公开(公告)号：US20230288811A1

公开(公告)日：2023-09-14

申请号：US18310704

申请日：2023-05-02

Applicant: SEMES CO, LTD.

Inventor： Moon Hyung BAE ,  Hye Bin BAEK ,  Youngseo AN ,  Euntark LEE ,  Min Jung PARK ,  Seunghan LEE ,  Jung-Hyun LEE

IPC: G03F7/16 ,  H01L21/687 ,  H01L21/67

CPC classification number: G03F7/167 ,  H01L21/68742 ,  H01L21/67017 ,  H01L21/67103

Abstract: The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.

公开(公告)号：US20230051256A1

公开(公告)日：2023-02-16

申请号：US17885865

申请日：2022-08-11

Applicant: SEMES CO., LTD.

Inventor： Sung-Gyu LEE ,  Jung-Hyun LEE ,  Hye Bin BAEK ,  Dae Woon LEE ,  Dongwoon PARK

IPC: G03F7/16

Abstract: Disclosed is an apparatus for treating a substrate, which includes: a first unit configured to perform a coating process of forming a film on a substrate; a transfer unit including a transfer robot transferring a substrate for which the coating process is terminated; and a controller controlling the first unit and the transfer unit, in which the controller controls the substrate for which the coating process is terminated in the first unit to rotate at a first rotational velocity until the substrate is transferred by the transfer unit.

公开(公告)号：US20210132499A1

公开(公告)日：2021-05-06

申请号：US17084903

申请日：2020-10-30

Applicant: SEMES CO., LTD.

Inventor： Moon Hyung BAE ,  Hye Bin BAEK ,  Youngseo AN ,  Euntark LEE ,  Min Jung PARK ,  Seunghan LEE ,  Jung-Hyun LEE

IPC: G03F7/16 ,  H01L21/687

Abstract: The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.

公开(公告)号：US20210054507A1

公开(公告)日：2021-02-25

申请号：US16997491

申请日：2020-08-19

Applicant: SEMES CO., LTD.

Inventor： Seunghan LEE ,  Jongsu CHOI ,  Jong Seok SEO ,  Junho SEO ,  Younghun JUNG ,  Kyungjin SEO ,  Jung-Hyun LEE ,  Moon Hyung BAE ,  Sang Jin BAE

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/44

Abstract: An embodiment of the inventive concept provides an apparatus for treating a substrate. The apparatus for treating a substrate includes a chamber having a treating space inside the chamber and a gas inlet unit entering a gas into the treating space. The gas inlet unit includes an introduction pipe through which the gas is entered, and a discharging plate in which a discharging hole discharging the gas entered through the introduction pipe is formed. The discharging hole is arranged such that density for each area of the discharging plate is different.