FLIP-CHIP BUMPING METAL LAYER AND BUMP STRUCTURE

    公开(公告)号:US20240371806A1

    公开(公告)日:2024-11-07

    申请号:US18313020

    申请日:2023-05-05

    Abstract: Disclosed are techniques for integrated circuit device. In an aspect, an integrated circuit device includes a metallization structure that includes a top metal layer structure; a passivation layer on the metallization structure; a bump structure disposed on the first bump line structure; and a first polymer protection layer. The passivation layer may include one or more first openings. The first bump line structure may include one or more first extended portions respectively extending toward the top metal layer structure through the one or more first openings. The bump structure may be electrically coupled to the first bump line structure. The first polymer protection layer may be on the passivation layer, on a portion of the first bump line structure, and in contact with a side surface of the first bump line structure.

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