公开(公告)号：US10020352B2

公开(公告)日：2018-07-10

申请号：US15210563

申请日：2016-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin Chung ,  Bo-Geon Jeon ,  Eun-Jeong Cho ,  Hye-Hyang Park ,  Sung-Hoon Yang ,  Woo-Seok Jeon ,  Joo-Hee Jeon ,  Chaun-Gi Choi

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3258 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/7869 ,  H01L51/5253

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

公开(公告)号：US20130157399A1

公开(公告)日：2013-06-20

申请号：US13758869

申请日：2013-02-04

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Ki-Ju Im ,  Yong-Sung Park

IPC: H01L29/66 ,  H01L51/00

CPC classification number: H01L29/66969 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/0001

Abstract: A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.

Abstract translation: 包括双栅极TFT的双栅极薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置包括双栅极薄膜晶体管（TFT），其包括：在基板上的第一栅电极; 在第一栅电极上的有源层; 有源层上的源极和漏极; 所述基板上的平坦化层和所述源极和漏极，并且具有对应于所述有源层的开口; 和第二栅电极。

公开(公告)号：US10418431B2

公开(公告)日：2019-09-17

申请号：US15416653

申请日：2017-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US09614020B2

公开(公告)日：2017-04-04

申请号：US14817900

申请日：2015-08-04

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk Yang ,  Tae-Young Kim ,  Hye-Hyang Park

IPC: H01L31/036 ,  H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/423 ,  H01L21/477 ,  H01L21/4757

CPC classification number: H01L27/3262 ,  H01L21/47576 ,  H01L21/477 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

公开(公告)号：US08987120B2

公开(公告)日：2015-03-24

申请号：US13864040

申请日：2013-04-16

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L21/20 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract translation: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置及其制造方法。 在驱动电路部分的薄膜晶体管和平板显示装置的像素部分的有源沟道区域中形成的多晶硅晶粒的晶粒尺寸彼此不同。 此外，平板显示装置包括彼此具有不同粒子形状的P型和N型薄膜晶体管。

公开(公告)号：US09209423B2

公开(公告)日：2015-12-08

申请号：US14726991

申请日：2015-06-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Mu-Gyeom Kim ,  Hye-Hyang Park ,  Hyun-Sun Park

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5265 ,  H01L27/3206 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/52

Abstract: An organic light emitting display apparatus includes a substrate, a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor, a passivation layer covering the light conversion layer, a first electrode on the passivation layer, an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

Abstract translation: 一种有机发光显示装置，包括基板，基板上的光转换层，包含氧化物半导体的光转换层，覆盖光转换层的钝化层，钝化层上的第一电极，第一 电极，中间层包括有机发射层，第二电极在中间层上。

公开(公告)号：US20130230976A1

公开(公告)日：2013-09-05

申请号：US13864040

申请日：2013-04-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Yong PARK ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L21/02

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract translation: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置及其制造方法。 在驱动电路部分的薄膜晶体管和平板显示装置的像素部分的有源沟道区域中形成的多晶硅晶粒的晶粒尺寸彼此不同。 此外，平板显示装置包括彼此具有不同粒子形状的P型和N型薄膜晶体管。

公开(公告)号：US11626461B2

公开(公告)日：2023-04-11

申请号：US17338577

申请日：2021-06-03

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US11056551B2

公开(公告)日：2021-07-06

申请号：US16556166

申请日：2019-08-29

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Hyang Park ,  Joo-Hee Jeon ,  Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hui-Won Yang ,  Eun-Young Lee

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L29/51

Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

公开(公告)号：US10068923B2

公开(公告)日：2018-09-04

申请号：US15190919

申请日：2016-06-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Ho Jung ,  Chaun-Gi Choi ,  Hyeon-Sik Kim ,  Hye-Young Park ,  Hye-Hyang Park ,  Hui-Won Yang ,  Eun-Young Lee ,  Joo-Hee Jeon ,  Su-Kyoung Yang ,  Chan-Woo Yang

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.