利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

81 条记录 (耗时 0.021 秒)

    High temperature superconducting thick films
    1.
    发明申请
    High temperature superconducting thick films 审中-公开
    高温超导厚膜

    公开(公告)号：US20100009176A1

    公开(公告)日：2010-01-14

    申请号：US11094742

    申请日：2005-03-29

    申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

    发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

    IPC分类号： B32B15/04

    CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

    摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

    摘要翻译： 包括衬底，在衬底表面上的惰性氧化物材料层（通常惰性氧化物材料层具有光滑表面，即小于约2nm的RMS粗糙度）的物品，非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上，在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供，例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO，已经证明了Jc为1.4×10 6 A / cm 2，并且在1cm宽的样品上已经证明了具有210安培的投影Ic。

    Substrate structure for growth of highly oriented and/or epitaxial layers thereon
    2.
    发明授权
    Substrate structure for growth of highly oriented and/or epitaxial layers thereon 有权
    用于在其上生长高定向和/或外延层的衬底结构

    公开(公告)号：US06921741B2

    公开(公告)日：2005-07-26

    申请号：US10359808

    申请日：2003-02-07

    申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Quanxi Jia

    发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Quanxi Jia

    IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B32B19/00 ,  B32B9/00 ,  H01L39/00

    CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

    摘要： A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer.Jc′s of 2.3×106 A/cm2 have been demonstrated with projected Ic′s of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

    摘要翻译： 一种复合衬底结构，包括衬底，结晶金属氧化物层或晶体金属氧氮化物材料层，在结晶金属氧化物或结晶金属氧氮化物材料上具有岩盐状结构的定向立方氧化物材料层 层与诸如一层或多层缓冲材料的附加层一起设置在定向立方氧化物材料层上。 已经证明具有2.3×10 6 /厘米2以上的J C 2以及/ 对于包括柔性多晶金属基底的超导物品，在柔性多晶金属基底的表面上的惰性氧化物材料层，在该层上的结晶金属氧化物或结晶金属氮氧化物材料的层，横跨样品1cm宽的320安培 惰性氧化物材料，在结晶金属氧化物或结晶金属氧氮化物材料层上具有岩盐状结构的定向立方氧化物材料层，定向立方氧化物材料层上的缓冲材料层，以及 在缓冲材料层上的高温超导材料的顶层。

    High temperature superconducting thick films
    5.
    发明授权
    High temperature superconducting thick films 失效
    高温超导厚膜

    公开(公告)号：US06933065B2

    公开(公告)日：2005-08-23

    申请号：US10387952

    申请日：2003-09-25

    申请人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

    发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

    IPC分类号： C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B32B19/00 ,  B32B9/00 ,  H01L39/00

    CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

    摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

    摘要翻译： 包括衬底，在衬底表面上的惰性氧化物材料层（通常惰性氧化物材料层具有光滑表面，即小于约2nm的RMS粗糙度）的物品，非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上，在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供，例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO，其中J×C为1.4×10 6 A / cm 2， 已经证明了在1cm宽的样品上的210安培的投影电流为2安培。

    Buffer layers on metal alloy substrates for superconducting tapes
    7.
    发明授权
    Buffer layers on metal alloy substrates for superconducting tapes 失效
    用于超导磁带的金属合金基板上的缓冲层

    公开(公告)号：US06800591B2

    公开(公告)日：2004-10-05

    申请号：US10242895

    申请日：2002-09-11

    申请人： Quanxi Jia ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves

    发明人： Quanxi Jia ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves

    IPC分类号： H01B1200

    CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

    摘要： An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO3 buffer material in such an article, Jc's of up to 1.3×106 A/cm2 have been demonstrated with projected Ic's of over 200 Amperes across a sample 1 cm wide.

    摘要翻译： 一种制品，其包括基材，在所述基材表面上的至少一个中间层，在所述至少一个中间层上具有岩盐状结构的定向立方氧化物材料层，以及SrRuO 3缓冲材料层 在定向立方氧化物材料层与附加层（例如YBCO的HTS顶层）一起直接设置在SrRuO 3缓冲材料层的层上。 在这种制品中的至少一层SrRuO 3缓冲材料上的HTS顶层YBCO上，已经证明了高达1.3×10 6 A / cm 2的Jc值超过200安培的预计Ic 样品1厘米宽。

    High rate buffer layer for IBAD MgO coated conductors
    9.
    发明授权
    High rate buffer layer for IBAD MgO coated conductors 有权
    用于IBAD MgO涂层导体的高速缓冲层

    公开(公告)号：US07258927B2

    公开(公告)日：2007-08-21

    申请号：US11021800

    申请日：2004-12-23

    申请人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt

    发明人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt

    IPC分类号： B32B15/00

    CPC分类号： H01L39/2461

    摘要： Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

    摘要翻译： 提供了包括其上具有取向材料层的基底基材和在取向材料层上的氧化铪层的制品。 氧化铪层还可以包括二氧化铈，氧化钇，氧化镧，氧化钪，氧化钙和氧化镁等次级氧化物。 这样的制品还可以包括氧化铪层或二氧化铪层上的高温超导氧化物如YBCO的薄膜。

    Buffer layer for thin film structures
    10.
    发明授权
    Buffer layer for thin film structures 有权
    薄膜结构缓冲层

    公开(公告)号：US07736761B2

    公开(公告)日：2010-06-15

    申请号：US11591269

    申请日：2006-10-31

    申请人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

    发明人： Stephen R. Foltyn ,  Quanxi Jia ,  Paul N. Arendt ,  Haiyan Wang

    IPC分类号： B32B9/00

    CPC分类号： H01L39/2461 ,  Y10S428/93

    摘要： A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.

    摘要翻译： 提供了包括基底和钛酸锶和钌酸锶的混合物层的复合结构。 超导制品可以包括包含氧化镁的最外层，钛酸锶的缓冲层或钛酸锶和钌酸锶的混合物的复合结构和在缓冲层上的诸如YBCO的超导材料的顶层。