公开(公告)号：US20190355873A1

公开(公告)日：2019-11-21

申请号：US16531204

申请日：2019-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryo ARASAWA ,  Hideaki SHISHIDO

IPC: H01L33/16 ,  H01L27/12

Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

公开(公告)号：US20200295199A1

公开(公告)日：2020-09-17

申请号：US16886906

申请日：2020-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryo ARASAWA ,  Hideaki SHISHIDO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/49

Abstract: A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×1013 A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.

公开(公告)号：US20230290317A1

公开(公告)日：2023-09-14

申请号：US18200081

申请日：2023-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi UMEZAKI ,  Ryo ARASAWA

IPC: G09G3/36 ,  G11C19/18 ,  H01L27/12

CPC classification number: G09G3/3677 ,  G11C19/184 ,  H01L27/1251 ,  H01L28/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  G09G3/3266

Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

公开(公告)号：US20220406268A1

公开(公告)日：2022-12-22

申请号：US17848488

申请日：2022-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi UMEZAKI ,  Ryo ARASAWA

IPC: G09G3/36 ,  G11C19/18 ,  H01L27/12 ,  H01L49/02

Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

公开(公告)号：US20220293818A1

公开(公告)日：2022-09-15

申请号：US17751758

申请日：2022-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryo ARASAWA ,  Hideaki SHISHIDO

IPC: H01L33/16 ,  H01L27/12

Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge oft region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

公开(公告)号：US20180226040A1

公开(公告)日：2018-08-09

申请号：US15866514

申请日：2018-01-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi UMEZAKI ,  Ryo ARASAWA

IPC: G09G3/36 ,  H01L49/02 ,  H01L27/12 ,  G11C19/18 ,  G09G3/34 ,  G09G3/3266

Abstract: It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

公开(公告)号：US20170004788A1

公开(公告)日：2017-01-05

申请号：US15264014

申请日：2016-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo ARASAWA ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: G09G3/36 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335

CPC classification number: G09G3/3614 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/08 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

Abstract translation: 在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个 在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被​​截止，并且所述图像信号在所述保持周期中保持至少30秒。 像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

公开(公告)号：US20160232868A1

公开(公告)日：2016-08-11

申请号：US15134937

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo ARASAWA ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: G09G3/36 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L29/24 ,  H01L21/467 ,  H01L21/477 ,  H01L29/786 ,  H01L21/02

CPC classification number: G09G3/3614 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/08 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

Abstract translation: 在包括显示部分中的多个像素并且被配置为在多个帧周期中进行显示的液晶显示装置中，每个帧周期包括写入周期和保持周期，并且在将图像信号输入到每个 在所述写入周期中的所述多个像素中，包括在所述多个像素中的每一个中的晶体管被​​截止，并且所述图像信号在所述保持周期中保持至少30秒。 像素包括具有氧化物半导体层的半导体层，氧化物半导体层的载流子浓度小于1×10 14 / cm 3。

公开(公告)号：US20230132598A1

公开(公告)日：2023-05-04

申请号：US18090634

申请日：2022-12-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Erika TAKAHASHI ,  Katsuaki TOCHIBAYASHI ,  Ryo ARASAWA

IPC: H01L29/24 ,  H10B12/00 ,  H01L27/12

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

公开(公告)号：US20210175334A1

公开(公告)日：2021-06-10

申请号：US17047236

申请日：2019-04-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Erika TAKAHASHI ,  Katsuaki TOCHIBAYASHI ,  Ryo ARASAWA

IPC: H01L29/24 ,  H01L27/12 ,  H01L27/108

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.