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    Method for forming a multi-layer seed layer for improved Cu ECP
    1.
    发明申请
    Method for forming a multi-layer seed layer for improved Cu ECP 有权
    用于形成用于改善Cu ECP的多层种子层的方法

    公开(公告)号：US20050110147A1

    公开(公告)日：2005-05-26

    申请号：US10723509

    申请日：2003-11-25

    申请人： Ping-Kun Wu ,  Horng-Huei Tseng ,  Chine-Gie Lo ,  Chao-Hsiung Wang ,  Shau-Lin Shue

    发明人： Ping-Kun Wu ,  Horng-Huei Tseng ,  Chine-Gie Lo ,  Chao-Hsiung Wang ,  Shau-Lin Shue

    IPC分类号： H01L23/532 ,  H01L23/48

    CPC分类号： H01L21/76807 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator layer; forming a diffusion barrier layer to line the damascene opening; forming a first seed layer overlying the diffusion barrier; plasma treating the first seed layer in-situ with a first treatment plasma comprising plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; forming a second seed layer overlying the first seed layer; forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and, planarizing the copper layer to form a metal interconnect structure.

    摘要翻译： 铜填充镶嵌结构及其形成方法，包括提供包括半导体衬底的衬底; 在所述基板上形成绝缘体层; 通过所述绝缘体层的厚度部分形成镶嵌开口; 形成扩散阻挡层以使所述镶嵌开口成线; 形成覆盖所述扩散阻挡层的第一晶种层; 用包含选自氩，氮，氢和NH 3的等离子体源气体的第一处理等离子体原位处理第一籽晶层; 形成覆盖所述第一种子层的第二种子层; 根据电化学电镀（ECP）工艺形成覆盖在第二晶种层上的铜层以填充镶嵌开口; 并且平坦化铜层以形成金属互连结构。

    Method for forming a multi-layer seed layer for improved Cu ECP
    2.
    发明授权
    Method for forming a multi-layer seed layer for improved Cu ECP 有权
    用于形成用于改善Cu ECP的多层种子层的方法

    公开(公告)号：US07265038B2

    公开(公告)日：2007-09-04

    申请号：US10723509

    申请日：2003-11-25

    申请人： Ping-Kun Wu ,  Horng-Huei Tseng ,  Chine-Gie Lo ,  Chao-Hsiung Wang ,  Shau-Lin Shue

    发明人： Ping-Kun Wu ,  Horng-Huei Tseng ,  Chine-Gie Lo ,  Chao-Hsiung Wang ,  Shau-Lin Shue

    IPC分类号： H01L21/26

    CPC分类号： H01L21/76807 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator layer; forming a diffusion barrier layer to line the damascene opening; forming a first seed layer overlying the diffusion barrier; plasma treating the first seed layer in-situ with a first treatment plasma comprising plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; forming a second seed layer overlying the first seed layer; forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and, planarizing the copper layer to form a metal interconnect structure.

    摘要翻译： 铜填充镶嵌结构及其形成方法，包括提供包括半导体衬底的衬底; 在所述基板上形成绝缘体层; 通过所述绝缘体层的厚度部分形成镶嵌开口; 形成扩散阻挡层以使所述镶嵌开口成线; 形成覆盖所述扩散阻挡层的第一晶种层; 用包含选自氩，氮，氢和NH 3的等离子体源气体的第一处理等离子体原位处理第一籽晶层; 形成覆盖所述第一种子层的第二种子层; 根据电化学电镀（ECP）工艺形成覆盖在第二晶种层上的铜层以填充镶嵌开口; 并且平坦化铜层以形成金属互连结构。

    Magnetic shielding for magnetically sensitive semiconductor devices
    4.
    发明授权
    Magnetic shielding for magnetically sensitive semiconductor devices 有权
    磁敏半导体器件的磁屏蔽

    公开(公告)号：US07183617B2

    公开(公告)日：2007-02-27

    申请号：US11060000

    申请日：2005-02-17

    申请人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

    发明人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

    IPC分类号： H01L27/14

    CPC分类号： H01L23/552 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2224/0401

    摘要： A magnetic shielding device is provided for protecting at least one magnetically sensitive component on a substrate according to embodiments of the present invention. The device comprises a first shield having a top portion, and one or more side portions, wherein the top and side portions along with the substrate encloses the magnetic sensitive component within for protecting the same from an external magnetic field, and wherein the magnetic shielding device contains at least two magnetic shielding materials with one having a relatively higher magnetic permeability property but lower magnetic saturation property while the other having a relatively lower magnetic permeability property but higher magnetic saturation property.

    摘要翻译： 根据本发明的实施例，提供了一种磁屏蔽装置，用于保护基板上的至少一个磁敏部件。 该装置包括具有顶部部分和一个或多个侧部部分的第一屏蔽件，其中顶部和侧部与基板一起包围磁敏部件，以便将其与外部磁场保护起来，并且其中磁屏蔽装置 包含至少两个磁屏蔽材料，具有较高磁导率性能但具有较低磁饱和性能的磁屏蔽材料，而另一种具有较低的磁导率性能但较高的磁饱和性能。

    Magnetic shielding for magnetically sensitive semiconductor devices
    5.
    发明申请
    Magnetic shielding for magnetically sensitive semiconductor devices 有权
    磁敏半导体器件的磁屏蔽

    公开(公告)号：US20060180880A1

    公开(公告)日：2006-08-17

    申请号：US11060000

    申请日：2005-02-17

    申请人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

    发明人： Chao-Hsiung Wang ,  Horng-Huei Tseng ,  Denny Tang

    IPC分类号： H01L29/82

    CPC分类号： H01L23/552 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01025 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2224/0401

    摘要： A magnetic shielding device is provided for protecting at least one magnetically sensitive component on a substrate according to embodiments of the present invention. The device comprises a first shield having a top portion, and one or more side portions, wherein the top and side portions along with the substrate encloses the magnetic sensitive component within for protecting the same from an external magnetic field, and wherein the magnetic shielding device contains at least two magnetic shielding materials with one having a relatively higher magnetic permeability property but lower magnetic saturation property while the other having a relatively lower magnetic permeability property but higher magnetic saturation property.

    摘要翻译： 根据本发明的实施例，提供了一种磁屏蔽装置，用于保护基板上的至少一个磁敏部件。 该装置包括具有顶部部分和一个或多个侧部部分的第一屏蔽件，其中顶部和侧部与基板一起包围磁敏部件，以便将其与外部磁场保护起来，并且其中磁屏蔽装置 包含至少两个磁屏蔽材料，具有较高磁导率性能但具有较低磁饱和性能的磁屏蔽材料，而另一种具有较低的磁导率性能但较高的磁饱和性能。

    Copper wiring with high temperature superconductor (HTS) layer
    6.
    发明申请
    Copper wiring with high temperature superconductor (HTS) layer 有权
    铜线与高温超导体（HTS）层

    公开(公告)号：US20050077627A1

    公开(公告)日：2005-04-14

    申请号：US10684224

    申请日：2003-10-10

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Chenming Hu ,  Chao-Hsiung Wang

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Chenming Hu ,  Chao-Hsiung Wang

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L23/48

    CPC分类号： H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor devices and methods of forming the semiconductor devices using an HTS (High Temperature Superconductor) layer in combination with a typical diffusion layer between the dielectric material and the copper (or other metal) conductive wiring. The HTS layer includes a superconductor material comprised of barium copper oxide and a rare earth element. The rare earth element yttrium is particularly suitable. For semiconductor devices having other semiconductor circuits or elements above the wiring, a capping layer of HTS material is deposited over the wiring before a cover layer of dielectric is deposited.

    摘要翻译： 使用HTS（高温超导体）层与介电材料和铜（或其它金属）导电布线之间的典型扩散层组合形成半导体器件的半导体器件和方法。 HTS层包括由氧化钡钡和稀土元素构成的超导体材料。 稀土元素钇特别适合。 对于具有其它半导体电路或布线之上的元件的半导体器件，在沉积覆盖层的电介质之前，在布线上沉积HTS材料的覆盖层。