公开(公告)号：US07799704B2

公开(公告)日：2010-09-21

申请号：US12253687

申请日：2008-10-17

申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4404

摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

公开(公告)号：US20090093129A1

公开(公告)日：2009-04-09

申请号：US12253687

申请日：2008-10-17

申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

IPC分类号： H01L21/31

CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4404

摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

公开(公告)号：US07740706B2

公开(公告)日：2010-06-22

申请号：US11564150

申请日：2006-11-28

申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4405 ,  C23C16/45563 ,  C23C16/45591 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

公开(公告)号：US20080124944A1

公开(公告)日：2008-05-29

申请号：US11564167

申请日：2006-11-28

申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4404

摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

公开(公告)号：US20080121179A1

公开(公告)日：2008-05-29

申请号：US11564150

申请日：2006-11-28

申请人： SOONAM PARK ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

发明人： SOONAM PARK ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

IPC分类号： C23C16/52 ,  C23C16/44

CPC分类号： C23C16/4405 ,  C23C16/45563 ,  C23C16/45591 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

公开(公告)号：US07704897B2

公开(公告)日：2010-04-27

申请号：US12035603

申请日：2008-02-22

申请人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/316

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20090215281A1

公开(公告)日：2009-08-27

申请号：US12035603

申请日：2008-02-22

申请人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/469 ,  H01L21/00 ,  H05H1/24

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20100095979A1

公开(公告)日：2010-04-22

申请号：US12508381

申请日：2009-07-23

申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

IPC分类号： B08B7/00

CPC分类号： B08B7/0035 ,  C23C16/4405

摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

公开(公告)号：US07967913B2

公开(公告)日：2011-06-28

申请号：US12508381

申请日：2009-07-23

申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

IPC分类号： B08B6/00

CPC分类号： B08B7/0035 ,  C23C16/4405

摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

公开(公告)号：US09826433B2

公开(公告)日：2017-11-21

申请号：US11748412

申请日：2007-05-14

申请人： Sanjay Kamath ,  Michael A. Kongelf ,  Leif Woodahl

发明人： Sanjay Kamath ,  Michael A. Kongelf ,  Leif Woodahl

IPC分类号： H04W28/10 ,  H04L12/801 ,  H04L12/807 ,  H04L12/835 ,  H04L12/805 ,  H04W28/14 ,  H04W48/08 ,  H04W92/12

CPC分类号： H04W28/10 ,  H04L47/10 ,  H04L47/14 ,  H04L47/27 ,  H04L47/30 ,  H04L47/36 ,  H04W28/14 ,  H04W48/08 ,  H04W92/12

摘要： According to a disclosed embodiment, a flow indication counter is incremented each time a data packet is transmitted from a buffer. When the number of data packets transmitted equals or exceeds a threshold number, a flow indication message comprising the buffer window size is generated and transmitted to the base station controller. Further, flow indication messages can be generated and transmitted every threshold time interval, independently of the number of data packets transmitted to ensure that flow indication messages are sent at least every preset time interval. Moreover, a system for flow control can be constructed comprising a flow indication counter module configured to provide an updated number of data packets transmitted. The system further comprises a window size monitoring module which determines the buffer window size and a message generating module which generates a flow indication message comprising the buffer window size.