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    SINGLE PHOTON SOURCE AND METHOD OF CONTROLLED GENERATION OF PHOTONS
    1.
    发明申请
    SINGLE PHOTON SOURCE AND METHOD OF CONTROLLED GENERATION OF PHOTONS 审中-公开

    公开(公告)号：US20190341522A1

    公开(公告)日：2019-11-07

    申请号：US16347891

    申请日：2018-01-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke

    IPC: H01L33/06 ,  H01L27/20 ,  H01L33/32

    Abstract: A single photon source includes a semiconductor body and a transducer, wherein the transducer during operation of a single photon source can be coupled into an active zone, disposed between a first and second semiconductor layer of the semiconductor body, the active zone and the transducer are arranged at a same vertical height to a carrier of the single photon source and piezoelectric intermediate layer material so that the intermediate layer is a propagation medium for surface waves generated or excited by the transducer, the intermediate layer is arranged in places between the first semiconductor layer and the active zone and adjoins the active zone, and an electrical insulation between the intermediate layer and the transducer is achieved by the intermediate layer being undoped at least in overlapping regions with the transducer or by an insulating layer being arranged between the transducer and the intermediate layer.

    Method and Device for Measurement of a Plurality of Semiconductor Chips in a Wafer Array
    2.
    发明申请
    Method and Device for Measurement of a Plurality of Semiconductor Chips in a Wafer Array 审中-公开

    公开(公告)号：US20190189527A1

    公开(公告)日：2019-06-20

    申请号：US16323237

    申请日：2017-07-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Holger Specht ,  Roland Zeisel ,  Anton Vogl ,  Jens Ebbecke

    IPC: H01L21/66 ,  G01R31/265 ,  G01R31/26

    CPC classification number: H01L22/12 ,  G01R31/2601 ,  G01R31/2656 ,  G01R31/311

    Abstract: A method and a device for measuring a plurality of semiconductor chips in a wafer array are disclosed. In an embodiment a method for measuring the semiconductor chips in a wafer array, wherein the wafer array is arranged on an electrically conductive carrier so that in each case back contacts of the semiconductor chips are contacted by the carrier, wherein a contact structure is arranged on a side of the wafer array facing away from the carrier, and wherein the contact structure includes a contact element and/or a plurality of radiation-emitting measurement semiconductor chips, includes applying a voltage between the contact structure and the carrier and measuring the semiconductor chips depending on a luminous image which is generated by emitted radiation which is caused simultaneously by fluorescence when the semiconductor chips are illuminated or by a radiation-emitting operation of the measurement semiconductor chips when the voltage is applied.

    Single photon source and method of controlled generation of photons
    6.
    发明授权
    Single photon source and method of controlled generation of photons 有权

    公开(公告)号：US10586889B2

    公开(公告)日：2020-03-10

    申请号：US16347891

    申请日：2018-01-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke

    IPC: H01L33/06 ,  H01L27/20 ,  H01L33/32

    Abstract: A single photon source includes a semiconductor body and a transducer, wherein the transducer during operation of a single photon source can be coupled into an active zone, disposed between a first and second semiconductor layer of the semiconductor body, the active zone and the transducer are arranged at a same vertical height to a carrier of the single photon source and piezoelectric intermediate layer material so that the intermediate layer is a propagation medium for surface waves generated or excited by the transducer, the intermediate layer is arranged in places between the first semiconductor layer and the active zone and adjoins the active zone, and an electrical insulation between the intermediate layer and the transducer is achieved by the intermediate layer being undoped at least in overlapping regions with the transducer or by an insulating layer being arranged between the transducer and the intermediate layer.

    SEMICONDUCTOR LAYER SEQUENCE AND METHOD OF PRODUCING THE SAME
    8.
    发明申请
    SEMICONDUCTOR LAYER SEQUENCE AND METHOD OF PRODUCING THE SAME 有权
    半导体层序列及其生产方法

    公开(公告)号：US20160276531A1

    公开(公告)日：2016-09-22

    申请号：US15034565

    申请日：2014-11-04

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Jens Ebbecke ,  Claudia Kauss ,  Petrus Sundgren

    IPC: H01L33/08 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/02

    CPC classification number: H01L33/08 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/30

    Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.

    Abstract translation: 半导体层序列包括n导电n型侧，p导电p型侧和两侧之间的有源区，有源区同时产生具有第一波长的第一辐射和具有第二波长的第二辐射 所述有源区包括至少一个具有产生所述第一辐射的第一材料组成的辐射活性层，所述至少一个辐射活性层垂直于所述半导体层序列的生长方向定向，所述活性区包括 多个具有第二材料组合物和/或具有产生第二辐射的晶体结构的辐射活性管，该晶体结构偏离至少一个辐射活性层，并且辐射活性管平行于生长定向 方向，辐射活性管的平均直径为5nm至100nm，辐射活性管的平均表面密度为10 8 1 / cm 2至10 11 1 / cm 2。

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