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公开(公告)号：US20150155391A1
公开(公告)日：2015-06-04
申请号：US14558937
申请日：2014-12-03
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jung-Kyu LEE , Do-Hyun KWON , Min-Jung LEE , Sung-Eun LEE , Moo-Soon KO
IPC: H01L29/786 , H01L29/10 , H01L29/66
CPC classification number: H01L29/78675 , H01L29/1033 , H01L29/66757 , H01L29/78627 , H01L29/78696
Abstract: A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.
Abstract translation: 薄膜晶体管（TFT）包括半导体有源层，栅电极，源电极和漏电极。 半导体有源层包括作为源极区域的第一掺杂区域，作为漏极区域的第二掺杂区域，第一和第二掺杂区域之间的未掺杂区域。 第三掺杂区域设置在第二掺杂区域和未掺杂区域之间。 栅电极与半导体有源层绝缘，并与第三掺杂区和未掺杂区重叠。 源电极和漏电极连接到第一和第二掺杂区域。
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公开(公告)号：US20130200404A1
公开(公告)日：2013-08-08
申请号：US13761930
申请日：2013-02-07
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Yong-Su LEE , Yoon-Ho KHANG , Se-Hwan YU , Dong-Jo KIM , Min-Jung LEE
IPC: H01L27/15
CPC classification number: H01L27/156 , G02F1/13458 , G02F1/136213 , G02F1/136227 , G02F2001/136295 , H01L27/124 , H01L27/1244 , H01L27/1248
Abstract: A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.
Abstract translation: 薄膜晶体管显示面板包括：栅电极，源电极和漏电极，其包括在基板上的薄膜晶体管中; 连接到源电极的数据线; 将漏电极连接到像素电极的像素连接构件; 以及栅极焊盘，其通过栅极线连接到栅电极，并且包括第一栅极子板，第二栅极子板和栅极焊盘连接部件，其中像素连接部件和栅极焊盘连接部件的厚度基本相同。
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公开(公告)号：US20160141310A1
公开(公告)日：2016-05-19
申请号：US15006295
申请日：2016-01-26
Applicant: Samsung Display Co., Ltd.
Inventor： Sang-Ho PARK , Su-Hyoung KANG , Dong-Hwan SHIM , Yoon-Ho KHANG , Se-Hwan YU , Min-Jung LEE , Yong-Su LEE
IPC: H01L27/12
CPC classification number: H01L27/127 , H01L21/28008 , H01L27/124 , H01L27/1262 , H01L29/66742 , H01L29/66757 , H01L29/786 , H01L29/78633 , H01L29/7869
Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
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Patent Agency Ranking
4.发明申请THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权薄膜晶体管基板，具有该薄膜晶体管基板的显示装置及其制造方法公开(公告)号：US20150034912A1
公开(公告)日：2015-02-05
申请号：US14156624
申请日：2014-01-16
Applicant: Samsung Display Co., LTD.
Inventor： Do-Hyun KWON , Min-Jung LEE , Sung-Eun LEE , Il-Jeong LEE , Jung-Kyu LEE , Kwang-Young CHOI
IPC: H01L29/786 , H01L29/66 , H01L27/32
CPC classification number: H01L27/3262 , H01L29/42384 , H01L29/4908 , H01L2227/323
Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.
Abstract translation: 薄膜晶体管基板包括在基底基板上的半导体图形，设置在半导体图案上的第一绝缘构件，设置在第一绝缘构件上的第二绝缘图案，以及设置在第一绝缘构件和第二绝缘图案上的栅电极 。 第二绝缘图案与半导体图案的第一端部重叠，并且暴露出与第一端部部分相反的半导体图案的第二端部。 栅电极与第一绝缘构件和第二绝缘图案重叠。
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公开(公告)号：US20150162420A1
公开(公告)日：2015-06-11
申请号：US14623693
申请日：2015-02-17
Applicant: Samsung Display Co., Ltd.
Inventor： Sang-Ho PARK , Su-Hyoung KANG , Dong-Hwan SHIM , Yoon-Ho KHANG , Se-Hwan YU , Min-Jung LEE , Yong-Su LEE
CPC classification number: H01L27/127 , H01L21/28008 , H01L27/124 , H01L27/1262 , H01L29/66742 , H01L29/66757 , H01L29/786 , H01L29/78633 , H01L29/7869
Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。
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6.发明申请公开(公告)号：US20160027856A1
公开(公告)日：2016-01-28
申请号：US14877044
申请日：2015-10-07
Applicant: Samsung Display Co., Ltd.
Inventor： Do-Hyun KWON , Min-Jung LEE , Sung-Eun LEE , Il-Jeong LEE , Jung-Kyu LEE , Kwang-Young CHOI
IPC: H01L27/32
CPC classification number: H01L27/3262 , H01L29/42384 , H01L29/4908 , H01L2227/323
Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.
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公开(公告)号：US20140061632A1
公开(公告)日：2014-03-06
申请号：US13858584
申请日：2013-04-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Min-Jung LEE , Yoon-Ho Khang , Se-Hwan Yu , Yong-Su Lee , Jin-Young Shim , Ji-Seon Lee , Kwang-Young Choi
IPC: H01L27/12
CPC classification number: H01L27/1225 , H01L27/1244 , H01L27/1248 , H01L27/1259 , H01L29/78633 , H01L29/78636 , H01L29/7869
Abstract: A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide semiconductor disposed between the source electrode and the drain electrode; a gate insulation pattern disposed on the active pattern; a gate electrode disposed on the gate insulation pattern and overlapping with the channel; and a light-blocking pattern disposed between the base substrate and the active pattern.
Abstract translation: 1.一种薄膜晶体管基板，包括基底基板; 设置在所述基底基板上的有源图案，包括源电极，漏电极和包括设置在所述源电极和所述漏电极之间的氧化物半导体的沟道; 设置在活动图案上的栅极绝缘图案; 栅电极，设置在栅极绝缘图案上并与沟道重叠; 以及设置在基底基板和活性图案之间的遮光图案。
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公开(公告)号：US20140042429A1
公开(公告)日：2014-02-13
申请号：US13755730
申请日：2013-01-31
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Sang-Ho PARK , Su-Hyoung KANG , Dong-Hwan SHIM , Yoon-Ho KHANG , Se-Hwan YU , Min-Jung LEE , Yong-Su LEE
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L27/127 , H01L21/28008 , H01L27/124 , H01L27/1262 , H01L29/66742 , H01L29/66757 , H01L29/786 , H01L29/78633 , H01L29/7869
Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.
Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。
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