公开(公告)号：US20240097069A1

公开(公告)日：2024-03-21

申请号：US18296016

申请日：2023-04-05

Applicant: Samsung Display Co., LTD.

Inventor： Sang Ho JEON ,  Ji Song CHAE

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/28 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0083 ,  H01L33/28 ,  H01L33/32 ,  H01L25/167

Abstract: A light emitting element includes an N-type semiconductor layer including a zinc oxide semiconductor, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The active layer has a quantum well including a barrier layer and a well layer including zinc oxide.

公开(公告)号：US20230275187A1

公开(公告)日：2023-08-31

申请号：US17978379

申请日：2022-11-01

Applicant: Samsung Display Co., LTD.

Inventor： Sang Ho JEON ,  Ji Song CHAE ,  Sang Hoon LEE ,  Jin Hyuk JANG

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075

CPC classification number: H01L33/32 ,  H01L33/382 ,  H01L33/62 ,  H01L33/20 ,  H01L25/0753

Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element includes a first semiconductor layer doped with a first-type dopant, a second semiconductor layer doped with a second-type dopant, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes at least one first material layer and at least one second material layer, wherein the at least one first material layer includes a zinc oxide (ZnO)-based material, and the at least one second material layer includes a gallium nitride (GaN)-based material.

公开(公告)号：US20250054437A1

公开(公告)日：2025-02-13

申请号：US18789753

申请日：2024-07-31

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Young LEE ,  So Hae KIM ,  Ji Song CHAE ,  Sang Gu LEE ,  Yong Woo LEE ,  Hyung Uk CHO ,  Hyun Young CHOI

IPC: G09G3/32 ,  G09G3/3266 ,  G09G3/3275

Abstract: A pixel according to embodiments of the present inventive concept includes a first transistor having a gate electrode connected to a first node; a light emitting element connected between the second electrode of the first transistor and a second power source line; a second transistor connected between the first node and a data line; a third transistor connected between the first electrode of the first transistor and a second node; a fourth transistor connected between the first power source line and the second node; and a first capacitor connected between the first node and the second node, and a reference power source and a voltage of a data signal are sequentially supplied to the data line during a horizontal period.

公开(公告)号：US20240339561A1

公开(公告)日：2024-10-10

申请号：US18604563

申请日：2024-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji Song CHAE ,  Dae Hyun KIM ,  Sang Ho PARK ,  Jae Woong YOO ,  Chul Jong YOO ,  Sang Hoon LEE ,  Joo Hee LEE ,  Jin Hyuk JANG ,  Sang Ho JEON ,  Seon Hong CHOI

IPC: H01L33/02 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44

CPC classification number: H01L33/025 ,  H01L25/167 ,  H01L33/0066 ,  H01L33/44 ,  H01L2933/0025

Abstract: A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.