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1.发明授权Generating read thresholds using gradient descent and without side information 有权使用梯度下降和无旁边信息生成读取阈值公开(公告)号：US08923062B1
公开(公告)日：2014-12-30
申请号：US13935714
申请日：2013-07-05
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K. H. Lee , Jason Bellorado , Arunkumar Subramanian , Lingqi Zeng , Xiangyu Tang , Ameen Aslam
CPC classification number: G11C16/26 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/3404
Abstract: A next read threshold is determined by determining a first number of solid state storage cells having a stored voltage which falls into a first voltage range and determining a second number of solid state storage cells having a stored voltage which falls into a second voltage range. A gradient is determine by taking a difference between the first number of solid state storage cells and the second number of solid state storage cells. The next read threshold is determined based at least in part on the gradient.
Abstract translation: 通过确定具有落入第一电压范围的存储电压的第一数量的固态存储单元并且确定具有落入第二电压范围的存储电压的第二数量的固态存储单元来确定下一个读取阈值。 通过取第一数量的固态存储单元和第二数量的固态存储单元之间的差来确定梯度。 至少部分地基于梯度来确定下一个读取阈值。
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2.发明申请GENERATING READ THRESHOLDS USING GRADIENT DESCENT AND WITHOUT SIDE INFORMATION 审中-公开生成使用梯级下载并且无信息的读取阈值公开(公告)号：US20150078084A1
公开(公告)日：2015-03-19
申请号：US14550764
申请日：2014-11-21
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K.H. Lee , Jason Bellorado , Arunkumar Subramanian , Lingqi Zeng , Xiangyu Tang , Ameen Aslam
CPC classification number: G11C16/26 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/3404
Abstract: A first bit position of a cell in solid state storage is read where a sorting bit is obtained using the read of the first bit position. A second bit position of the cell is read for a first time, including by setting a first read threshold associated with the second bit position to a first value and setting a second read threshold associated with the second bit position to a second value. The second bit position of the cell is read for a second time, including by setting the first read threshold to a third value and setting the second read threshold to a fourth value. A new value for the first read threshold and for the second read threshold is generated using the sorting bit, the first read, and the second read.
Abstract translation: 读取固态存储器中的单元的第一位位置，其中使用第一位位置的读取获得排序位。 第一次读取单元的第二位位置，包括通过将与第二位位置相关联的第一读取阈值设置为第一值并将与第二位位置相关联的第二读取阈值设置为第二值。 第二次读取单元的第二位位置，包括通过将第一读取阈值设置为第三值并将第二读取阈值设置为第四值。 使用排序位，第一读取和第二读取生成第一读取阈值和第二读取阈值的新值。
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3.发明授权Generating read thresholds using gradient descent and without side information 有权使用梯度下降和无旁边信息生成读取阈值公开(公告)号：US09269449B2
公开(公告)日：2016-02-23
申请号：US14550764
申请日：2014-11-21
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K. H. Lee , Jason Bellorado , Arunkumar Subramanian , Lingqi Zeng , Xiangyu Tang , Ameen Aslam
CPC classification number: G11C16/26 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/3404
Abstract: A first bit position of a cell in solid state storage is read where a sorting bit is obtained using the read of the first bit position. A second bit position of the cell is read for a first time, including by setting a first read threshold associated with the second bit position to a first value and setting a second read threshold associated with the second bit position to a second value. The second bit position of the cell is read for a second time, including by setting the first read threshold to a third value and setting the second read threshold to a fourth value. A new value for the first read threshold and for the second read threshold is generated using the sorting bit, the first read, and the second read.
Abstract translation: 读取固态存储器中的单元的第一位位置，其中使用第一位位置的读取获得排序位。 第一次读取单元的第二位位置，包括通过将与第二位位置相关联的第一读取阈值设置为第一值并将与第二位位置相关联的第二读取阈值设置为第二值。 第二次读取单元的第二位位置，包括通过将第一读取阈值设置为第三值并将第二读取阈值设置为第四值。 使用排序位，第一读取和第二读取生成第一读取阈值和第二读取阈值的新值。
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公开(公告)号：US09183095B1
公开(公告)日：2015-11-10
申请号：US14094648
申请日：2013-12-02
Applicant: SK hynix memory solutions inc.
Inventor： Derrick Preston Chu , Nandan Sridhar , Ameen Aslam
CPC classification number: G06F11/108 , G06F11/1012 , G06F11/1458
Abstract: A plurality of write data is received and combined to obtain backup write data. The plurality of write data is stored in storage. On a storage controller, the plurality of write data is released without waiting for a confirmation associated with writing the plurality of write data to the storage. The backup write data is stored.
Abstract translation: 接收并组合多个写入数据以获得备份写入数据。 多个写入数据被存储在存储器中。 在存储控制器上，释放多个写入数据，而不用等待与将多个写入数据写入存储器相关联的确认。 存储备份写入数据。
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