公开(公告)号：US20140159094A1

公开(公告)日：2014-06-12

申请号：US14176981

申请日：2014-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Tae KIM ,  Dong Yeoul LEE

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract translation: 提供了波长转换发光二极管（LED）芯片。 波长转换的LED芯片包括LED芯片和波长转换层。 LED芯片发射预定波长区域的光。 波长转换层由含有至少一种荧光体的树脂形成，该荧光体将从LED芯片发射的光的一部分转换成不同波长区域的光。 波长转换层形成在LED芯片的上表面上，并具有凸起的弯月面形状的上表面。

公开(公告)号：US20150137168A1

公开(公告)日：2015-05-21

申请号：US14600741

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Tae KIM ,  Dong Yeoul LEE

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/58 ,  H01L33/56

CPC classification number: H01L33/504 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011

Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.

Abstract translation: 提供了波长转换发光二极管（LED）芯片。 波长转换的LED芯片包括LED芯片和波长转换层。 LED芯片发射预定波长区域的光。 波长转换层由含有至少一种荧光体的树脂形成，该荧光体将从LED芯片发射的光的一部分转换成不同波长区域的光。 波长转换层形成在LED芯片的上表面上，并具有凸起的弯月面形状的上表面。

公开(公告)号：US20170040494A1

公开(公告)日：2017-02-09

申请号：US15228164

申请日：2016-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Tae GIM ,  Il Ho AHN ,  In Bum YANG ,  Dong Yeoul LEE

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/46 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a semiconductor laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, the first conductive semiconductor layer and the active layer defining a first trench exposing a first portion of the first conductive semiconductor layer, and a second trench exposing a second portion of the first conductive semiconductor layer, a first finger electrode disposed in the exposed portion of the first conductive semiconductor layer in the first trench, an insulating layer disposed on an internal surface of the second trench, and a second finger electrode disposed on the insulating layer in the second trench and electrically connected to the second conductive semiconductor layer.

Abstract translation: 半导体发光器件包括包括第一导电半导体层，第二导电半导体层和设置在第一导电半导体层和第二导电半导体层之间的有源层的半导体层叠体，所述第一导电半导体层和有源层限定 暴露第一导电半导体层的第一部分的第一沟槽和暴露第一导电半导体层的第二部分的第二沟槽，设置在第一沟槽中的第一导电半导体层的暴露部分中的第一指状电极， 绝缘层，设置在第二沟槽的内表面上，第二指状电极设置在第二沟槽中的绝缘层上并电连接到第二导电半导体层。