公开(公告)号：US10573790B2

公开(公告)日：2020-02-25

申请号：US15543881

申请日：2016-01-26

Applicant: OSRAM OLED GmbH

Inventor： Wolfgang Mönch ,  Britta Göötz ,  Frank Singer ,  Martin Straßburg ,  Tilman Schimpke

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  G02F1/1335 ,  H01L33/46 ,  H01L51/52 ,  H01L33/56 ,  H01L33/58

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

公开(公告)号：US11804568B2

公开(公告)日：2023-10-31

申请号：US16980859

申请日：2019-04-26

Applicant: Osram OLED GmbH

Inventor： Rainer Hartmann ,  Clemens Vierheilig ,  Tobias Meyer ,  Andreas Rueckerl ,  Tilman Schimpke ,  Michael Binder

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L25/075 ,  H01L33/12 ,  H01L33/62

CPC classification number: H01L33/0093 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/62

Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.