利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

62 条记录 (耗时 0.024 秒)

    GAS BAFFLE AND DISTRIBUTOR FOR SEMICONDUCTOR PROCESSING CHAMBER
    2.
    发明申请
    GAS BAFFLE AND DISTRIBUTOR FOR SEMICONDUCTOR PROCESSING CHAMBER 失效
    用于半导体加工室的气体和分配器

    公开(公告)号：US20080121179A1

    公开(公告)日：2008-05-29

    申请号：US11564150

    申请日：2006-11-28

    申请人： SOONAM PARK ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    发明人： SOONAM PARK ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    IPC分类号： C23C16/52 ,  C23C16/44

    CPC分类号： C23C16/4405 ,  C23C16/45563 ,  C23C16/45591 ,  H01J37/3244 ,  H01J37/32449

    摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

    摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

    Gas Baffle and Distributor for Semiconductor Processing Chamber
    3.
    发明申请
    Gas Baffle and Distributor for Semiconductor Processing Chamber 有权
    半导体加工室的气体挡板和分配器

    公开(公告)号：US20090093129A1

    公开(公告)日：2009-04-09

    申请号：US12253687

    申请日：2008-10-17

    申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    IPC分类号： H01L21/31

    CPC分类号： C23C16/45563 ,  C23C16/4401 ,  C23C16/4404

    摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

    摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

    Gas baffle and distributor for semiconductor processing chamber
    4.
    发明授权
    Gas baffle and distributor for semiconductor processing chamber 失效
    用于半导体处理室的气体挡板和分配器

    公开(公告)号：US07740706B2

    公开(公告)日：2010-06-22

    申请号：US11564150

    申请日：2006-11-28

    申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Sanjay Kamath ,  Young S. Lee ,  Siqing Lu

    IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： C23C16/4405 ,  C23C16/45563 ,  C23C16/45591 ,  H01J37/3244 ,  H01J37/32449

    摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

    摘要翻译： 提供了用于在半导体处理室中分配气体的装置和方法。 在一个实施例中，用于气体处理室的气体分配器包括主体。 主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。 气体偏转表面包括凹面。 凹面包括至少约75％的气体偏转表面的表面积。 凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

    In-situ process diagnostics of in-film aluminum during plasma deposition
    6.
    发明申请
    In-situ process diagnostics of in-film aluminum during plasma deposition 审中-公开
    等离子体沉积期间膜内铝的原位工艺诊断

    公开(公告)号：US20080029484A1

    公开(公告)日：2008-02-07

    申请号：US11492639

    申请日：2006-07-25

    申请人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Young S. Lee

    发明人： Soonam Park ,  Farhan Ahmad ,  Hemant P. Mungekar ,  Young S. Lee

    IPC分类号： C23F1/00 ,  G06F19/00 ,  H01L21/306 ,  H05H1/24 ,  C23C16/00

    CPC分类号： H01J37/32972 ,  C23C16/4401 ,  C23C16/52 ,  H01J37/32935

    摘要： The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.

    摘要翻译： 为了防止在衬底上沉积不可接受量的污染物，可以在诸如硅晶片的衬底的处理期间监测等离子体中各种污染物的浓度。 可以通过诸如光发射光谱仪（OES）的工具来检测和测量从等离子体通过处理室中的处理室中的窗口发射的辐射，并且可以按顺序分析对应于各种污染物的光谱中的峰的相对强度 以确定污染物浓度。 在一个实施例中，在等离子体化学气相沉积（CVD）工艺期间监测等离子体中铝的浓度，以确保所生产的装置中的铝量低于最大阈值量。

    Gapfill using deposition-etch sequence
    9.
    发明授权
    Gapfill using deposition-etch sequence 有权
    Gapfill使用沉积蚀刻序列

    公开(公告)号：US07329586B2

    公开(公告)日：2008-02-12

    申请号：US11166357

    申请日：2005-06-24

    申请人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

    发明人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

    IPC分类号： H01L21/76

    CPC分类号： H01L21/31612 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274

    摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

    摘要翻译： 方法在设置在基板处理室中的基板上沉积膜。 基板在相邻的凸起表面之间形成间隙。 将第一前体沉积气体的流动提供给基板处理室。 由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。 将膜的第一部分的足够部分回蚀刻以重新打开间隙。 向基板处理室提供第二前体沉积气体的流动。 第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上沉积薄膜的第二部分并且在重新打开的间隙内。

    Impurity control in HDP-CVD DEP/ETCH/DEP processes
    10.
    发明授权
    Impurity control in HDP-CVD DEP/ETCH/DEP processes 失效
    HDP-CVD DEP / ETCH / DEP工艺中的杂质控制

    公开(公告)号：US07745350B2

    公开(公告)日：2010-06-29

    申请号：US12204523

    申请日：2008-09-04

    申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

    发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

    IPC分类号： H01L21/311 ,  H01L21/3065

    CPC分类号： C23C16/045 ,  C23C16/4408 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76229

    摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

    摘要翻译： 公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。 此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。 这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在该部分被回蚀后终止流动卤素前体。 此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。 此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。