公开(公告)号：US06944929B2

公开(公告)日：2005-09-20

申请号：US10698917

申请日：2003-10-31

申请人： Noriaki Ogawa ,  Masato Akachi ,  Akihiko Ookubo ,  Hisashi Ueno ,  Takashi Miyamoto

发明人： Noriaki Ogawa ,  Masato Akachi ,  Akihiko Ookubo ,  Hisashi Ueno ,  Takashi Miyamoto

IPC分类号： H01F7/06 ,  H02K1/27 ,  H02K15/03 ,  B23P25/00 ,  H02K15/02

CPC分类号： H01F7/06 ,  H02K1/2786 ,  H02K15/03 ,  Y10T29/49012 ,  Y10T29/4902 ,  Y10T29/49075 ,  Y10T29/49885 ,  Y10T29/49995 ,  Y10T156/1038

摘要： A plurality of grooves 25 are formed in an outer peripheral surface of a cylindrical rubber magnet 17. The grooves 25 extend in a direction in which the cylindrical rubber magnet 17 is inserted into a yoke 3. The grooves 25 are open on both ends in the direction of insertion and are also open outwardly in a radial direction of the cylindrical rubber magnet 17. The grooves are formed at predetermined intervals in a peripheral direction of the cylindrical rubber magnet 17. When the cylindrical rubber magnet 17 is inserted into the yoke 3, an adhesive 15 gets into the grooves 25 without being pushed out of a lower end surface 21 of the cylindrical rubber magnet 17. The adhesive located between adjacent grooves also readily gets into the grooves 25. By presence of the adhesive got into the grooves 25, a necessary and sufficient amount of the adhesive can be uniformly interposed between a peripheral wall section 11 of the yoke 3 and the cylindrical rubber magnet 17.

摘要翻译： 在圆筒形橡胶磁体17的外周面上形成有多个槽25.槽25沿圆筒形橡胶磁铁17插入轭3的方向延伸。槽25在两端形成开口 插入方向也沿圆筒形橡胶磁铁17的径向向外敞开。在圆筒形橡胶磁铁17的圆周方向上以预定的间隔形成凹槽。当圆柱形橡胶磁体17插入磁轭3时， 粘合剂15不会从圆筒形橡胶磁铁17的下端面21被推出而进入槽25中。位于相邻槽之间的粘合剂也容易进入凹槽25.通过存在进入凹槽25的粘合剂， 可以将足够量的粘合剂均匀地插入在轭3的周壁部11和圆筒形橡胶磁体17之间。

公开(公告)号：US5544120A

公开(公告)日：1996-08-06

申请号：US224905

申请日：1994-04-07

申请人： Masaaki Kuwagata ,  Ryosuke Matsuo ,  Keiji Maruyama ,  Naokazu Miyawaki ,  Hisashi Ueno

发明人： Masaaki Kuwagata ,  Ryosuke Matsuo ,  Keiji Maruyama ,  Naokazu Miyawaki ,  Hisashi Ueno

IPC分类号： G11C11/403 ,  G11C11/406 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H03K3/03 ,  H03K3/354 ,  H03B5/00

CPC分类号： G11C11/406 ,  H03K3/0315 ,  H03K3/354

摘要： A semiconductor integrated circuit includes a bias voltage regulation circuit having variable resistors which are provided between voltage output circuits of higher and lower potential sides and changes corresponding to a specified condition such as V.sub.CC and a temperature. The variable resistors and bias voltage output circuits form a V.sub.CC divider, and the variable resistors properly regulate a bias voltage supplied to an oscillation circuit corresponding to each of the specified conditions. Accordingly, if the oscillation circuit is used in an automatic refresh circuit of a PSRAM, an increase of a refresh operation frequency is suppressed regardless of an increase in V.sub.CC. Since a temperature depending variable resistor causes a resistance value to be reduced by the predetermined characteristics against the temperature increase, it is possible to set an oscillation frequency to provide a desired pause for guarantee of circuit operation. It is possible to provide a ring oscillator having a low dependency of the oscillation frequency on a power source voltage and a temperature characteristic, thereby decreasing its current consumption.

摘要翻译： 半导体集成电路包括具有可变电阻器的偏置电压调节电路，其设置在较高和较低电位侧的电压输出电路之间，并且对应于诸如VCC和温度的指定条件的变化。 可变电阻器和偏置电压输出电路形成VCC分压器，并且可变电阻器适当地调节提供给对应于每个指定条件的振荡电路的偏置电压。 因此，如果在PSRAM的自动刷新电路中使用振荡电路，则与VCC的增加无关地抑制刷新操作频率的增加。 由于温度依赖可变电阻器使得电阻值相对于温度升高降低预定特性，因此可以设置振荡频率以提供期望的暂停以保证电路操作。 可以提供一种振荡频率对电源电压和温度特性的低依赖性的环形振荡器，从而降低其电流消耗。

公开(公告)号：US06224712B1

公开(公告)日：2001-05-01

申请号：US09023209

申请日：1998-02-13

申请人： Hisashi Ueno

发明人： Hisashi Ueno

IPC分类号： C23F102

CPC分类号： B24B37/32 ,  H01L21/30625

摘要： A polishing apparatus can stabilize polishing speed at the peripheral end portion of a polishing object, such as a wafer for fabricating a semiconductor device. The polishing apparatus performs polishing by arranging the polishing object in opposition to an abrasive cloth on a rotary polishing table, applying a load on a polishing block and with supplying a polishing fluid. A ring-shaped retainer is provided for embracing a given thickness of a elastic buffering plate provided between the polishing object fixing block and the polishing object for making contact pressure between the polishing object and the abrasive plate uniform and whereby for making a polishing speed of the polishing object constant.

摘要翻译： 抛光装置可以稳定研磨对象的周边端部的抛光速度，例如用于制造半导体器件的晶片。 抛光装置通过将抛光对象与研磨布相对地布置在旋转抛光台上，在抛光块上施加负载并且提供抛光液来进行抛光。 提供了一种环形保持器，用于包围设置在抛光对象固定块和抛光对象之间的弹性缓冲板的给定厚度，以使抛光对象和研磨板之间的接触压力均匀，从而为了使研磨对象 抛光对象常数。

公开(公告)号：US5027327A

公开(公告)日：1991-06-25

申请号：US339661

申请日：1989-04-18

申请人： Makiji Kobayashi ,  Mitsuo Isobe ,  Tatsuya Inatsuki ,  Hisashi Ueno

发明人： Makiji Kobayashi ,  Mitsuo Isobe ,  Tatsuya Inatsuki ,  Hisashi Ueno

IPC分类号： G11C11/403 ,  G11C11/406 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： G11C11/406

摘要： A semiconductor memory having dynamic memory cells includes a determining circuit for determining whether or not it is necessary to refresh the dynamic memory cells, and only when it is necessary, outputting a refresh execution signal in response to a refresh request signal from an external circuit, and a circuit for executing a refresh operation in response to the refresh execution signal. Even if the refresh request signal is supplied, a refresh operation is not executed unless the determining circuit determines that the refresh operation is necessary, thus dispensing with unnecessary refresh operations. Preferably, the determining circuit includes a timer which outputs a signal at every predetermined period. Only when the signal is output from the timer, is the refresh request signal from an external circuit accepted and the refresh execution signal output.

公开(公告)号：US5696406A

公开(公告)日：1997-12-09

申请号：US317191

申请日：1994-10-03

申请人： Hisashi Ueno

发明人： Hisashi Ueno

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/60 ,  H01L21/768 ,  H01L21/84 ,  H01L23/52 ,  H01L27/12 ,  H01L27/06 ,  H01L27/04

CPC分类号： H01L24/05 ,  H01L21/84 ,  H01L24/03 ,  H01L27/1203 ,  H01L2224/05073 ,  H01L2224/05624 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082

摘要： A first groove for an upper interconnection and a second groove for a bonding pad are formed on a silicon dioxide film including a lower interconnection, and a through-hole is formed to connect the first groove to the lower interconnection. At the same time with the formation of the through-hole, the second groove is deepened by the common etching process. Then, an Al film is formed on the silicon dioxide film, and the Al film is polished to be removed except for the Al film in the first and second grooves to provide the upper interconnection and the bonding pad.

摘要翻译： 在包括下互连的二氧化硅膜上形成用于上互连的第一槽和用于焊盘的第二槽，并且形成将第一槽与下互连件连接的通孔。 同时形成通孔，通过普通的刻蚀工艺加深了第二槽。 然后，在二氧化硅膜上形成Al膜，除了第一和第二沟槽中的Al膜之外，抛光除去Al膜以提供上互连和接合焊盘。

公开(公告)号：US5075886A

公开(公告)日：1991-12-24

申请号：US375856

申请日：1989-07-06

申请人： Mitsuo Isobe ,  Hisashi Ueno

发明人： Mitsuo Isobe ,  Hisashi Ueno

IPC分类号： G11C7/00 ,  G11C11/403 ,  G11C11/406

CPC分类号： G11C11/40615 ,  G11C11/406

摘要： A refresh control circuit for a pseudo static random access memory includes a refresh control signal output circuit for outputting a refresh control signal to accomplish refresh control of the pseudo static random access memory, and includes a delay circuit. A first chip enable signal from a control device such as a MPU is delayed by the delay circuit and outputted as a second chip enable signal for the PSRAM. As the first chip enable signal level changes from a selection level to a non-selection level, the refresh control signal level also changes to a non-refresh level. This state is maintained for a predetermined period. After the second chip enable signal changes from the selection level to the non-selection level, the refresh control signal returns from the non-refresh level to the refresh level. Thus, the PSRAM enters into the refresh state during the non-selection state, and is refreshed. This refresh operation is necessarily performed after an access to PSRAM.

摘要翻译： 用于伪静态随机存取存储器的刷新控制电路包括刷新控制信号输出电路，用于输出刷新控制信号以完成伪静态随机存取存储器的刷新控制，并且包括延迟电路。 来自诸如MPU的控制装置的第一芯片使能信号被延迟电路延迟并作为PSRAM的第二芯片使能信号输出。 当第一芯片使能信号电平从选择电平变化到非选择电平时，刷新控制信号电平也变为非刷新电平。 该状态保持预定的时间。 在第二芯片使能信号从选择电平变化到非选择电平之后，刷新控制信号从非刷新电平返回到刷新电平。 因此，PSRAM在非选择状态期间进入刷新状态，并被刷新。 这种刷新操作必须在访问PSRAM之后执行。

公开(公告)号：US08708034B2

公开(公告)日：2014-04-29

申请号：US12509564

申请日：2009-07-27

申请人： Tadashi Saito ,  Hisashi Ueno

发明人： Tadashi Saito ,  Hisashi Ueno

IPC分类号： F28F19/02 ,  F28F19/00 ,  F28F13/00 ,  F28D1/00 ,  F28F7/00

CPC分类号： F24F1/30 ,  F24F1/36 ,  F24F1/56 ,  F24F13/222 ,  F24F13/32 ,  F28F1/32 ,  F28F1/40 ,  F28F21/084

摘要： Disclosed is an air conditioner for attempting to improve on the corrosion of the outdoor unit. The air conditioner of the present invention for performing a cooling operation and a heating operation by switching a four side valve, that includes an outdoor side heat exchanger operating as a condenser during the cooling operation and an evaporator during the heating operation, and having fins and heat transfer tubes, wherein the outdoor side heat exchanger is placed on a baseboard which configures a lower portion of a chassis of the outdoor unit, comprises the fins and the heat transfer tubes of the outdoor side heat exchanger that are constructed with aluminum or aluminum alloy, and the baseboard that is constructed with Zn—Al plated steel board or Zn—Al—Mg plated steel board.

摘要翻译： 公开了一种试图改善室外机的腐蚀的空调。 本发明的空调装置，其特征在于：在制冷运转时由冷凝器作为冷凝器的室外侧热交换器和加热运转时的蒸发器，通过切换四面阀进行制冷运转和加热运转， 传热管，其中室外侧热交换器被放置在构成室外机的底盘的下部的基板上，包括由铝或铝合金构成的散热片和室外侧热交换器的传热管 ，镀锌钢板或Zn-Al-Mg镀钢板构成的基板。

公开(公告)号：US5206830A

公开(公告)日：1993-04-27

申请号：US733126

申请日：1991-07-19

申请人： Mitsuo Isobe ,  Hisashi Ueno

发明人： Mitsuo Isobe ,  Hisashi Ueno

IPC分类号： G11C7/00 ,  G11C11/403 ,  G11C11/406

CPC分类号： G11C11/40615 ,  G11C11/406

摘要： A refresh control circuit for a pseudo static random access memory includes a refresh control signal output circuit for outputting a refresh control signal to accomplish refresh control of the pseudo static random access memory, and includes a delay circuit. A first chip enable signal from a control device such as a MPU is delayed by the delay circuit and outputted as a second chip enable signal for the PSRAM. As the first chip enable signal level changes from a selection level to a non-selection level, the refresh control signal level changes to a non-refresh level. This state is maintained for a predetermined period. After the second chip enable signal changes from the selection level to the non-selection level, the refresh control signal returns from the non-refresh level to the refresh level. Thus, the PSRAM enters into the refresh state during the non-selection state, and is refreshed. This refresh operation is necessarily performed after an access to PSRAM.

摘要翻译： 用于伪静态随机存取存储器的刷新控制电路包括刷新控制信号输出电路，用于输出刷新控制信号以完成伪静态随机存取存储器的刷新控制，并且包括延迟电路。 来自诸如MPU的控制装置的第一芯片使能信号被延迟电路延迟并作为PSRAM的第二芯片使能信号输出。 当第一芯片使能信号电平从选择电平变化到非选择电平时，刷新控制信号电平变为非刷新电平。 该状态保持预定的时间。 在第二芯片使能信号从选择电平变化到非选择电平之后，刷新控制信号从非刷新电平返回到刷新电平。 因此，PSRAM在非选择状态期间进入刷新状态，并被刷新。 这种刷新操作必须在访问PSRAM之后执行。

公开(公告)号：US4939695A

公开(公告)日：1990-07-03

申请号：US268927

申请日：1988-11-09

申请人： Mitsuo Isobe ,  Takayasu Sakurai ,  Kazuhiro Sawada ,  Kazutaka Nogami ,  Hisashi Ueno

发明人： Mitsuo Isobe ,  Takayasu Sakurai ,  Kazuhiro Sawada ,  Kazutaka Nogami ,  Hisashi Ueno

IPC分类号： G11C11/403 ,  G11C11/406

CPC分类号： G11C11/406

摘要： A virtual type static semiconductor memory device according to the present invention comprises a refresh detector circuit for detecting the enabling operation of a refresh control circuit and a terminal for outputting to an outside a detection signal which is generated from the refresh detector circuit. The virtual type static semiconductor memory device informs a present refresh operation to the outside when it is accessed from the outside during the time period in which a refresh operation is conducted in the semiconductor memory device. A system employing the semiconductor memory device allows a slow access at that time only and allows access to be gained to the semiconductor memory device at high speed at other times.