公开(公告)号：US20220337772A1

公开(公告)日：2022-10-20

申请号：US17857135

申请日：2022-07-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM ,  KYUNGHO LEE

IPC: H04N5/369 ,  H04N5/349 ,  H04N9/04 ,  H04N5/347 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor operating in multiple resolution modes including a low resolution mode and a high resolution mode includes a pixel array including a plurality of pixels, wherein each pixel in the plurality of pixels comprises a micro-lens, a first subpixel including a first photodiode, a second subpixel including a second photodiode, and the first subpixel and the second subpixel are adjacently disposed and share a floating diffusion region. The image sensor also includes a row driver providing control signals to the pixel array to control performing of an auto focus (AF) function, such that performing the AF function includes performing the AF function according to pixel units in the high resolution mode and performing the AF function according to pixel group units in the low resolution mode. A resolution corresponding to the low resolution mode is equal to or less than ¼ times a resolution corresponding to the high resolution mode.

公开(公告)号：US20220303509A1

公开(公告)日：2022-09-22

申请号：US17509696

申请日：2021-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H04N9/04 ,  H04N5/3745 ,  H04N5/351

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

公开(公告)号：US20220360730A1

公开(公告)日：2022-11-10

申请号：US17867391

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.

公开(公告)号：US20210029316A1

公开(公告)日：2021-01-28

申请号：US16801887

申请日：2020-02-26

Applicant: Samsung Electronics Co., LTD.

Inventor： KYUNGHO LEE ,  EUNSUB SHIM ,  JUNGBIN YUN ,  SUNGSOO CHOI ,  MASATO FUJITA

IPC: H04N5/369 ,  H01L27/146 ,  H01L23/00 ,  H04N5/378 ,  H04N5/341 ,  H04N5/351 ,  H04N5/3745

Abstract: An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

公开(公告)号：US20240421171A1

公开(公告)日：2024-12-19

申请号：US18818755

申请日：2024-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAESUB JUNG ,  KYUNGHO LEE ,  MASATO FUJITA ,  DOOSIK SEOL ,  KYUNGDUCK LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

公开(公告)号：US20230199335A1

公开(公告)日：2023-06-22

申请号：US18110953

申请日：2023-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H04N25/13 ,  H04N25/50 ,  H04N25/77

CPC classification number: H04N25/13 ,  H04N25/50 ,  H04N25/77

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

公开(公告)号：US20250016469A1

公开(公告)日：2025-01-09

申请号：US18891528

申请日：2024-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG BIN YUN ,  KYUNGHO LEE

IPC: H04N25/704 ,  H04N25/44 ,  H04N25/766 ,  H04N25/778

Abstract: An electronic device includes an image sensor that generates image data, and an image processor that processes the image data. The image sensor includes a pixel array including pixels repeatedly disposed along a row direction and a column direction. Each of pixels belonging to a first row of rows of the pixel array includes sub-pixels each connected to one of a first transmission metal line, a second transmission metal line, and a third transmission metal line. In response to signals respectively applied to the first to third transmission metal lines, at least a part of charges integrated at the sub-pixels of the pixels belonging to the first row from among the pixels is diffused to corresponding floating diffusion areas.

公开(公告)号：US20230268366A1

公开(公告)日：2023-08-24

申请号：US18097749

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungki BAEK ,  KYUNGHO LEE ,  TAESUB JUNG ,  SEUNGKI JUNG ,  JUNGHYUNG PYO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a substrate including a pixel region, the substrate extending in a first direction and a second direction intersecting the first direction, first and second photoelectric conversion regions disposed in the pixel region and adjacent to each other in a first direction, a deep device isolation pattern penetrating the substrate in a third direction perpendicular to the first and second directions, and surrounding the pixel region, the deep device isolation pattern comprising first extensions extending in the second direction between the first and second photoelectric conversion regions, the first extensions spaced apart from each other in the second direction, a plurality of first transfer gate electrodes vertically overlapping with the first photoelectric conversion region, and a plurality of second transfer gate electrodes vertically overlapping with the second photoelectric conversion region. The first photoelectric conversion region extends in the second direction under the plurality of first transfer gate electrodes.

公开(公告)号：US20220285413A1

公开(公告)日：2022-09-08

申请号：US17501584

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor includes a pixel array including pixels, wherein each pixel includes at least one photodiode generating electrical charge and a pixel circuit providing a pixel signal based on the electrical charge. The images sensor also includes a logic circuit configured to generate an image based on the pixel signal, wherein the pixel circuit includes a parallel-connected first reset transistor and second reset transistor, and the logic circuit determines whether the second reset transistor is turned ON/OFF based on a level of incident light received by the at least one photodiode during an exposure time period.

公开(公告)号：US20210225906A1

公开(公告)日：2021-07-22

申请号：US17224655

申请日：2021-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.