APPARATUS FOR TREATING SUBSTRATE
    3.
    发明申请

    公开(公告)号:US20210023582A1

    公开(公告)日:2021-01-28

    申请号:US16936132

    申请日:2020-07-22

    Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a fluid supply unit for supplying supercritical fluid to the treatment space, and a controller configured to control the fluid supply unit, wherein the fluid supply unit is configured to selectively supply the supercritical fluid at a first density or a second density higher than the first density into the treatment space. Thus, drying efficiency of the substrate when drying the substrate using the supercritical fluid may be improved.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20220415680A1

    公开(公告)日:2022-12-29

    申请号:US17664243

    申请日:2022-05-20

    Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

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