,  Stephan Heil ,  Tim Boettcher

IPC: H01L29/47 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/40 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/475 ,  H01L21/02362 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/417 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/872

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种包括13族氮化物异质结的半导体器件，其包括具有第一带隙的第一层和具有第二带隙的第二层，其中第一层位于衬底和第二层之间; 以及肖特基电极和第一另外的电极，每个导体耦合到所述异质结的不同区域，所述肖特基电极包括中心区域和边缘区域，其中所述元件包括仅位于所述肖特基电极的所述边缘区域下方的导电阻挡部分 用于局部增加肖特基电极的肖特基势垒。 还公开了制造这种半导体器件的方法。