Semiconductor devices
    1.
    发明授权

    公开(公告)号:US10749030B2

    公开(公告)日:2020-08-18

    申请号:US16018121

    申请日:2018-06-26

    Abstract: A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

    Semiconductor devices
    4.
    发明授权

    公开(公告)号:US11038018B2

    公开(公告)日:2021-06-15

    申请号:US16775513

    申请日:2020-01-29

    Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

    Semiconductor devices
    5.
    发明授权

    公开(公告)号:US12289911B2

    公开(公告)日:2025-04-29

    申请号:US18378710

    申请日:2023-10-11

    Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20250015157A1

    公开(公告)日:2025-01-09

    申请号:US18599943

    申请日:2024-03-08

    Abstract: The present disclosure relates to semiconductor devices and their fabrication methods. An example semiconductor device comprises a substrate including an active pattern, a channel pattern including semiconductor patterns, a source/drain pattern connected to the semiconductor patterns, an inner gate electrode between two neighboring semiconductor patterns, an inner gate dielectric layer, and an inner high-k dielectric layer between the inner gate electrode and the inner gate dielectric layer. The inner gate dielectric layer includes an upper dielectric layer, a lower dielectric layer, and an inner spacer. A first thickness of the inner spacer is greater than a second thickness of the upper or lower dielectric layer. The first thickness is greater than a third thickness of the inner high-k dielectric layer.

    Semiconductor devices
    7.
    发明授权

    公开(公告)号:US11791381B2

    公开(公告)日:2023-10-17

    申请号:US18096663

    申请日:2023-01-13

    CPC classification number: H01L29/0847 H01L27/0886 H01L29/1608 H01L29/7854

    Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

    Semiconductor devices
    8.
    发明授权

    公开(公告)号:US12211942B2

    公开(公告)日:2025-01-28

    申请号:US17398504

    申请日:2021-08-10

    Abstract: A semiconductor device includes a first source/drain, a second source/drain isolated from direct contact with the first source/drain in a horizontal direction, a channel extending between the first source/drain and the second source/drain, a gate surrounding the channel, an upper inner spacer between the gate and the first source/drain and above the channel, and a lower inner spacer between the gate and the first source/drain and under the channel, in which the channel includes a base portion extending between the first source/drain and the second source/drain, an upper protrusion portion protruding upward from a top surface of the base portion, and a lower protrusion portion protruding downward from a bottom surface of the base portion, and a direction in which a top end of the upper protrusion portion is isolated from direct contact with a bottom end of the lower protrusion portion is oblique with respect to a vertical direction.

    Semiconductor devices
    10.
    发明授权

    公开(公告)号:US11557653B2

    公开(公告)日:2023-01-17

    申请号:US17345241

    申请日:2021-06-11

    Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

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