公开(公告)号：US20250006869A1

公开(公告)日：2025-01-02

申请号：US18885554

申请日：2024-09-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong Suh ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

Abstract: A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

公开(公告)号：US20150287900A1

公开(公告)日：2015-10-08

申请号：US14744969

申请日：2015-06-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyu Ho LEE ,  Chang Hoon KIM ,  Jae Ryang CHOI ,  Dae Woong SUH

IPC: H01L33/62 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L24/17 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method of manufacturing a light-emitting diode (LED) chip including forming an LED on a first substrate, the LED including an N-type and a P-type semiconductor layer, the LED being formed to expose surfaces of the N-type and P-type semiconductor layers, forming bumps respectively electrically connected to the N-type and P-type semiconductor layers, forming electrode pads corresponding to the bumps on a second substrate, aligning the LED chip and the second substrate so that the bumps respectively correspond to the electrode pads, and increasing a temperature of the bumps to a first temperature, applying a pressure to the first and second substrates, and increasing the temperature of the bumps to a second temperature for a first time period while maintaining the pressure, and maintaining the second temperature from the first time period to a second time period while maintaining the pressure, and then releasing the pressure and cooling the bumps.

Abstract translation: 一种制造包括在第一基板上形成LED的发光二极管（LED）芯片的方法，所述LED包括N型和P型半导体层，所述LED形成为暴露所述N型和 形成分别电连接到N型和P型半导体层的凸块，形成与第二衬底上的凸块相对应的电极焊盘，使LED芯片和第二衬底对准，使得凸起分别对应于 电极焊盘，并且将凸块的温度升高到第一温度，向第一和第二基板施加压力，并且在保持压力的同时将凸块的温度第一时间提高到第二温度，并且保持 第二温度从第一时间段到第二时间段同时保持压力，然后释放压力并冷却凸块。

公开(公告)号：US20190019923A1

公开(公告)日：2019-01-17

申请号：US16125769

申请日：2018-09-10

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong SUH ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/50 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/20 ,  H01L33/44 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0033

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.