公开(公告)号：US20240322012A1

公开(公告)日：2024-09-26

申请号：US18602274

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeonghee Son ,  Myunggil Kang ,  Dongwon Kim ,  Jongsu Kim ,  Changwoo Noh ,  Beomjin Park

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/66553 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.

公开(公告)号：US11257925B2

公开(公告)日：2022-02-22

申请号：US16836138

申请日：2020-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changwoo Noh ,  Munhyeon Kim ,  Hansu Oh ,  Sungman Whang ,  Dongwon Kim

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L29/423 ,  H01L29/165 ,  H01L21/311

Abstract: Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.

公开(公告)号：US20240405073A1

公开(公告)日：2024-12-05

申请号：US18538290

申请日：2023-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyumin Yoo ,  Myung Gil Kang ,  Dongwon Kim ,  Jongsu Kim ,  Changwoo Noh ,  Beomjin Park ,  Soojin Jeong ,  Woosuk Choi

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device is provided including an active pattern disposed on a substrate, a source/drain pattern on the active pattern, a channel pattern configured to electrically connect the source/drain patterns and including stacked semiconductor patterns spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, a gate pattern configured to cross between the source/drain patterns in a second direction parallel to the upper surface of the substrate, on the channel pattern, and to have a main gate portion and sub-gate portions, and inner gate spacers between the sub-gate portions and the source/drain pattern. A first distance between adjacent source/drain patterns along a given one of the sub-gate portions in the second direction is greater than a second distance between adjacent source/drain patterns passing through the semiconductor patterns in the second direction.

公开(公告)号：US20190198636A1

公开(公告)日：2019-06-27

申请号：US16015852

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd

Inventor： Changwoo Noh ,  Munhyeon Kim ,  Hansu Oh ,  Sungman Whang ,  Dongwon Kim

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311

CPC classification number: H01L29/6656 ,  H01L21/31144 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.