公开(公告)号：US20160307800A1

公开(公告)日：2016-10-20

申请号：US15194309

申请日：2016-06-27

Applicant: STMicroelectronics S.R.L.

Inventor： Ferruccio Frisina ,  Giuseppe Abbondanza

IPC: H01L21/78 ,  C23C16/32 ,  C23C16/01 ,  H01L21/02 ,  C23C16/458

CPC classification number: H01L21/7806 ,  C23C16/01 ,  C23C16/0218 ,  C23C16/325 ,  C23C16/4583 ,  C30B9/06 ,  C30B19/04 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02609

Abstract: An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

公开(公告)号：US10153207B2

公开(公告)日：2018-12-11

申请号：US15194309

申请日：2016-06-27

Applicant: STMicroelectronics S.R.L.

Inventor： Ferruccio Frisina ,  Giuseppe Abbondanza

IPC: C30B25/10 ,  H01L21/78 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02 ,  C30B9/06 ,  C30B19/04 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36 ,  C23C16/01 ,  C23C16/02 ,  C23C16/32 ,  C23C16/458

Abstract: An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

公开(公告)号：US10475673B2

公开(公告)日：2019-11-12

申请号：US15715940

申请日：2017-09-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ruggero Anzalone ,  Nicolo Frazzetto ,  Aldo Raciti ,  Marco Antonio Salanitri ,  Giuseppe Abbondanza ,  Giuseppe D'Arrigo

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687 ,  C23C16/32 ,  C23C16/458

Abstract: Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings. Each of the bars has side surfaces that are slanted or tilted downward such that melted material may readily flow through the openings. The support is covered with a coating of silicon carbide to prevent materials from adhering to the support. The receptacle underlies the support and is configured to collect any melted material that is drained through the openings of the support. The sponge is positioned in the receptacle and under the support. The sponge is configured to absorb any melted material that is collected by the receptacle.

公开(公告)号：US09576793B2

公开(公告)日：2017-02-21

申请号：US14788699

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Abbondanza

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/20 ,  H01L29/267

CPC classification number: H01L21/02529 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02658 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267

Abstract: An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be monocrystalline silicon carbide, and said second material may be monocrystalline silicon.

Abstract translation: 制造半导体晶片的方法的实施例包括提供单晶硅晶片，在硅晶片上外延生长第一材料的第一层，以及在第一层上外延生长第二材料层。 例如，所述第一材料可以是单晶碳化硅，并且所述第二材料可以是单晶硅。

公开(公告)号：US09406504B2

公开(公告)日：2016-08-02

申请号：US13714277

申请日：2012-12-13

Applicant: STMicroelectronics S.r.l.

Inventor： Ferruccio Frisina ,  Giuseppe Abbondanza

IPC: C30B25/12 ,  H01L21/02 ,  C30B33/00 ,  C30B33/06 ,  C30B9/06 ,  C30B19/04 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36 ,  C23C16/01 ,  C23C16/02 ,  C23C16/32

CPC classification number: H01L21/7806 ,  C23C16/01 ,  C23C16/0218 ,  C23C16/325 ,  C23C16/4583 ,  C30B9/06 ,  C30B19/04 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02609

Abstract: An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

Abstract translation: 本文所述的实施例包括用于制造第一半导体材料的晶片的方法。 所述第一半导体材料具有第一熔融温度。 该方法包括提供具有低于第一熔融温度的第二熔融温度的第二半导体材料的晶体衬底，以及将晶体衬底暴露于第一材料前体流，以在衬底上形成第一材料的第一层。 所述方法还包括使所述晶体衬底处于比所述第二熔化温度高的第一工艺温度，并且同时低于所述第一熔化温度，以这种方式，所述第二材料熔化，将所述第二熔化材料与所述第一熔化层分离 并且将第一层暴露于第一材料前体的流动，以在第一层上形成第一材料的第二层。

公开(公告)号：US20130157448A1

公开(公告)日：2013-06-20

申请号：US13714277

申请日：2012-12-13

Applicant: STMicroelectronics S.r.l.

Inventor： Ferruccio Frisina ,  Giuseppe Abbondanza

IPC: H01L21/02

CPC classification number: H01L21/7806 ,  C23C16/01 ,  C23C16/0218 ,  C23C16/325 ,  C23C16/4583 ,  C30B9/06 ,  C30B19/04 ,  C30B19/08 ,  C30B19/12 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02609

Abstract: An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

Abstract translation: 本文所述的实施例包括用于制造第一半导体材料的晶片的方法。 所述第一半导体材料具有第一熔融温度。 该方法包括提供具有低于第一熔融温度的第二熔融温度的第二半导体材料的晶体衬底，以及将晶体衬底暴露于第一材料前体流，以在衬底上形成第一材料的第一层。 所述方法还包括使所述晶体衬底处于比所述第二熔化温度高的第一工艺温度，并且同时低于所述第一熔化温度，以这种方式，所述第二材料熔化，将所述第二熔化材料与所述第一熔化层分离 并且将第一层暴露于第一材料前体的流动，以在第一层上形成第一材料的第二层。