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公开(公告)号:US20220320176A1
公开(公告)日:2022-10-06
申请号:US17709413
申请日:2022-03-31
Applicant: SEOUL VIOSYS CO., LTD
Inventor: Jong Min JANG , Sung Hyun LEE
Abstract: A unit pixel includes a first light emitting stack, a second light emitting stack disposed under the first light emitting stack, and a third light emitting stack disposed under the second light emitting stack, in which at least one light emitting stack among the first through third light emitting stacks has a mirror symmetrical structure with respect to at least one vertical plane passing through a center of the at least one light emitting stack in plan view.
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公开(公告)号:US20220336427A1
公开(公告)日:2022-10-20
申请号:US17719323
申请日:2022-04-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Sung Hyun LEE
IPC: H01L25/075 , H01L23/00 , H01L33/44 , H01L33/00
Abstract: A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.
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公开(公告)号:US20160276516A1
公开(公告)日:2016-09-22
申请号:US15168159
申请日:2016-05-30
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Ki Yon PARK , Hwa Mok KIM , Kyu Ho LEE , Sung Hyun LEE , Hyung Kyu KIM
IPC: H01L31/09 , H01L31/0304 , H01L31/18 , H01L31/108
CPC classification number: H01L31/09 , H01L31/022408 , H01L31/03044 , H01L31/03048 , H01L31/108 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544
Abstract: An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.
Abstract translation: 一种紫外线(UV)光检测装置,包括:基板; 设置在所述基板上的第一氮化物层; 设置在第一氮化物层和衬底之间的第二氮化物层; 设置在所述第一氮化物层上的光吸收层; 以及设置在光吸收层上的肖特基结层。
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公开(公告)号:US20160043263A1
公开(公告)日:2016-02-11
申请号:US14922946
申请日:2015-10-26
Applicant: Seoul Viosys Co., Ltd.
Inventor: Ki Yon PARK , Hwa Mok KIM , Kyu Ho LEE , Sung Hyun LEE , Hyung Kyu KIM
IPC: H01L31/108 , H01L31/0232 , H01L31/0304
CPC classification number: H01L31/108 , H01L31/02322 , H01L31/03044 , H01L31/03048 , H01L31/1013 , H01L31/1848 , H01L31/1856 , Y02E10/544
Abstract: A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.
Abstract translation: 光检测装置包括第一氮化物层,设置在第一氮化物层上的光吸收层和设置在光吸收层上的肖特基结层。 根据光检测装置的光致发光(PL)特性测量,第一峰值光强度大于第二峰值光强度,第一峰值光强度是从光吸收层发射的光的峰值光强度, 并且第二峰值光强度是从第一氮化物层发射的光的峰值光强度。
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公开(公告)号:US20150115318A1
公开(公告)日:2015-04-30
申请号:US14584732
申请日:2014-12-29
Applicant: Seoul Viosys Co., Ltd.
Inventor: Ki Yon PARK , Hwa Mok KIM , Kyu Ho LEE , Sung Hyun LEE , Hyung Kyu KIM
IPC: H01L31/0304 , H01L31/11
CPC classification number: H01L31/03048 , H01L31/022408 , H01L31/03044 , H01L31/108 , H01L31/11 , H01L31/1848 , H01L31/1852 , H01L31/1856 , Y02E10/544
Abstract: An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer.
Abstract translation: 一种紫外线(UV)光检测装置,包括:第一氮化物层; 设置在所述第一氮化物层上的次级光吸收层; 设置在次光吸收层上的初级光吸收层; 以及设置在初级光吸收层上的肖特基结层。 二次光吸收层包括具有比初级光吸收层低的带隙能量的氮化物层。
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公开(公告)号:US20210202815A1
公开(公告)日:2021-07-01
申请号:US17133623
申请日:2020-12-23
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Sung Hyun LEE , Chang Yeon KIM
Abstract: A light emitting device including a first light emitting stack, a second light emitting stack disposed under the first light emitting stack, a third light emitting stack disposed under the second light emitting stack, first, second, third, and fourth connection electrodes disposed over the first light emitting stack, and electrically connected to the first, second, and third light emitting stacks, and bonding metal layers disposed on upper surfaces of the first, second, third, and fourth connection electrodes, in which each of the first, second, third, and fourth connection electrodes includes a groove on an upper surface thereof, and the bonding metal layers cover the grooves of the first, second, third, and fourth connection electrodes, respectively.
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公开(公告)号:US20150084061A1
公开(公告)日:2015-03-26
申请号:US14496998
申请日:2014-09-25
Applicant: Seoul Viosys Co., Ltd.
Inventor: Ki Yon PARK , Hwa Mok KIM , Kyu-Ho LEE , Sung Hyun LEE , Hyung Kyu KIM
IPC: H01L31/108 , H01L31/18 , H01L31/0304
CPC classification number: H01L31/108 , H01L31/03044 , H01L31/03048 , H01L31/1848 , H01L31/1856 , Y02E10/544 , Y02P70/521
Abstract: A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure.
Abstract translation: 光检测装置包括第一氮化物层,设置在第一氮化物层上的低电流阻挡层,设置在低电流阻挡层上的光吸收层和设置在光吸收层上的肖特基结层。 低电流阻挡层包括多层结构。
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公开(公告)号:US20250006869A1
公开(公告)日:2025-01-02
申请号:US18885554
申请日:2024-09-13
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Chi Hyun IN , Jun Yong PARK , Kyu Ho LEE , Dae Woong Suh , Jong Hyeon CHAE , Chang Hoon KIM , Sung Hyun LEE
Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.
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公开(公告)号:US20230282797A1
公开(公告)日:2023-09-07
申请号:US18197729
申请日:2023-05-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Sung Hyun LEE , Chang Yeon KIM
CPC classification number: H01L33/62 , H01L27/156 , H01L33/382 , H01L33/40 , H01L33/486
Abstract: A light emitting device including a first light emitting stack, a second light emitting stack disposed under the first light emitting stack, a third light emitting stack disposed under the second light emitting stack, first, second, third, and fourth connection electrodes disposed over the first light emitting stack, and electrically connected to the first, second, and third light emitting stacks, and bonding metal layers disposed on upper surfaces of the first, second, third, and fourth connection electrodes, in which each of the first, second, third, and fourth connection electrodes includes a groove on an upper surface thereof, and the bonding metal layers cover the grooves of the first, second, third, and fourth connection electrodes, respectively.
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公开(公告)号:US20220328719A1
公开(公告)日:2022-10-13
申请号:US17717145
申请日:2022-04-11
Applicant: Seoul Viosys Co., Ltd
Inventor: Jong Min JANG , Jin Hwa SHIN , Seung Jo YUN , Sung Hyun LEE
IPC: H01L33/22 , H01L25/075 , H01L33/46
Abstract: A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.
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