公开(公告)号：US20110281443A1

公开(公告)日：2011-11-17

申请号：US13106140

申请日：2011-05-12

申请人： Pao-Hwa CHOU ,  Kota UMEZAWA ,  Yosuke WATANABE ,  Masayuki HASEGAWA

发明人： Pao-Hwa CHOU ,  Kota UMEZAWA ,  Yosuke WATANABE ,  Masayuki HASEGAWA

IPC分类号： H01L21/316 ,  C23C16/40

CPC分类号： C23C16/402

摘要： The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O2 gas and an O3 gas, and a second oxidizing gas comprising at least one selected from the group consisting of a H2O gas and a H2O2 gas, thereby forming a silicon oxide film on a surface of the object to be processed.

摘要翻译： 成膜方法包括将待处理物体转移到处理室中; 将待处理物体的温度控制在350℃以下; 将作为Si源气体和氧化气体的氨基硅烷气体供给到处理室中，其中，所述氧化气体由包含选自O 2气体和O 3气体中的至少一种的第一氧化气体构成， 包含选自H 2 O气体和H 2 O 2气体中的至少一种的氧化气体，从而在待处理物体的表面上形成氧化硅膜。

公开(公告)号：US20120282418A1

公开(公告)日：2012-11-08

申请号：US13552844

申请日：2012-07-19

申请人： Pao-Hwa CHOU ,  Kazuhide Hasebe

发明人： Pao-Hwa CHOU ,  Kazuhide Hasebe

IPC分类号： C23C16/36 ,  C23C16/52

CPC分类号： C23C16/36 ,  C23C16/45531 ,  C23C16/45546

摘要： A method for forming an SiCN film on target substrates placed in a process field inside a process container repeats a unit cycle a plurality of times to laminate thin films respectively formed, thereby forming the SiCN film with a predetermined thickness. The unit cycle includes performing and suspending supply of a silicon source gas, a nitriding gas, and a carbon hydride gas respectively from first, second, and third gas distribution nozzles to the process field. The unit cycle does not turn any one of the gases into plasma but heats the process field to a set temperature of 300 to 700° C. with the supply of the carbon hydride gas performed for a time period in total longer than that of the supply of the silicon source gas, so as to provide the SiCN film with a carbon concentration of 15.2% to 28.5%.

摘要翻译： 在放置在处理容器内的工艺场中的目标衬底上形成SiCN膜的方法重复多次单元循环以层压分别形成的薄膜，由此形成具有预定厚度的SiCN膜。 单位周期包括分别从第一，第二和第三气体分配喷嘴向处理场执行和暂停供应硅源气体，氮化气体和碳氢化合物气体。 单位循环不会将任何一种气体转化为等离子体，但是将过程场加热到设定温度为300至700℃，碳氢化合物气体的供应时间总计比供应更长 的硅源气体，以提供碳浓度为15.2％至28.5％的SiCN膜。

公开(公告)号：US20070167028A1

公开(公告)日：2007-07-19

申请号：US11623483

申请日：2007-01-16

申请人： Pao-Hwa CHOU ,  Kazuhide Hasebe

发明人： Pao-Hwa CHOU ,  Kazuhide Hasebe

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/36 ,  C23C16/452 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/3148 ,  H01L21/318

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.

摘要翻译： 通过CVD在靶基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体的第二工艺气体和含有碳氢化合物气体的第三工艺气体的工艺领域 。 该方法包括重复地向处理区域供应第一处理气体，向处理区域供应第二处理气体，以及向处理区域供应第三处理气体。 第三处理气体的供给包括通过激励机构激励第三处理气体的向处理场供给第三处理气体的激励期间。

公开(公告)号：US20120164847A1

公开(公告)日：2012-06-28

申请号：US13337743

申请日：2011-12-27

申请人： Toshiyuki IKEUCHI ,  Pao-Hwa CHOU ,  Kazuya YAMAMOTO ,  Kentarou SERA

发明人： Toshiyuki IKEUCHI ,  Pao-Hwa CHOU ,  Kazuya YAMAMOTO ,  Kentarou SERA

IPC分类号： H01L21/316 ,  C23C16/52

CPC分类号： C23C16/52 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/67109 ,  H01L21/67248

摘要： A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.

摘要翻译： 控制单元通过控制升温加热器16将反应管加热到负载温度，然后使半导体晶片接收在反应管中。 接下来，控制单元通过控制升温加热器将接收半导体晶片的反应管加热成膜温度，然后在半导体晶片上通过从反应管中提供成膜气体而形成薄膜 工艺气体导入管。 此外，控制单元将负载温度设定为高于成膜温度的温度。