公开(公告)号：US20170086285A1

公开(公告)日：2017-03-23

申请号：US15303252

申请日：2015-05-12

Applicant: SABIC Global Technologies B.V.

Inventor： Jian Yang ,  Shengping Pan ,  Andries J.P. van Zyl

IPC: H05K1/02 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00 ,  B32B27/28 ,  B32B7/12 ,  B32B15/04 ,  B32B15/08 ,  B32B15/14 ,  B32B27/20 ,  H05K1/05 ,  B32B5/02

CPC classification number: H05K1/0204 ,  B32B5/022 ,  B32B5/024 ,  B32B7/12 ,  B32B15/043 ,  B32B15/08 ,  B32B15/14 ,  B32B15/18 ,  B32B15/20 ,  B32B27/20 ,  B32B27/281 ,  B32B27/285 ,  B32B2255/06 ,  B32B2255/26 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/0269 ,  B32B2262/062 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/302 ,  B32B2307/306 ,  B32B2307/538 ,  B32B2457/08 ,  H05K1/034 ,  H05K1/0346 ,  H05K1/0373 ,  H05K1/038 ,  H05K1/056 ,  H05K1/09 ,  H05K3/0061 ,  H05K2201/0129 ,  H05K2201/0154 ,  H05K2203/0759

Abstract: Disclosed herein is a circuit assembly including a polyetherimide dielectric layer; a conductive metal layer disposed on the dielectric layer; and a supporting metal matrix layer disposed on the dielectric layer on a side opposite the conductive metal layer. The polyetherimide dielectric layer includes a polyetherimide having a glass transition temperature of 200° C. or more. The circuit assembly has the same adhesion, within+10%, as determined by IPC-TM-650 test methods, before and after thermal stress at 280° C. for 30 minutes in accordance with SJ 20780-2000. Also disclosed are methods of preparing the circuit assembly, and articles including the circuit assembly.