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1.发明授权Semiconductor device having reflecting layers made of varying unit semiconductors 失效具有由不同单位半导体制成的反射层的半导体器件
公开(公告)号：US5260589A
公开(公告)日：1993-11-09
申请号：US786006
申请日：1991-10-31
CPC分类号： H01L33/10
摘要： A semiconductor device having a reflecting layer consisting of unit semiconductors each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.
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公开(公告)号：US5132750A
公开(公告)日：1992-07-21
申请号：US616092
申请日：1990-11-20
申请人： Toshihiro Kato , Hiromoto Susawa , Takashi Saka
发明人： Toshihiro Kato , Hiromoto Susawa , Takashi Saka
摘要： A light-emitting diode having a light-generating layer for generating an electromagnetic radiation by electroluminescence, a light-emitting surface through which the radiation is emitted, and a light-reflecting layer remote from the light-emitting surface, for reflecting a portion of the radiation toward the light-generating layer so that the radiation reflected by the light-reflecting layer is also emitted through the light-emitting surface. The light-reflecting layer consists of two or more interference type reflecting layers which include one or more reflecting layers each capable of most efficiently reflecting a wave whose wavelength is longer than the nominal wavelength of the radiation. The light-emitting surface may have irregularity for irregularly reflecting the radiation, or an anti-reflection layer formed thereon by deposition.
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3.发明授权Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效发射高自旋极化电子束的工艺及其半导体器件
公开(公告)号：US5523572A
公开(公告)日：1996-06-04
申请号：US410760
申请日：1995-03-27
CPC分类号： H01J1/34 , H01J3/021 , H01J2201/3423 , H01J2203/0296
摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.
摘要翻译： 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。
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4.发明授权
公开(公告)号：US5834791A
公开(公告)日：1998-11-10
申请号：US960592
申请日：1997-10-30
CPC分类号： H01J1/34 , H01J3/021 , H01J2201/3423 , H01J2203/0296
摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.
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公开(公告)号：US5315127A
公开(公告)日：1994-05-24
申请号：US876579
申请日：1992-04-30
IPC分类号： H01J1/34 , H01J3/02 , H01L29/161
CPC分类号： H01J1/34 , H01J3/021 , H01J2201/3423 , H01J2203/0296
摘要： A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.
摘要翻译： 一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高自旋极化电子束的半导体器件; 在第一化合物半导体层上与砷化镓GaAs形成的第二化合物半导体层，具有与第一晶格常数不同的第二晶格常数，第二化合物半导体层在接受光能时发射高度自旋极化的电子束 ; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t限定第一和第二晶格常数之间的失配量，使得失配的大小提供残余应变， εR在第二层中不小于2.0×10 -3。 砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了在重孔带 以及第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。
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公开(公告)号：US08344354B2
公开(公告)日：2013-01-01
申请号：US12736270
申请日：2009-03-24
申请人： Toru Ujihara , Xiuguang Jin , Yoshikazu Takeda , Tsutomu Nakanishi , Naoto Yamamoto , Takashi Saka , Toshihiro Kato
发明人： Toru Ujihara , Xiuguang Jin , Yoshikazu Takeda , Tsutomu Nakanishi , Naoto Yamamoto , Takashi Saka , Toshihiro Kato
IPC分类号： H01L31/0304
CPC分类号： G21K1/16 , H01J1/34 , H01J3/021 , H01J37/06 , H01J2201/3423 , H01J2203/0296 , H01J2237/06333 , H01J2237/06383 , H01J2237/24557 , H01J2237/26
摘要： A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.
摘要翻译： 自旋极化电子产生装置包括衬底，缓冲层，形成在缓冲层上的应变超晶格层，以及由晶格常数大于缓冲层晶体的晶格常数的晶体形成的中间层， 介于衬底和缓冲层之间的中间层。 缓冲层包括通过拉伸应变在垂直于基板的方向上形成的裂纹。
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公开(公告)号：US20110089397A1
公开(公告)日：2011-04-21
申请号：US12736270
申请日：2009-03-24
申请人： Toru Ujihara , Xiuguang Jin , Yoshikazu Takeda , Tsutomu Nakanishi , Naoto Yamamoto , Takashi Saka , Toshihiro Kato
发明人： Toru Ujihara , Xiuguang Jin , Yoshikazu Takeda , Tsutomu Nakanishi , Naoto Yamamoto , Takashi Saka , Toshihiro Kato
IPC分类号： H01L29/12
CPC分类号： G21K1/16 , H01J1/34 , H01J3/021 , H01J37/06 , H01J2201/3423 , H01J2203/0296 , H01J2237/06333 , H01J2237/06383 , H01J2237/24557 , H01J2237/26
摘要： To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.
摘要翻译： 为了提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。
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8.发明授权
公开(公告)号：US5723871A
公开(公告)日：1998-03-03
申请号：US214319
申请日：1994-03-17
IPC分类号： H01J1/34 , H01J3/02 , H01L29/201 , H01L29/161
CPC分类号： H01J1/34 , H01J3/021 , H01J2201/3423 , H01J2203/0296
摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.
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公开(公告)号：US20130170621A1
公开(公告)日：2013-07-04
申请号：US13820502
申请日：2011-09-02
CPC分类号： H02H7/1213 , H02H7/1255 , H02M1/32 , H02M3/335 , H02M3/33523 , H05G1/12
摘要： The present invention includes: a transformer having a primary winding, a secondary winding and a tertiary winding; a primary-side rectifying and smoothing circuit, which converts alternating-current power to direct-current power and smoothes the power; a secondary-side rectifying and smoothing circuit, which smoothes secondary-side power; a tertiary-side rectifying and smoothing circuit, which smoothes power of the tertiary winding; a switching circuit, which opens and closes the primary winding; a pulse width control circuit, which controls the pulse width of drive signals that control the opening and closing of the switching circuit; and a secondary-side electrolytic capacitor deterioration detecting circuit, which detects deterioration of the secondary-side electrolytic capacitor. The secondary-side electrolytic capacitor deterioration detecting circuit detects deterioration of the secondary-side electrolytic capacitor by inputting the output voltage of the tertiary-side rectifying and smoothing circuit, and stops operation of a switching power supply circuit.
摘要翻译： 本发明包括：具有初级绕组，次级绕组和三次绕组的变压器; 初级侧整流平滑电路，其将交流电力转换为直流电力并使功率平滑化; 二次侧整流平滑电路，其平滑次级侧功率; 三级侧整流平滑电路，使三次绕组的功率平滑; 开关电路，其开闭初级绕组; 脉冲宽度控制电路，其控制控制开关电路的断开和闭合的驱动信号的脉冲宽度; 以及次级侧电解电容器劣化检测电路，其检测二次侧电解电容器的劣化。 次级侧电解电容器劣化检测电路通过输入三次侧整流平滑电路的输出电压来检测二次侧电解电容器的劣化，停止开关电源电路的动作。
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公开(公告)号：US20140240873A1
公开(公告)日：2014-08-28
申请号：US14348981
申请日：2012-08-28
申请人： Takashi Saka
发明人： Takashi Saka
IPC分类号： H02H7/125
CPC分类号： H02H7/1255 , H02H7/1213 , H02M1/32 , H02M3/33523
摘要： A switching power supply circuit includes a transformer having primary, secondary and tertiary windings; a primary-side rectifying-and-smoothing circuit that converts AC power to DC power then smoothes it; a secondary-side rectifying-and-smoothing circuit that smoothes secondary-side power; a tertiary-side rectifying-and-smoothing circuit that smoothes power from the tertiary winding; a switching circuit that switches the primary winding; a pulse width control circuit that controls the switching of the switching circuit; an output-error detecting circuit that detects a deviation of a secondary-side DC output voltage from a reference voltage; and a ripple-voltage detecting-and-controlling circuit that detects a ripple-voltage of the secondary-side DC output voltage and stop-controls the output-error detecting circuit, wherein a stop-control signal from the ripple-voltage detecting-and-controlling circuit causes the output-error detecting circuit to stop outputting, then a drive signal to the switching circuit is stopped, thus the operation of the switching power supply circuit is stopped.
摘要翻译： 开关电源电路包括具有初级，次级和三级绕组的变压器; 将AC电力转换为DC电力的初级侧整流平滑电路，然后使其平滑化; 次级侧整流平滑电路，其平滑二次侧功率; 三次侧整流平滑电路，其使来自三次绕组的功率平滑化; 切换初级绕组的开关电路; 脉冲宽度控制电路，其控制所述开关电路的切换; 输出误差检测电路，检测次级侧直流输出电压与基准电压的偏差; 以及纹波电压检测和控制电路，其检测次级侧DC输出电压的纹波电压并停止控制输出错误检测电路，其中来自纹波电压检测的停止控制信号和 控制电路使输出错误检测电路停止输出，然后停止对开关电路的驱动信号，停止开关电源电路的动作。
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