公开(公告)号：US20240162371A1

公开(公告)日：2024-05-16

申请号：US18504034

申请日：2023-11-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giuseppe D'ARRIGO ,  Antonella SCIUTO ,  Domenico Pierpaolo MELLO ,  Pietro Paolo BARBARINO ,  Salvatore COFFA

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/34

CPC classification number: H01L33/025 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/34

Abstract: A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

公开(公告)号：US20200028001A1

公开(公告)日：2020-01-23

申请号：US16509040

申请日：2019-07-11

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Pietro Paolo BARBARINO ,  Domenico Pierpaolo MELLO ,  Antonella SCIUTO

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/16 ,  H01L33/38

Abstract: An optical sensor includes a light-emitter device formed in a body of solid-state material with wide band gap having a surface. The light-emitter device includes a cathode region having a first conductivity type and an anode region having a second conductivity type. The anode region extends into the cathode region from the surface of the body. The anode region and the cathode region define a junction, and the cathode region has, near the junction, a peak defectiveness area accommodating vacancies in the crystalline structure due to non-bound ions or atoms of Group IV or VIII of the periodic table, which may include carbon, silicon, helium, argon, or neon. The vacancies are at a higher concentration with respect to mean values of vacancies in the anode region and in the cathode region. For example, the vacancies in the peak defectiveness area have a concentration of at least 1013 atoms/cm−3.

公开(公告)号：US20230131049A1

公开(公告)日：2023-04-27

申请号：US17962135

申请日：2022-10-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Massimo BOSCAGILA ,  Domenico Pierpaolo MELLO ,  Anna BASSI ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/02 ,  H01L21/324

Abstract: A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.