公开(公告)号：US20240145541A1

公开(公告)日：2024-05-02

申请号：US18313630

申请日：2023-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Da Hye KIM ,  Jin Bum KIM ,  Gyeom KIM ,  Young Kwang KIM ,  Kyung Bin CHUN

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes an active pattern including a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction. The sheet patterns include an uppermost sheet pattern and a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction. Each of the plurality of gate structures includes a gate electrode and a gate insulating film and a source/drain pattern between adjacent ones of the plurality of gate structures. Each of inner gate structures includes a gate electrode and a gate insulating film. A semiconductor liner film includes silicon-germanium, and contacts the gate insulating film of each of the inner gate structures. A portion of the semiconductor liner film protrudes upwardly in the first direction beyond an upper surface of the uppermost sheet pattern.

公开(公告)号：US20240153991A1

公开(公告)日：2024-05-09

申请号：US18229218

申请日：2023-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyeom KIM ,  Da Hye KIM ,  Young Kwang KIM ,  Jin Bum KIM ,  Kyung Bin CHUN

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern; a gate structure disposed on the lower pattern; and a source/drain pattern disposed on the lower pattern, and connected to each of the plurality of sheet patterns, wherein the plurality of sheet patterns include a first sheet pattern and a second sheet pattern. The second sheet pattern is disposed between the first sheet pattern and the lower pattern. A first upper width of an upper surface of the first sheet pattern is greater than a first lower width of a bottom surface of the first sheet pattern, and a second upper width of an upper surface of the second sheet pattern is smaller than a second lower width of a bottom surface of the second sheet pattern.

公开(公告)号：US20210057317A1

公开(公告)日：2021-02-25

申请号：US16819318

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho PARK ,  Da Hye KIM ,  Jin-Woo PARK ,  Jae Gwon JANG

IPC: H01L23/498 ,  H01L23/31

Abstract: A semiconductor package having a redistribution structure including a first face and a second face and a first semiconductor chip mounted on the first face. The semiconductor package may further include a first redistribution pad exposed from the second face of the redistribution structure and a second redistribution pad exposed from the second face of the redistribution structure. The semiconductor package may further include a first solder ball being in contact with the first redistribution pad and a second solder ball being in contact with the second redistribution pad. In some embodiments, a first distance of the first redistribution pad is smaller than a second distance of the second redistribution pad, the first and second distances are measured with respect to a reference plane that intersects a lower portion of the first solder ball and a lower portion of the second solder ball.

公开(公告)号：US20210098626A1

公开(公告)日：2021-04-01

申请号：US16910819

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum KIM ,  Gyeom KIM ,  Da Hye KIM ,  Jae Mun KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Kyung In CHOI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US20220123145A1

公开(公告)日：2022-04-21

申请号：US17565650

申请日：2021-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum KIM ,  Gyeom KIM ,  Da Hye KIM ,  Jae Mun KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Kyung In CHOI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US20210050298A1

公开(公告)日：2021-02-18

申请号：US16874284

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Da Hye KIM ,  Dong Kyu KIM ,  Jung-Ho PARK

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/16 ,  H01L25/00 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56

Abstract: A method for fabricating a semiconductor package includes forming a release layer on a first carrier substrate. An etch stop layer is formed on the release layer. A first redistribution layer is formed on the etch stop layer and includes a plurality of first wires and a first insulation layer surrounding the plurality of first wires. A first semiconductor chip is formed on the first redistribution layer. A solder ball is formed between the first redistribution layer and the first semiconductor chip. A second carrier substrate is formed on the first semiconductor chip. The first carrier substrate, the release layer, and the etch stop layer are removed. The second carrier substrate is removed.

公开(公告)号：US20180026924A1

公开(公告)日：2018-01-25

申请号：US15642695

申请日：2017-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Hyun HAN ,  Da Hye KIM ,  Bo Keun KIM

IPC: H04L12/58 ,  A61B5/024 ,  H04L29/08

CPC classification number: H04L51/046 ,  A61B5/00 ,  A61B5/024 ,  A61B5/681 ,  H04L51/02 ,  H04L51/18 ,  H04L67/18 ,  H04W4/02

Abstract: An electronic device and method are disclosed herein. The electronic device includes a display, a memory storing biometric information and function information, and a processor. The processor implements the method, including detecting whether a received textual message includes a keyword, when the received textual message includes a predesignated keyword, retrieve particular bio-information corresponding to the keyword from the stored bio-information, and a particular function information from the stored function information, generating one or more textual responses to the received textual message based on the retrieved particular bio-information and the particular function information, and controlling the display to display an answer list including the generated one or more textual responses.