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    Method of patterning block copolymer layer and patterned structure
    7.
    发明授权
    Method of patterning block copolymer layer and patterned structure 有权
    图案化嵌段共聚物层和图案结构的方法

    公开(公告)号：US09557639B2

    公开(公告)日：2017-01-31

    申请号：US14078921

    申请日：2013-11-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Yonsei University, University—Industry Foundation(UIF)

    Inventor： Mi-Jeong Kim ,  In Taek Han ,  June Huh ,  Seong-Jun Jeong ,  Haeng Deog Koh ,  Youn Jung Park

    IPC: G03F7/00 ,  B82B3/00 ,  B82Y40/00 ,  B82Y30/00

    CPC classification number: G03F7/0002 ,  B82B3/00 ,  B82B3/0066 ,  B82Y30/00 ,  B82Y40/00 ,  Y10T428/24802

    Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1, and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ⁡ ( n + 1 ) ] 1 3 ≤ r 1 - r 2 W ≤ 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ⁡ ( n - 1 ) ] 1 3 . Inequation ⁢ ⁢ 1

    Abstract translation: 一种图案化嵌段共聚物层的方法，所述方法包括：在其表面上提供具有引导图案的基材; 在引导图案的基板上形成嵌段共聚物层，嵌段共聚物层包括嵌段共聚物; 并且根据引导图案将嵌段共聚物自组装在基板上以形成n / 2个离散区域，其中引导图案包括具有90度弯曲部分的嵌段共聚物图案化区域，以及外部顶点和内部 90度弯曲部的顶点分别成圆形，外顶点分别具有第一曲率半径r1和内顶点，第二曲率半径r2，图案形成区域W的宽度，第一曲率半径r1和第二曲率半径 曲率半径r2满足等式1：2 + 2 - （1 + 2）[（n + 2）2 n（n + 1）] 1 3≤r 1 - r 2 W≤2 + 2 - （1 + 2 ）[（n-2）2 n（n-1）] 1 3。 不等式1

    Methods of patterning block copolymer layers and patterned structures
    8.
    发明授权
    Methods of patterning block copolymer layers and patterned structures 有权
    图案化嵌段共聚物层和图案结构的方法

    公开(公告)号：US09417520B2

    公开(公告)日：2016-08-16

    申请号：US14171919

    申请日：2014-02-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Haeng Deog Koh ,  Mi-Jeong Kim ,  In Taek Han

    IPC: H01L21/3105 ,  G03F7/00

    CPC classification number: G03F7/0002 ,  Y10T428/24802

    Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate including a topographic pattern on a surface of the substrate, wherein the topographic pattern includes a trench and a mesa; forming, on the surface of the substrate, an underlayer including a polymer, wherein the polymer includes a repeating unit derived from a substituted or unsubstituted aromatic vinyl monomer and has an anchoring group; heat-treating the underlayer to anchor the underlayer to the surface of the substrate via the anchoring group; irradiating the heat-treated underlayer with light to form a crosslinked polymer with a crosslink between carbon atoms of main chains of the polymer; forming a block copolymer layer on the underlayer including the crosslinked polymer; and heat-treating the block copolymer layer to form a self-assembled structure of the block copolymer directed by the topographic pattern.

    Abstract translation: 一种图案化嵌段共聚物层的方法，该方法包括：在基材的表面上提供包括地形图案的基材，其中所述地形图案包括沟槽和台面; 在基材表面上形成包含聚合物的底层，其中所述聚合物包含衍生自取代或未取代的芳族乙烯基单体并具有锚定基团的重复单元; 热处理底层以经由锚定组将底层锚定到基底的表面; 用光照射经热处理的底层，以形成具有聚合物主链碳原子之间交联的交联聚合物; 在包含交联聚合物的底层上形成嵌段共聚物层; 并且对所述嵌段共聚物层进行热处理以形成由所述形貌图案引导的嵌段共聚物的自组装结构。

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