APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING A SUBSTRATE

    公开(公告)号:US20250100029A1

    公开(公告)日:2025-03-27

    申请号:US18975080

    申请日:2024-12-10

    Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes first treating a substrate in a treating space according to a reference recipe; second treating a substrate in the treating space according to the reference recipe after the first treating; and optimizing an inner ambient of the treating space according to the reference recipe, and wherein the optimizing includes a purge operation of supplying and discharging a treating fluid to/from the treating space.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE
    2.
    发明公开

    公开(公告)号:US20240170304A1

    公开(公告)日:2024-05-23

    申请号:US18515611

    申请日:2023-11-21

    CPC classification number: H01L21/67017 H01L21/67109

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes treating modules having an opening for taking in and taking out a substrate and which are stacked on each other; and an air flow generating member for generating a downward airflow at each treating module, and wherein the air flow generating member includes: a pan unit configured to supply an air; a spray unit configured to be provided above the treating module and which sprays an air supplied from the pan unit; and an exhaust unit configured to exhaust an air sprayed by the spray unit to outside of the treating module.

    APPARATUS FOR TREATING SUBSTRATE
    3.
    发明申请

    公开(公告)号:US20210023582A1

    公开(公告)日:2021-01-28

    申请号:US16936132

    申请日:2020-07-22

    Abstract: An apparatus for treating a substrate includes a process chamber having a treatment space defined therein, a support unit for supporting the substrate in the treatment space, a fluid supply unit for supplying supercritical fluid to the treatment space, and a controller configured to control the fluid supply unit, wherein the fluid supply unit is configured to selectively supply the supercritical fluid at a first density or a second density higher than the first density into the treatment space. Thus, drying efficiency of the substrate when drying the substrate using the supercritical fluid may be improved.

    METHOD AND APPARATUS FOR TREATING SUBSTRATE
    5.
    发明公开

    公开(公告)号:US20230402295A1

    公开(公告)日:2023-12-14

    申请号:US17835498

    申请日:2022-06-08

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a high pressure chamber configured to form a treating space for performing a supercritical treating process therein; a substrate support unit configured to support a substrate at the treating space; a fluid supply unit configured to supply a treating fluid to the treating space; and an exhaust unit configured to exhaust an atmosphere of the treating space, and wherein the fluid supply unit comprises a cover plate opposite to a treating surface of a substrate supported by the substrate support unit, and having a supply hole for supplying the treating fluid to the treating surface.

    APPARATUS FOR TREATING A SUBSTRATE
    6.
    发明公开

    公开(公告)号:US20230384029A1

    公开(公告)日:2023-11-30

    申请号:US17825420

    申请日:2022-05-26

    CPC classification number: F26B5/005

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a substrate support unit configured to support a substrate in the treating space; and a fluid supply unit configured to supply a fluid in a supercritical state to the treating space, wherein the fluid supply unit comprises: a supply line provided at a top wall of the chamber; and a discharge unit installed at the top wall of the chamber and configured to discharge a fluid to a substrate, and wherein the discharge unit comprises: a body having a discharge fluid channel for the fluid; a nozzle plate provided at a discharge end of the body; and a blocking plate within the discharge fluid channel and spaced apart from the nozzle plate.

    METHOD FOR TREATING SUBSTRATE
    7.
    发明申请

    公开(公告)号:US20210020430A1

    公开(公告)日:2021-01-21

    申请号:US16929190

    申请日:2020-07-15

    Abstract: Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

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