公开(公告)号：US20250160018A1

公开(公告)日：2025-05-15

申请号：US18917389

申请日：2024-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggeun ROH ,  Kyungbae Park ,  Sungyoung Yun ,  Younhee Lim ,  Hyochul Kim

IPC: H01L27/146 ,  G02B5/20 ,  H04N25/13 ,  H10K39/32

Abstract: An image sensor includes a sensor substrate including a plurality of photosensitive cells configured to sense light, a color filter layer on the sensor substrate, the color filter layer including a plurality of red color filters and a plurality of clear filters, the plurality of red color filters and the plurality of clear filters being alternately disposed, and a band stop filter facing the color filter layer and configured to have an absorption spectrum having an absorption peak wavelength of about 520 nanometers to about 620 nanometers.

公开(公告)号：US09979018B2

公开(公告)日：2018-05-22

申请号：US15079961

申请日：2016-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin Ham ,  Jaeman Choi ,  Seungsik Hwang ,  Younhee Lim ,  Jaejun Chang

IPC: H01M4/48 ,  H01M4/587 ,  H01M4/62 ,  H01M4/04 ,  H01M4/36 ,  H01M4/583 ,  H01M4/38 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0525 ,  H01M4/02

CPC classification number: H01M4/483 ,  H01M4/049 ,  H01M4/364 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/583 ,  H01M4/587 ,  H01M4/62 ,  H01M4/625 ,  H01M10/052 ,  H01M10/0525 ,  H01M2004/028

Abstract: Disclosed is an electrode active material including nanostructures including boron-doped alumina. An electrode including the nanostructures, an energy storage device including the electrode, and a method of preparing the electrode active material are also disclosed.

公开(公告)号：US20230208531A1

公开(公告)日：2023-06-29

申请号：US18148124

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd. ,  INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION

Inventor： Chul Joon Heo ,  Hyunchae Chun ,  Seoyeon Oh ,  Seonghyeon Cho ,  Kyung Bae Park ,  Hwijoung Seo ,  Younhee Lim

IPC: H04B10/69 ,  H04B10/50

CPC classification number: H04B10/6971 ,  H04B10/50

Abstract: A receiver of an optical communication system includes an organic photoelectric conversion device configured to convert optical signals received from a transmitter into an electrical signal; and a demodulator configured to input the electrical signal to a trained artificial neural network and demodulate the electrical signal based on an output of the trained artificial neural network.

公开(公告)号：US08926871B2

公开(公告)日：2015-01-06

申请号：US13857367

申请日：2013-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younhee Lim ,  Yeong Suk Choi ,  Soo Ghang Ihn ,  Jong Hyeok Park ,  Jung Kyu Kim

IPC: H01B1/08 ,  B05D5/12 ,  H01L35/24 ,  H01L51/42 ,  H01L31/0216

CPC classification number: H01L31/02167 ,  C01B13/326 ,  C01G1/02 ,  C01G23/00 ,  C01G23/053 ,  C01P2002/82 ,  C01P2002/85 ,  C01P2006/40 ,  H01L51/422 ,  H01L51/4253 ,  H01L51/4273 ,  Y02E10/549

Abstract: According to example embodiments, a hybrid metal oxide having a network structure includes an oxygen atom that is covalently bonded to a first metal and a second metal. At least one of the first metal and the second metal has two or more oxidation states. A solar cell may have an interlayer including the hybrid metal oxide. According to example embodiments, a hybrid metal oxide may be formed using a sol-gel process from a solution including a first metal precursor and a second metal precursor.

Abstract translation: 根据示例性实施方案，具有网络结构的杂化金属氧化物包括共价键合到第一金属和第二金属的氧原子。 第一金属和第二金属中的至少一个具有两个或更多个氧化态。 太阳能电池可以具有包含杂化金属氧化物的中间层。 根据示例性实施例，可以使用溶胶 - 凝胶法从包括第一金属前体和第二金属前体的溶液形成杂化金属氧化物。

公开(公告)号：US12293855B2

公开(公告)日：2025-05-06

申请号：US17898416

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Younhee Lim ,  Sangyeon Pak ,  Jiwon Son ,  Yong Wan Jin ,  SeungNam Cha ,  Kyungbae Park ,  Chuljoon Heo

IPC: H01B1/06 ,  C23C22/82 ,  H01B1/10 ,  H01L29/45 ,  H10K10/84 ,  H10K30/82 ,  H10K50/828 ,  H10K39/32 ,  H10K65/00

Abstract: A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm/sq.

公开(公告)号：US20250133895A1

公开(公告)日：2025-04-24

申请号：US18909489

申请日：2024-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyochul KIM ,  Younggeun Roh ,  Kyungbae Park ,  Younhee Lim ,  Sungyoung Yun ,  Sungmo Ahn

IPC: H10K39/32

Abstract: Am image sensor including a semiconductor substrate into which a plurality of photosensitive devices are integrated; a band filter array including a plurality of band filters, wherein each band filter of the plurality of band filters is configured to resonate light included in a specific wavelength band from among incident light, and to output the resonated light toward the semiconductor substrate; an active layer between the semiconductor substrate and the band filter array, and configured to generate excitons using the resonated light received from the band filter array; and an intermediate layer between the active layer and the semiconductor substrate, and configured to transmit at least one of the resonated light or the excitons to the semiconductor substrate