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公开(公告)号：US09026881B2
公开(公告)日：2015-05-05
申请号：US14146929
申请日：2014-01-03
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K. H. Lee , Jason Bellorado , Zheng Wu , Marcus Marrow
CPC classification number: H03M13/1111 , G11B2020/185 , G11B2220/2508 , H03M13/612 , H03M13/6325 , H03M13/6343 , H04L1/0054 , H04L1/0057
Abstract: A codebook which includes a plurality of messages and a plurality of codewords, a specified codeword bit value, and a specified message bit value are obtained. The LLR for bit ci in a codeword is generated, including by: identifying, from the codebook, those codewords where bit ci has the specified codeword bit value; for a message which corresponds to one of the codewords where bit ci has the specified codeword bit value, identifying those bits which have the specified message bit value; and summing one or more LLR values which correspond to those bits, in the message which corresponds to one of the codewords where bit ci has the specified codeword bit value, which have the specified message bit value.
Abstract translation: 获得包括多个消息和多个码字的码本，指定的码字比特值和指定的消息比特值。 产生码字中的比特ci的LLR，包括：从码本中识别比特ci具有指定码字比特值的那些码字; 对于与其中位ci具有指定码字比特值的码字之一相对应的消息，识别具有指定消息比特值的那些比特; 并且在对应于具有指定消息比特值的比特ci具有指定码字比特值的码字中的一个的消息中对与这些比特相对应的一个或多个LLR值求和。
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公开(公告)号：US08943386B1
公开(公告)日：2015-01-27
申请号：US13764515
申请日：2013-02-11
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K. H. Lee , Jason Bellorado , Marcus Marrow
CPC classification number: G06F11/076 , G06F11/0727
Abstract: Bin identification information for a cell is generated. An estimation function is received where the estimation function trends toward a maximum soft read value at a first end and trends toward a minimum soft read value at a second end. A soft read value is determined for the cell based at least in part on the bin identification information and the estimation function.
Abstract translation: 生成小区的小区识别信息。 接收估计函数，其中估计函数趋向于在第一端处的最大软读取值，并且趋向于在第二端处的最小软读取值。 至少部分地基于所述箱标识信息和所述估计功能为所述小区确定软读取值。
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公开(公告)号：US09842023B2
公开(公告)日：2017-12-12
申请号：US15007996
申请日：2016-01-27
Applicant: SK hynix memory solutions inc.
Inventor： Xiangyu Tang , Frederick K. H. Lee , Jason Bellorado , Arunkumar Subramanian , Lingqi Zeng
CPC classification number: G06F11/1068 , G06F11/1048 , G06F11/1072 , G11C16/26 , G11C16/34 , G11C16/3431 , G11C16/349 , G11C29/52 , H03M13/1102
Abstract: A starting read threshold is received. A first offset and a second offset is determined. A first read is performed at the starting read threshold offset by the first offset to obtain a first hard read value and a second read is performed at the starting read threshold offset by the second offset to obtain a second hard read value. A soft read value is generated based at least in part on the first hard read value and the second hard read value.
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4.发明授权公开(公告)号：US09305658B2
公开(公告)日：2016-04-05
申请号：US14546545
申请日：2014-11-18
Applicant: SK hynix memory solutions inc.
Inventor： Xiangyu Tang , Lingqi Zeng , Jason Bellorado , Frederick K. H. Lee , Arunkumar Subramanian
CPC classification number: G11C16/26
Abstract: A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.
Abstract translation: 使用被设置为默认电压的读取阈值电压的第一次迭代来执行读取以获得第一特性。 使用默认电压和偏移量产生读取阈值电压的第二次迭代。 使用读取阈值电压的第二次迭代执行读取以获得第二特性。 使用第一和第二特性产生读取阈值电压的第三次迭代。 使用读取阈值电压的第三次迭代执行读取以获得第三特性。 确定第三特性是否是最接近存储特性的两个特征之一。 如果是这样，则使用两个最接近的特征产生读取阈值电压的第四次迭代。
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5.发明授权公开(公告)号：US08937838B2
公开(公告)日：2015-01-20
申请号：US13691113
申请日：2012-11-30
Applicant: SK hynix memory solutions inc.
Inventor： Xiangyu Tang , Lingqi Zeng , Jason Bellorado , Frederick K. H. Lee , Arunkumar Subramanian
CPC classification number: G11C16/26
Abstract: An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value.
Abstract translation: 获得与固态存储中的存储值相关联的期望值以及三个或更多个点的集合，其中三个或更多个点包括电压和与存储值相关联的值。 从集合中选择具有最接近期望值的比率的两个点。 至少部分地基于所选择的两个点和期望值来确定电压。
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Patent Agency Ranking
公开(公告)号：US10185623B2
公开(公告)日：2019-01-22
申请号：US15092110
申请日：2016-04-06
Applicant: SK Hynix Memory Solutions Inc.
Inventor： Arunkumar Subramanian , Frederick K. H. Lee , Xiangyu Tang , Lingqi Zeng , Jason Bellorado
Abstract: A charge constrained bit sequence is processed to obtain a lower bound on a number of bit errors associated with the charge constrained bit sequence. The lower bound is compared against an error correction capability threshold associated with an error correction decoder. In the event the lower bound is greater than or equal to the error correction decoder threshold, an error correction decoding failure is predicted.
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7.发明授权Method and system for generating soft-information after a single read in NAND flash using expected and measured values 有权在NAND闪存中使用预期和测量值进行单次读取后生成软信息的方法和系统公开(公告)号：US09256522B1
公开(公告)日：2016-02-09
申请号：US13858781
申请日：2013-04-08
Applicant: SK hynix memory solutions inc.
Inventor： Xiangyu Tang , Lingqi Zeng , Jason Bellorado , Frederick K. H. Lee , Arunkumar Subramanian
CPC classification number: G06F12/00 , G06F11/008 , G06F11/1012 , G06F11/1072 , G06F12/0246 , G06F2212/1032 , G06F2212/2022 , G11C16/26 , G11C16/34
Abstract: A system and method for determining soft read data for a group of cells in a nonvolatile flash memory are disclosed. An expected value representative of a plurality of stored values in a group of cells is obtained. A measured value representative of the plurality of stored values in the group of cells is obtained, based on a single read to the group of cells. A soft read data for the group of cells is determined based at least in part on the expected value and the measured value. The expected and measured values may include at least one of a number of 0s, a number of 1s, a ratio of 0s to 1s or a ratio of 1s to 0s. A reliability for a bit i may be obtained using a one-step majority logic decoder, and a threshold reliability may be used when determining the soft read data.
Abstract translation: 公开了一种用于确定非易失性闪速存储器中的一组单元的软读取数据的系统和方法。 获得代表一组单元格中的多个存储值的期望值。 基于对单元格组的单次读取，获得表示该组单元格中的多个存储值的测量值。 至少部分地基于期望值和测量值确定该组单元的软读取数据。 期望值和测量值可以包括数量为0，数量1s，0s至1s的比率或1s至0s的比率中的至少一个。 使用一步多数逻辑解码器可以获得一位i的可靠性，并且当确定软读取数据时可以使用阈值可靠性。
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8.发明授权Storage of read thresholds for NAND flash storage using linear approximation 有权使用线性近似来存储NAND闪存的读取阈值公开(公告)号：US08923066B1
公开(公告)日：2014-12-30
申请号：US13852934
申请日：2013-03-28
Applicant: SK hynix memory solutions inc.
Inventor： Arunkumar Subramanian , Xiangyu Tang , Jason Bellorado , Lingqi Zeng , Frederick K. H. Lee
CPC classification number: G11C16/26 , G11C11/5642 , G11C16/3404 , G11C16/349
Abstract: A first read threshold associated with a first page in a block and a second read threshold associated with a second page in the block are received, where the first page has a first page number and the second page has a second page number. A slope and a y intercept are determined based at least in part on the first read threshold, the second read threshold, the first page number, and the second page number. The slope and the y intercept are stored with a block identifier associated with the block.
Abstract translation: 接收与块中的第一页相关联的第一读取阈值和与块中的第二页相关联的第二读取阈值，其中第一页面具有第一页面编号，并且第二页面具有第二页面编号。 至少部分地基于第一读取阈值，第二读取阈值，第一页面编号和第二页面数量来确定斜率和y截距。 斜率和y截距用与块相关联的块标识符存储。
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9.发明授权Generating read thresholds using gradient descent and without side information 有权使用梯度下降和无旁边信息生成读取阈值公开(公告)号：US08923062B1
公开(公告)日：2014-12-30
申请号：US13935714
申请日：2013-07-05
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K. H. Lee , Jason Bellorado , Arunkumar Subramanian , Lingqi Zeng , Xiangyu Tang , Ameen Aslam
CPC classification number: G11C16/26 , G11C11/5628 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/3404
Abstract: A next read threshold is determined by determining a first number of solid state storage cells having a stored voltage which falls into a first voltage range and determining a second number of solid state storage cells having a stored voltage which falls into a second voltage range. A gradient is determine by taking a difference between the first number of solid state storage cells and the second number of solid state storage cells. The next read threshold is determined based at least in part on the gradient.
Abstract translation: 通过确定具有落入第一电压范围的存储电压的第一数量的固态存储单元并且确定具有落入第二电压范围的存储电压的第二数量的固态存储单元来确定下一个读取阈值。 通过取第一数量的固态存储单元和第二数量的固态存储单元之间的差来确定梯度。 至少部分地基于梯度来确定下一个读取阈值。
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公开(公告)号：US10275297B2
公开(公告)日：2019-04-30
申请号：US14531817
申请日：2014-11-03
Applicant: SK hynix memory solutions inc.
Inventor： Frederick K. H. Lee , Jason Bellorado , Marcus Marrow
Abstract: A plurality of bins and a plurality of soft read values are stored in a lookup table where those bins that are either a leftmost bin or a rightmost bin correspond to soft read values having a maximum magnitude. Bin identification information is received for a cell in solid state storage. A soft read value is generated for the cell in solid state storage, including by: accessing the lookup table, mapping the received bin identification information to one of the plurality of bins in the lookup table, and selecting the soft read value in the lookup table that corresponds to the bin which is mapped to.
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