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    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    1.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效
    发射高自旋极化电子束的工艺及其半导体器件

    公开(公告)号：US5523572A

    公开(公告)日：1996-06-04

    申请号：US410760

    申请日：1995-03-27

    申请人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    发明人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC分类号： H01J1/34 ,  H01J3/02 ,  H01J37/00

    CPC分类号： H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    摘要翻译： 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    2.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效

    公开(公告)号：US5834791A

    公开(公告)日：1998-11-10

    申请号：US960592

    申请日：1997-10-30

    申请人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    发明人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC分类号： H01J1/34 ,  H01J3/02 ,  H01L29/20

    CPC分类号： H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    3.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效

    公开(公告)号：US5723871A

    公开(公告)日：1998-03-03

    申请号：US214319

    申请日：1994-03-17

    申请人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    发明人： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC分类号： H01J1/34 ,  H01J3/02 ,  H01L29/201 ,  H01L29/161

    CPC分类号： H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    摘要： A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    SPIN-POLARIZED ELECTRON SOURCE
    5.
    发明申请
    SPIN-POLARIZED ELECTRON SOURCE 有权
    旋转极化电子源

    公开(公告)号：US20110089397A1

    公开(公告)日：2011-04-21

    申请号：US12736270

    申请日：2009-03-24

    申请人： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

    发明人： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

    IPC分类号： H01L29/12

    CPC分类号： G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

    摘要： To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.

    摘要翻译： 为了提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。

    Electron microscope
    6.
    发明授权
    Electron microscope 有权
    电子显微镜

    公开(公告)号：US08841615B2

    公开(公告)日：2014-09-23

    申请号：US13637227

    申请日：2011-02-22

    申请人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    发明人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

    IPC分类号： H01J37/26 ,  H01J37/073

    CPC分类号： H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

    摘要： An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

    摘要翻译： 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

    Displaying device and lighting device employing organic electroluminescence element
    7.
    发明授权
    Displaying device and lighting device employing organic electroluminescence element 有权
    使用有机电致发光元件的显示装置和照明装置

    公开(公告)号：US07928353B2

    公开(公告)日：2011-04-19

    申请号：US12392691

    申请日：2009-02-25

    申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

    发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

    IPC分类号： H01J1/46

    CPC分类号： H01L51/5203 ,  H01L51/5234 ,  H01L2251/5315

    摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

    摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

    Organic EL display
    8.
    发明授权
    Organic EL display 失效
    有机EL显示屏

    公开(公告)号：US07759861B2

    公开(公告)日：2010-07-20

    申请号：US11234189

    申请日：2005-09-26

    申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

    发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01L51/5262 ,  H01L27/3211

    摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional concavo-convex structure having two pattern periods.

    摘要翻译： 在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个图案周期的二维凹凸结构。

    Resistor
    9.
    发明授权
    Resistor 失效
    电阻

    公开(公告)号：US06859133B2

    公开(公告)日：2005-02-22

    申请号：US10258905

    申请日：2002-02-28

    申请人： Tsutomu Nakanishi ,  Takashi Morino ,  Tadao Yagi ,  Tetsuhiro Korechika

    发明人： Tsutomu Nakanishi ,  Takashi Morino ,  Tadao Yagi ,  Tetsuhiro Korechika

    IPC分类号： H01C1/14 ,  H01C1/148 ,  H01C7/00 ,  H01C1/012

    CPC分类号： H01C7/003 ,  H01C1/148

    摘要： The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.

    摘要翻译： 本发明的电阻器包括衬底，设置在衬底的一个表面上的一对上电极层和连接到一对上电极层的电阻层，其中上电极层包括强烈的第一薄膜层 粘附到基板和电阻层，以及具有低于第一上电极薄膜层的体积电阻率的体积电阻率的第二薄膜层。 此外，本发明的电阻器包括在基板的端部处电连接到上电极层的一对侧电极，并且侧电极包括第一侧薄膜层和第二侧薄膜层， 并且形成第二侧薄膜层的材料与第一侧薄膜层具有固体溶解性。