公开(公告)号：US09595606B2

公开(公告)日：2017-03-14

申请号：US14790064

申请日：2015-07-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kenichiro Tanaka ,  Shinichi Kohda ,  Masahiro Ishida ,  Tetsuzo Ueda

IPC: H01L29/778 ,  H01L29/36 ,  H01L29/207 ,  H01L29/06 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7786

Abstract: A field-effect transistor includes a codoped layer made of AlxGa1-xN (0≦x≦1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×1017/cm3. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×1017/cm3. The thickness of the GaN layer is equal to or greater than 0.75 μm.

Abstract translation: 场效应晶体管包括由Al x Ga 1-x N（0≤x≤1）构成并形成在p型Si衬底上的共掺层，在共掺层上形成的GaN层和形成在GaN层上的AlGaN层。 共掺层含有C和Si作为杂质元素。 共掺层中的C的杂质浓度等于或高于5×1017 / cm3。 共掺层中Si的杂质浓度低于C的杂质浓度.Ca层中的C的杂质浓度等于或低于1×1017 / cm3。 GaN层的厚度等于或大于0.75μm。

公开(公告)号：US10050138B2

公开(公告)日：2018-08-14

申请号：US15216691

申请日：2016-07-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke Shibata ,  Kenichiro Tanaka ,  Masahiro Ishida ,  Shinichi Kohda

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/20 ,  H01L29/861 ,  H01L29/872 ,  H01L29/205 ,  H01L29/04 ,  H01L29/423 ,  H01L29/10

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

公开(公告)号：US10439514B2

公开(公告)日：2019-10-08

申请号：US16082214

申请日：2017-02-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoh Takano ,  Shinichi Kohda

IPC: H02M1/092 ,  H02M7/537 ,  H02M1/08 ,  H03K17/687 ,  H03K17/16 ,  H02M7/5387 ,  H02M1/00

Abstract: A light-receiving circuit receives light emitted by a light-emitting part and generates an energization signal that is an electric current based on intensity of the light. A hold circuit is configured to supply an electric charge of an energization signal to a high electric potential terminal and not to decrease a voltage of the high electric potential terminal in a case where a control circuit is sending an OFF signal. Furthermore, the hold circuit is configured not to supply the electric charge of the energization signal to the high electric potential terminal and to keep the voltage of the high electric potential terminal in a case where the control circuit is sending an ON signal. A comparison circuit compares a comparison signal and a reference signal, generates a bias voltage based on a result of the comparison between the comparison signal and the reference signal, and feeds back the bias voltage as a reference signal. A driving circuit supplies the bias voltage to a reference terminal while the control circuit is sending the OFF signal.

公开(公告)号：US09401402B2

公开(公告)日：2016-07-26

申请号：US14742740

申请日：2015-06-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shinichi Kohda ,  Masahiro Ishida

IPC: H01L29/04 ,  H01L29/20 ,  H01L21/02 ,  H01L29/10 ,  H01L29/778

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1079 ,  H01L29/7783 ,  H01L29/7786

Abstract: An object of the present invention is to provide a nitride semiconductor device and a nitride semiconductor substrate in each of which a nitride semiconductor layer formed on a silicon substrate is improved in crystallinity to realize a decrease in on-resistance of a field-effect transistor. The nitride semiconductor device includes a silicon substrate, and a first nitride semiconductor layer formed over the silicon substrate and including a nitride semiconductor, wherein a Si axial direction of the silicon substrate is different from a axial direction of the first nitride semiconductor layer.

Abstract translation: 本发明的目的是提供一种氮化物半导体器件和氮化物半导体衬底，其中形成在硅衬底上的氮化物半导体层的结晶度提高，从而实现场效应晶体管的导通电阻的降低。 氮化物半导体器件包括硅衬底和形成在硅衬底上并包括氮化物半导体的第一氮化物半导体层，其中硅衬底的Si 111轴向方向与第一衬底的<0001>轴向方向不同 氮化物半导体层。

公开(公告)号：US10211144B2

公开(公告)日：2019-02-19

申请号：US15580457

申请日：2016-07-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shinichi Kohda ,  Junichi Kimura ,  Ryosuke Usui ,  Tomohide Ogura ,  Atsushi Watanabe

IPC: H01L23/50 ,  H01L23/36 ,  H01L23/49 ,  H01L23/58 ,  H01L23/48 ,  H05K7/20 ,  H01L23/00 ,  H01L23/495

Abstract: This semiconductor device includes a semiconductor element mounted on a metal layer, first to third connection terminals that are provided on the semiconductor element, a first bus bar bonded to the first connection terminal, and a second bus bar bonded to the second connection terminal. The semiconductor element is bonded to the metal layer, and the first to third connection terminals are disposed on a top surface of the semiconductor element. One end of the first bus bar is bonded to the first connection terminal, another end of the first bus bar is an output unit, one end of the second bus bar is bonded to the second connection terminal, and another end of the second bus bar is bonded to the metal layer. A first surface of the semiconductor element and the second bus bar are at an identical potential.