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    Image sensor with shifted color filter array pattern and bit line pairs
    1.
    发明授权
    Image sensor with shifted color filter array pattern and bit line pairs 有权

    公开(公告)号：US11284045B2

    公开(公告)日：2022-03-22

    申请号：US16855857

    申请日：2020-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

    IPC: H04N5/374 ,  H04N9/04 ,  H04N5/369 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146

    Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS
    2.
    发明申请
    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS 有权

    公开(公告)号：US20210337169A1

    公开(公告)日：2021-10-28

    申请号：US16855857

    申请日：2020-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

    IPC: H04N9/04 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/378

    Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS
    4.
    发明申请
    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS 有权

    公开(公告)号：US20220159222A1

    公开(公告)日：2022-05-19

    申请号：US17649890

    申请日：2022-02-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

    IPC: H04N9/04 ,  H04N5/369 ,  H04N5/378 ,  H04N5/3745

    Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

    GLOBAL SHUTTER CORRECTION
    6.
    发明申请
    GLOBAL SHUTTER CORRECTION 有权

    公开(公告)号：US20170163912A1

    公开(公告)日：2017-06-08

    申请号：US14958080

    申请日：2015-12-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Zhiyong Zhan ,  Qingfei Chen ,  Chin-Chang Pai

    IPC: H04N5/357 ,  H04N5/369

    CPC classification number: H04N5/357 ,  H04N5/3745

    Abstract: A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.

    IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE
    7.
    发明申请
    IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE 有权
    具有用于减少图像噪声的多光子半导体区域的图像传感器

    公开(公告)号：US20150108507A1

    公开(公告)日：2015-04-23

    申请号：US14056132

    申请日：2013-10-17

    Applicant: OmniVision Technologies, Inc.

    Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

    IPC: H01L27/146 ,  H01L31/12

    CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

    Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

    Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。

    Image sensor with analog binned readout of image sensing photodiodes with phase detection photodiodes
    8.
    发明授权
    Image sensor with analog binned readout of image sensing photodiodes with phase detection photodiodes 有权

    公开(公告)号：US11356630B2

    公开(公告)日：2022-06-07

    申请号：US16855854

    申请日：2020-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Chin Poh Pang ,  Qingwei Shan

    IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146

    Abstract: An imaging device includes a first pixel circuit having a first plurality of photodiodes that includes a phase detection autofocus photodiode with image sensing photodiodes. A first buffer transistor having a first threshold voltage is coupled to the first plurality of photodiodes to generate a first output signal. A second pixel circuit is included having a second plurality of photodiodes that are all image sensing photodiodes. A second buffer transistor having a second threshold voltage is coupled to the second plurality of photodiodes to generate a second output signal. The first threshold voltage is less than the second threshold voltage. A driver is coupled to receive a combination of the first and second output signals to generate a total output signal. An influence of the first output signal dominates the second output signal in the total output signal because the first threshold voltage is less than the second threshold voltage.

    Image sensor color correction
    9.
    发明授权
    Image sensor color correction 有权

    公开(公告)号：US10103187B2

    公开(公告)日：2018-10-16

    申请号：US14973017

    申请日：2015-12-17

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Qingwei Shan ,  Chin-Chang Pai

    IPC: H04N5/369 ,  H04N5/363 ,  H04N5/3745 ,  H01L27/146

    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

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