公开(公告)号：US08992691B2

公开(公告)日：2015-03-31

申请号：US13080097

申请日：2011-04-05

申请人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, Jr.

发明人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, Jr.

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67057 ,  G01N27/4161 ,  H01L21/02052 ,  H01L21/67017

摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

摘要翻译： 在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。 监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。 触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。 基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。 在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

公开(公告)号：US20120255577A1

公开(公告)日：2012-10-11

申请号：US13080097

申请日：2011-04-05

申请人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, JR.

发明人： Richard O. Henry ,  David F. Hilscher ,  Sandi E. Merritt ,  Charles J. Taft ,  Robert W. Zigner, JR.

IPC分类号： C23G1/36 ,  B08B3/10

CPC分类号： H01L21/67057 ,  G01N27/4161 ,  H01L21/02052 ,  H01L21/67017

摘要： A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

摘要翻译： 在用于半导体晶片的可再循环流体清洁系统中实施清洁溶液置换的方法包括激活包括在清洁系统中的电解反应器的电极电流。 监控电解反应器的电极电压和操作时间中的至少一个，直到达到触发点。 触发点包括达到预定阈值电压值的电极电压中的一个，达到预定计数器值的处理时间计数器和电极电压已经达到阈值电压值的时间值达到预定值。 基于实际晶片处理时间，晶片类型，处理的晶片数量和要剥离的材料的厚度中的一个或多个，处理时间计数器增加。 在达到触发点时，电极电流被去激活，清洁系统流体的至少一部分被排出并用新鲜的清洁流体代替。

公开(公告)号：US09005464B2

公开(公告)日：2015-04-14

申请号：US13169418

申请日：2011-06-27

申请人： Russell H. Arndt ,  David F. Hilscher

发明人： Russell H. Arndt ,  David F. Hilscher

IPC分类号： C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  C09K13/08 ,  H01L21/311 ,  H01L21/67

CPC分类号： C09K13/08 ,  H01L21/31111 ,  H01L21/67086

摘要： A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.

摘要翻译： 提供了一种工具和方法，用于混合多个部件并将多个部件的单一混合物馈送到工具中。 该方法包括调整蚀刻剂溶液的浓度。 该方法包括确定进入晶片处理工具的蚀刻室的多批晶片的每批晶片的蚀刻目标。 该方法还包括在单次运行期间将进入晶片处理工具的多批批晶片的每批晶片的40％NH 4 F浓度调节至49％HF。

公开(公告)号：US08940634B2

公开(公告)日：2015-01-27

申请号：US13171657

申请日：2011-06-29

申请人： Brett H. Engel ,  Lindsey Hall ,  David F. Hilscher ,  Randolph F. Knarr ,  Steven R. Soss ,  Jin Z. Wallner

发明人： Brett H. Engel ,  Lindsey Hall ,  David F. Hilscher ,  Randolph F. Knarr ,  Steven R. Soss ,  Jin Z. Wallner

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/528 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.

摘要翻译： 在半导体器件中形成重叠触点的方法包括在电介质层中形成第一触点; 蚀刻电介质层以形成与第一接触相邻的凹部，并且在蚀刻介电层的同时去除第一接触的顶部，其中在电介质层中形成凹部之后第一接触的底部保留在电介质层中 ; 以及在与所述第一接触件的底部相邻的所述凹部中形成第二触点，并且在所述第一接触件的底部的顶表面的顶部上形成第二接触。

公开(公告)号：US08835309B2

公开(公告)日：2014-09-16

申请号：US13613579

申请日：2012-09-13

申请人： David F. Hilscher ,  Christian Lavoie ,  Ahmet S. Ozcan

发明人： David F. Hilscher ,  Christian Lavoie ,  Ahmet S. Ozcan

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L31/00 ,  H01L23/48

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L29/665 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of performing a silicide contact process comprises a forming a nickel-platinum alloy (NiPt) layer over a semiconductor device structure; performing a first rapid thermal anneal (RTA) so as to react portions of the NiPt layer in contact with semiconductor regions of the semiconductor device structure, thereby forming metal rich silicide regions; performing a first wet etch to remove at least a nickel constituent of unreacted portions of the NiPt layer; performing a second wet etch using a dilute Aqua Regia treatment comprising nitric acid (HNO3), hydrochloric acid (HCl) and water (H2O) to remove any residual platinum material from the unreacted portions of the NiPt layer; and following the dilute Aqua Regia treatment, performing a second RTA to form final silicide contact regions from the metal rich silicide regions.

摘要翻译： 执行硅化物接触工艺的方法包括在半导体器件结构上形成镍 - 铂合金（NiPt）层; 执行第一快速热退火（RTA），以使NiPt层的与半导体器件结构的半导体区域接触的部分反应，由此形成富金属硅化物区域; 执行第一湿蚀刻以去除至少NiPt层的未反应部分的镍组分; 使用包含硝酸（HNO 3），盐酸（HCl）和水（H 2 O）的稀释Aqua Regia处理进行第二次湿蚀刻以从NiPt层的未反应部分去除任何残余的铂材料; 并且在稀释的Aqua Regia处理之后，执行第二个RTA从富金属硅化物区形成最终的硅化物接触区。

公开(公告)号：US20120326076A1

公开(公告)日：2012-12-27

申请号：US13169418

申请日：2011-06-27

申请人： Russell H. ARNDT ,  David F. Hilscher

发明人： Russell H. ARNDT ,  David F. Hilscher

IPC分类号： C09K13/08 ,  C23F1/08

CPC分类号： C09K13/08 ,  H01L21/31111 ,  H01L21/67086

摘要： A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.

摘要翻译： 提供了一种工具和方法，用于混合多个部件并将多个部件的单一混合物馈送到工具中。 该方法包括调整蚀刻剂溶液的浓度。 该方法包括确定进入晶片处理工具的蚀刻室的多批晶片的每批晶片的蚀刻目标。 该方法还包括在单次运行期间将进入晶片处理工具的多批批晶片的每批晶片的40％NH 4 F浓度调节至49％HF。

公开(公告)号：US20140073130A1

公开(公告)日：2014-03-13

申请号：US13613579

申请日：2012-09-13

申请人： David F. Hilscher ,  Christian Lavoie ,  Ahmet S. Ozcan

发明人： David F. Hilscher ,  Christian Lavoie ,  Ahmet S. Ozcan

IPC分类号： H01L21/3205

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L29/665 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of performing a silicide contact process comprises a forming a nickel-platinum alloy (NiPt) layer over a semiconductor device structure; performing a first rapid thermal anneal (RTA) so as to react portions of the NiPt layer in contact with semiconductor regions of the semiconductor device structure, thereby forming metal rich silicide regions; performing a first wet etch to remove at least a nickel constituent of unreacted portions of the NiPt layer; performing a second wet etch using a dilute Aqua Regia treatment comprising nitric acid (HNO3), hydrochloric acid (HCl) and water (H2O) to remove any residual platinum material from the unreacted portions of the NiPt layer; and following the dilute Aqua Regia treatment, performing a second RTA to form final silicide contact regions from the metal rich silicide regions.

摘要翻译： 执行硅化物接触工艺的方法包括在半导体器件结构上形成镍 - 铂合金（NiPt）层; 执行第一快速热退火（RTA），以使NiPt层的与半导体器件结构的半导体区域接触的部分反应，由此形成富金属硅化物区域; 执行第一湿蚀刻以去除至少NiPt层的未反应部分的镍组分; 使用包含硝酸（HNO 3），盐酸（HCl）和水（H 2 O）的稀释Aqua Regia处理进行第二次湿蚀刻以从NiPt层的未反应部分去除任何残余的铂材料; 并且在稀释的Aqua Regia处理之后，执行第二个RTA从富金属硅化物区形成最终的硅化物接触区。

公开(公告)号：US20130001786A1

公开(公告)日：2013-01-03

申请号：US13171657

申请日：2011-06-29

申请人： Brett H. Engel ,  Lindsey Hall ,  David F. Hilscher ,  Randolph F. Knarr ,  Steven R. Soss ,  Jin Z. Wallner

发明人： Brett H. Engel ,  Lindsey Hall ,  David F. Hilscher ,  Randolph F. Knarr ,  Steven R. Soss ,  Jin Z. Wallner

IPC分类号： H01L21/28 ,  H01L23/48

CPC分类号： H01L23/528 ,  H01L21/76816 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.

摘要翻译： 在半导体器件中形成重叠触点的方法包括在电介质层中形成第一触点; 蚀刻电介质层以形成与第一接触相邻的凹部，并且在蚀刻介电层的同时去除第一接触的顶部，其中在电介质层中形成凹部之后第一接触的底部保留在电介质层中 ; 以及在与所述第一接触件的底部相邻的所述凹部中形成第二触点，并且在所述第一接触件的底部的顶表面的顶部上形成第二接触。

公开(公告)号：US07482282B2

公开(公告)日：2009-01-27

申请号：US11691001

申请日：2007-03-26

申请人： David F. Hilscher ,  Ying Li

发明人： David F. Hilscher ,  Ying Li

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  H01L21/02068

摘要： A method for cleaning oxide from the interconnects of a semiconductor that are comprised of nickel (Ni) silicide or nickel-silicide alloys where nickel is the primary metallic component is disclosed. The cleaning comprises performing an SC1 cycle, exposing the wafer comprising a NiSi contact to an SC1 solution. This removes oxygen atoms from the silicon oxide of the nickel silicide. Next, a rinse cycle is performed on the wafer to remove the SC1 solution. Finally, an HCl cycle is performed. During this cycle, the wafer comprising an NiSi contact is introduced to an HCl solution, removing oxygen atoms from the nickel oxide of the NiSi. The method of the present invention provides for lower contact resistance of NiSi semiconductor devices, facilitating semiconductor devices that have the benefits of miniaturization allowed by the NiSi technology, and higher performance due to the reduced contact resistance.

摘要翻译： 公开了一种从镍（Ni）硅化物或镍 - 硅化物合金构成的半导体互连件中清除氧化物的方法，其中镍是主要的金属成分。 清洁包括执行SC1循环，将包含NiSi接触的晶片暴露于SC1溶液。 这从硅化镍的硅氧化物中除去氧原子。 接下来，在晶片上进行漂洗循环以除去SC1溶液。 最后，执行HCl循环。 在该循环期间，将包含NiSi接触的晶片引入HCl溶液中，从NiSi的氧化镍除去氧原子。 本发明的方法提供了NiSi半导体器件的较低的接触电阻，促进了具有NiSi技术允许的小型化的优点的半导体器件，以及由于降低的接触电阻而导致的更高的性能。

公开(公告)号：US20080236617A1

公开(公告)日：2008-10-02

申请号：US11691001

申请日：2007-03-26

申请人： David F. Hilscher ,  Ying Li

发明人： David F. Hilscher ,  Ying Li

IPC分类号： C23G1/02

CPC分类号： H01L21/02063 ,  H01L21/02068

摘要： A method for cleaning oxide from the interconnects of a semiconductor that are comprised of nickel (Ni) silicide or nickel-silicide alloys where nickel is the primary metallic component is disclosed. The cleaning comprises performing an SC1 cycle, exposing the wafer comprising a NiSi contact to an SC1 solution. This removes oxygen atoms from the silicon oxide of the nickel silicide. Next, a rinse cycle is performed on the wafer to remove the SC1 solution. Finally, an HCl cycle is performed. During this cycle, the wafer comprising an NiSi contact is introduced to an HCl solution, removing oxygen atoms from the nickel oxide of the NiSi. The method of the present invention provides for lower contact resistance of NiSi semiconductor devices, facilitating semiconductor devices that have the benefits of miniaturization allowed by the NiSi technology, and higher performance due to the reduced contact resistance.

摘要翻译： 公开了一种从镍（Ni）硅化物或镍 - 硅化物合金构成的半导体互连件中清除氧化物的方法，其中镍是主要的金属成分。 清洁包括执行SC1循环，将包含NiSi接触的晶片暴露于SC1溶液。 这从硅化镍的硅氧化物中除去氧原子。 接下来，在晶片上进行漂洗循环以除去SC1溶液。 最后，执行HCl循环。 在该循环期间，将包含NiSi接触的晶片引入HCl溶液中，从NiSi的氧化镍除去氧原子。 本发明的方法提供了NiSi半导体器件的较低的接触电阻，促进了具有NiSi技术允许的小型化的优点的半导体器件，以及由于降低的接触电阻而导致的更高的性能。