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公开(公告)号：US06311506B1
公开(公告)日：2001-11-06
申请号：US09348459
申请日：1999-07-07
IPC分类号： F25B4106
CPC分类号： F25B41/04 , F25B2700/197 , F25B2700/21171
摘要： A control unit is disclosed for controlling a refrigerating machine in such a way that a refrigerating power exceeding the required performance is secured while the control unit has a function of bypassing hot gas by means of a hot gas bypass line. A temperature-responsive valve is mounted in the hot gas bypass line in addition to a pressure regulating valve. If a preset temperature Tr of a brine becomes equal to or higher than a given temperature (0° C.), the temperature-responsive valve opens the bypass line. If the preset temperature Tr becomes lower than the given temperature, the temperature-responsive valve closes the bypass line.
摘要翻译： 公开了一种用于控制冷冻机的控制单元，使得在控制单元具有通过热气旁通管旁路热气的功能的同时确保超过所需性能的制冷功率。 温度响应阀除了压力调节阀之外还安装在热气旁通管路中。 如果盐水的预设温度Tr等于或高于给定温度（0°C），则温度响应阀打开旁路管路。 如果预设温度Tr低于给定温度，则温度响应阀关闭旁路管路。
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公开(公告)号：US6148909A
公开(公告)日：2000-11-21
申请号：US236371
申请日：1999-01-25
申请人： Masashi Osanai , Shunsuke Miyamoto , Tomohisa Sato , Hiroaki Takechi , Tsutomu Hatanaka , Norio Takahashi , Toshiyuki Kamei , Takumi Sugihara , Isao Shibata , Hironori Akiba
发明人： Masashi Osanai , Shunsuke Miyamoto , Tomohisa Sato , Hiroaki Takechi , Tsutomu Hatanaka , Norio Takahashi , Toshiyuki Kamei , Takumi Sugihara , Isao Shibata , Hironori Akiba
CPC分类号： G05D23/1919
摘要： A temperature control system which performs control of an object whose temperature is to be controlled as accurately as possible. The system comprises: a chiller located in a fluid circulating and supplying system, for cooling a thermal fluid returning from a vacuum chamber, a first flow control valve located in the fluid circulating and supplying system in a position between the chiller and the vacuum chamber, a bypass passage for splitting and supplying thermal fluid returning from the vacuum chamber to a position between the first flow control valve and the vacuum chamber, before it reaches the chiller, a second flow control valve located in the bypass passage, and a halogen lamp heater located in the fluid circulating and supplying system in a position between a confluence point of the bypass passage and the vacuum chamber, for adjusting the temperature of the thermal fluid passing therethrough to a set temperature.
摘要翻译： 一种温度控制系统，其对要温度控制的物体尽可能准确地进行控制。 该系统包括：位于流体循环供应系统中的冷却器，用于冷却从真空室返回的热流体;位于冷却器和真空室之间位置的流体循环供应系统中的第一流量控制阀， 旁通通道，用于将从真空室返回的热流体分流并供应到第一流量控制阀和真空室之间的位置，到达冷却器之前，位于旁路通道中的第二流量控制阀和卤素灯加热器 位于流体循环和供给系统中的位于旁路通道的汇合点和真空室之间的位置，用于将通过其的热流体的温度调节到设定温度。
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公开(公告)号：US20090031954A1
公开(公告)日：2009-02-05
申请号：US12278650
申请日：2007-02-08
申请人： Kouichi Nishikido , Motonori Nakamura , Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei
发明人： Kouichi Nishikido , Motonori Nakamura , Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , C23C16/4581 , C23C16/4585 , C30B25/12 , H01L21/68735
摘要： A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion. The chemical vapor deposition control unit is made of SiO2 which is less reactive with a reaction gas than a SiC film.
摘要翻译： 提供一种能够减小衬底晶片的外表面上的外延膜的膜厚度和外延晶片的制造装置的基座。 感受体包括晶片放置和周边部分。 晶片放置的尺寸大于衬底晶片W并且基本上是圆盘形。 周边部分基本上是环形的，并且包括：以围绕晶片放置的周边部分的方式站立的内圆周; 以及从内圆周的上端平行于晶片放置的放置表面向外延伸的上表面。 在化学气相沉积控制单元中，内圆周具有与周边部分的内周的曲率大致相似的曲率，并且上表面与上表面平齐）。 化学气相沉积控制单元由与SiC膜反应气反应性较低的SiO 2制成。
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公开(公告)号：US20070281084A1
公开(公告)日：2007-12-06
申请号：US11806091
申请日：2007-05-30
申请人： Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei , Kouichi Nishikido , Motonori Nakamura
发明人： Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei , Kouichi Nishikido , Motonori Nakamura
CPC分类号： C23C16/45565 , C23C16/52
摘要： A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.
摘要翻译： 反应气体从多个气体流路36A供给到反应室20A的气体导入口40B。气体流路36A的数量在气体入口的一侧的范围内为5以上 端口40B在其中心分为两个。 相邻气体流路36A之间的间距为10mm以上。 具有多个狭缝孔38A的挡板38设置在气体流路36A的上游。各气体流路36A的气体流量通过使用层生长敏感性数据的复数计算进行调整，该层生长敏感性数据定义了 各气体流路36A的气体流量。
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公开(公告)号：US20090156101A1
公开(公告)日：2009-06-18
申请号：US12371320
申请日：2009-02-13
CPC分类号： B24B37/30
摘要： A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.
摘要翻译： 抛光装置包括抛光板（24），附着在抛光板（24）的表面上的研磨布（25），用于将晶片（39）的一个表面保持并压靠在研磨布上的卡盘（19） （25）和同心地布置在卡盘（19）的周边上的圆形保持环（23）。 保持环（23）可相对于卡盘（19）旋转并且可垂直移动，并且在研磨步骤期间被压靠在研磨布（25）上。 在最后的抛光步骤期间，保持环（23）被向上提升，从而防止研磨颗粒进入最终抛光阶段。 因此，可以使用相同的抛光头连续进行研磨和最终抛光。 利用这种结构，可以实现装置的成本削减，因为使用相同的抛光头连续进行研磨和最终抛光，而不将用于研磨的研磨颗粒带入最后的抛光阶段。
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公开(公告)号：US07507148B2
公开(公告)日：2009-03-24
申请号：US10528287
申请日：2003-09-26
IPC分类号： B24B5/00
CPC分类号： B24B37/30
摘要： A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.
摘要翻译： 抛光装置包括抛光板（24），附着在抛光板（24）的表面上的研磨布（25），用于将晶片（39）的一个表面保持并压靠在研磨布上的卡盘（19） （25）和同心地布置在卡盘（19）的周边上的圆形保持环（23）。 保持环（23）可相对于卡盘（19）旋转并且可垂直移动，并且在研磨步骤期间被压靠在研磨布（25）上。 在最后的抛光步骤期间，保持环（23）被向上提升，从而防止研磨颗粒进入最终抛光阶段。 因此，可以使用相同的抛光头连续进行研磨和最终抛光。 利用这种结构，可以实现装置的成本削减，因为使用相同的抛光头连续进行研磨和最终抛光，而不将用于研磨的研磨颗粒带入最后的抛光阶段。
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7.发明申请3-(4-AMINOPHENYL)-2-FURANCARBOXYLIC ACID DERIVATIVE AND PHARMACEUTICALLY ACCEPTABLE SALT THEREOF 有权3-（4-氨基戊基）-2-呋喃羧酸衍生物及其药物可接受的盐公开(公告)号：US20120059012A1
公开(公告)日：2012-03-08
申请号：US13320204
申请日：2010-05-12
申请人： Akihito Fujii , Kazumi Niidome , Chiaki Migihashi , Toshiyuki Kamei , Takafumi Matsumoto , Tomoyuki Hirata
发明人： Akihito Fujii , Kazumi Niidome , Chiaki Migihashi , Toshiyuki Kamei , Takafumi Matsumoto , Tomoyuki Hirata
IPC分类号： A61K31/341 , C07D407/12 , A61K31/357 , A61K31/343 , C07D417/12 , A61K31/427 , C07D409/12 , A61K31/381 , A61P3/10 , A61P3/08 , A61P5/48 , A61P3/06 , A61P7/00 , A61P9/10 , A61P1/18 , A61P9/00 , A61P9/12 , A61P1/00 , A61P3/04 , A61P3/00 , A61K31/4985 , A61K31/4439 , C07D307/68
CPC分类号： C07D307/68 , A61K31/34 , A61K31/341 , A61K31/343 , A61K31/357 , A61K31/381 , A61K31/427 , C07D307/46 , C07D307/79 , C07D333/58 , C07D407/12 , C07D409/12 , C07D417/12
摘要： Disclosed is a compound represented by Formula (I) or a pharmaceutically acceptable salt thereof: wherein R1 is 1: a C3-8 cycloalkyl C1-4 alkyl group, 2: a C7-14 aralkyl group, in which the aryl moiety thereof is optionally substituted with the same or different 1 to 3 groups selected from the group consisting of: (a) halogen, (b) C1-4 alkyl, which is optionally substituted with 1 to 3 fluorine atoms, (c) C1-4 alkoxy, which is optionally substituted with 1 to 3 fluorine atoms, and (d) C1-4 alkylcarbonyl, which is optionally substituted with C1-4 alkoxy, 3: a five- to ten-membered heteroaryl-C1-4 alkyl group, in which the heteroaryl moiety thereof is optionally substituted with the same or different 1 to 3 groups selected from the group consisting of: (a) halogen, and (b) C1-4 alkyl, or 4: a C6-10 aryl C2-6 alkenyl group; and R2 is a cyano group or a nitro group.
摘要翻译： 公开了由式（I）表示的化合物或其药学上可接受的盐：其中R 1为1：C 3-8环烷基C 1-4烷基，2为C 7-14芳烷基，其中芳基部分为任选的 用相同或不同的1至3个选自以下的基团取代：（a）卤素，（b）任选被1至3个氟原子取代的C 1-4烷基，（c）C 1-4烷氧基，其中 任选被1至3个氟原子取代，和（d）任选被C 1-4烷氧基取代的C 1-4烷基羰基，3：五至十元杂芳基-C 1-4烷基，其中杂芳基 其部分任选被相同或不同的1至3个选自以下的基团取代：（a）卤素和（b）C 1-4烷基或4：C 6-10芳基C 2-6烯基; R2为氰基或硝基。
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公开(公告)号：US20120011833A1
公开(公告)日：2012-01-19
申请号：US13259298
申请日：2010-03-23
申请人： Toshiyuki Kamei , Hiroshi Yamamoto
发明人： Toshiyuki Kamei , Hiroshi Yamamoto
IPC分类号： F01N3/035
CPC分类号： E02F9/0866 , F01N13/0097 , F01N13/1805 , F01N13/1855 , F01N2450/30 , F01N2470/18
摘要： An exhaust gas purifying device for an internal combustion engine includes an inflow case provided with an inlet pipe, a catalyst case in which an oxidizing catalyst for dosing is housed, a filter case in which a soot filter is housed, and an outflow case provided with an outlet pipe, and is attached to an attached target at two attachment points mutually spaced in the axial direction of the cases. At one of the two attachment points, which is defined on the catalyst case, the catalyst case is firmly fixed. At the other attachment point, which is defined on the filter case, the filter case is attached slidably in the axial direction.
摘要翻译： 一种用于内燃机的排气净化装置，具备：流入壳体，设有入口管，容纳有配量的氧化催化剂的催化剂壳体，容纳有烟灰过滤器的过滤器壳体， 出口管，并且在沿壳体的轴向相互间隔开的两个附接点处附接到附接的目标。 在催化剂壳体上限定的两个连接点中的一个上，催化剂壳体牢固地固定。 在过滤器壳体上限定的另一附着点处，过滤器壳体沿轴向可滑动地附接。
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公开(公告)号：US07654883B2
公开(公告)日：2010-02-02
申请号：US12371320
申请日：2009-02-13
IPC分类号： B24B1/00
CPC分类号： B24B37/30
摘要： A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.
摘要翻译： 抛光装置包括抛光板（24），附着在抛光板（24）的表面上的研磨布（25），用于将晶片（39）的一个表面保持并压靠在研磨布上的卡盘（19） （25）和同心地布置在卡盘（19）的周边上的圆形保持环（23）。 保持环（23）可相对于卡盘（19）旋转并且可垂直移动，并且在研磨步骤期间被压靠在研磨布（25）上。 在最后的抛光步骤期间，保持环（23）被向上提升，从而防止研磨颗粒进入最终抛光阶段。 因此，可以使用相同的抛光头连续进行研磨和最终抛光。 利用这种结构，可以实现装置的成本削减，因为使用相同的抛光头连续进行研磨和最终抛光，而不将用于研磨的研磨颗粒带入最后的抛光阶段。
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公开(公告)号：US20060057942A1
公开(公告)日：2006-03-16
申请号：US10528287
申请日：2003-09-26
IPC分类号： B24B1/00
CPC分类号： B24B37/30
摘要： A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.
摘要翻译： 抛光装置包括抛光板（24），附着在抛光板（24）的表面上的研磨布（25），用于将晶片（39）的一个表面保持并压靠在研磨布上的卡盘（19） （25）和同心地布置在卡盘（19）的周边上的圆形保持环（23）。 保持环（23）可相对于卡盘（19）旋转并且可垂直移动，并且在研磨步骤期间被压靠在研磨布（25）上。 在最后的抛光步骤期间，保持环（23）被向上提升，从而防止研磨颗粒进入最终抛光阶段。 因此，可以使用相同的抛光头连续进行研磨和最终抛光。 利用这种结构，可以实现装置的成本削减，因为使用相同的抛光头连续进行研磨和最终抛光，而不将用于研磨的研磨颗粒带入最后的抛光阶段。
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