公开(公告)号：US20240319594A1

公开(公告)日：2024-09-26

申请号：US18493192

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanjae AHN ,  Cheol KANG ,  Minsang KIM ,  Beomseok KIM ,  Changki KIM ,  Hana KIM ,  Hyeran KIM ,  Changheon LEE ,  Sungwon CHOI ,  Hyunseok CHOI

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  G03F7/038

CPC classification number: G03F7/039 ,  C08F212/24 ,  C08F212/28 ,  C08F220/1806 ,  C08F220/1807 ,  G03F7/038

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition includes a polymer including a first repeating unit repeating unit Formula 1, a photoacid generator, and an organic solvent.




In Formula 1, L11 to L13, a11 to a13, A11 to A13, R11 to R14, b12 to b14, and p are the same as described in the detailed description.

公开(公告)号：US20240317672A1

公开(公告)日：2024-09-26

申请号：US18483911

申请日：2023-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmitry ANDROSOV ,  Cheol KANG ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Beomseok KIM ,  Hana KIM ,  Hoyoon PARK

IPC: C07C69/94 ,  G03F7/038 ,  G03F7/039

CPC classification number: C07C69/94 ,  G03F7/0385 ,  G03F7/039 ,  C07C2601/08 ,  C07C2603/54

Abstract: Disclosed are a polycarboxylate compound represented by Formula 1 below, a resist composition including the same, and a method of forming a pattern using the same.




In Formula 1, A11, X11, m11, n11, R13 and b13 are as described in the specification.

公开(公告)号：US20250021003A1

公开(公告)日：2025-01-16

申请号：US18537601

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol KANG ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Beomseok KIM ,  Hana KIM ,  Hoyoon PARK ,  Chanjae AHN ,  Jaejun LEE ,  Sungwon CHOI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below, a resist composition including the same, a method of forming a pattern by using the same, and a monomer represented by Formula 10 below. In Formulae 1 and 10, L11 to L13, a11 to a13, X11, Rf, and R11 to R13 are as described in the specification.

公开(公告)号：US20250123563A1

公开(公告)日：2025-04-17

申请号：US18601349

申请日：2024-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaejun LEE ,  Cheol KANG ,  Hana KIM ,  Sungan DO ,  Yonghoon MOON

IPC: G03F7/039 ,  C08F218/00 ,  C08F220/18 ,  C08F220/30

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below and a second repeating unit represented by Formula 2 below, a resist composition including the same, and a method of forming a pattern using the same. In Formulae 1 and 2, L11 to L13, L21 to L24, a11 to a13, a21 to a24, A11, A21, X11, R11, R12, R21 to R23, b12, b22, b23, p11 and p21 are as described above in the specification.

公开(公告)号：US20250138424A1

公开(公告)日：2025-05-01

申请号：US18613917

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmitry ANDROSOV ,  Cheol KANG ,  Hana KIM ,  Sungan DO ,  Yonghoon MOON ,  Hoyoon PARK ,  Jaejun LEE

IPC: G03F7/039

Abstract: Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition: wherein a description of Formula 1 is provided in the present specification.