公开(公告)号：US20250004370A1

公开(公告)日：2025-01-02

申请号：US18392365

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomseok KIM ,  Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI

IPC: G03F7/038 ,  C08F12/22 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1, a resist composition including the polymer, and a method of forming a pattern using the resist composition: wherein descriptions of L11 to L14, a11 to a13, A11, X11, R11, R12, b12 and p in Formula 1 are provided in the present specification.

公开(公告)号：US20250043046A1

公开(公告)日：2025-02-06

申请号：US18405175

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Jeongho MUN ,  Seonghyeon AHN ,  Chanjae AHN ,  Jaejun LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Sungwon CHOI

IPC: C08F120/28 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 and having a glass transition temperature of 50° C. or less, a polymer-containing composition including the polymer, and a method of forming a pattern by using the polymer-containing composition: wherein, in Formula 1, descriptions of L11 to L13, a11 to a13, An, R11, R12, b12, and p1 are provided in the present specification.

公开(公告)号：US20250021003A1

公开(公告)日：2025-01-16

申请号：US18537601

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol KANG ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Beomseok KIM ,  Hana KIM ,  Hoyoon PARK ,  Chanjae AHN ,  Jaejun LEE ,  Sungwon CHOI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below, a resist composition including the same, a method of forming a pattern by using the same, and a monomer represented by Formula 10 below. In Formulae 1 and 10, L11 to L13, a11 to a13, X11, Rf, and R11 to R13 are as described in the specification.

公开(公告)号：US20240337928A1

公开(公告)日：2024-10-10

申请号：US18613810

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hana KIM ,  Haengdeog KOH ,  Hyeran KIM ,  Youngmin NAM ,  Giyoung SONG ,  Changheon LEE ,  Aram JEON ,  Jungha CHAE ,  Songse YI ,  Sukkoo HONG

IPC: G03F7/004

CPC classification number: G03F7/0045

Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition.




A description of Formula 1 is provided herein.

公开(公告)号：US20240199540A1

公开(公告)日：2024-06-20

申请号：US18312825

申请日：2023-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyoon PARK ,  Hana KIM ,  Kyuhyun IM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Hyeran KIM ,  Changheon LEE

IPC: C07C323/09 ,  G03F7/004 ,  G03F7/20

CPC classification number: C07C323/09 ,  G03F7/0042 ,  G03F7/2004 ,  G03F7/2059 ,  C07C2601/16

Abstract: Provided are a carboxylate salt represented by Formula 1, a photoresist composition including the same, and a pattern forming method using the same:






wherein A11, L11, L12, a11, a12, R11 to R13, b13, n11, n12, and M+ in Formula 1 are defined as described in the specification.

公开(公告)号：US20230161245A1

公开(公告)日：2023-05-25

申请号：US18047030

申请日：2022-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsang KIM ,  Haengdeog KOH ,  Hana KIM ,  Yoonhyun KWAK ,  Hyeran KIM ,  Eunkyung LEE ,  Aram JEON

IPC: G03F7/004 ,  G03F7/039 ,  C08F220/18

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  C08F220/1807

Abstract: Provided are a photoacid generator, a photoresist composition including the same, and a method of forming a pattern by using the photoacid generator. The photoacid generator includes a copolymer of a monomer that generates an acid upon exposure to light and an acid-labile monomer of which solubility with respect to a developing solvent is changed by decomposition by an acid, wherein the copolymer is represented by Formula 1:






wherein, in Formula 1, x, y, L, A−, B+, R1, R2, and R3 are each the same as described in the detailed description.

公开(公告)号：US20240319595A1

公开(公告)日：2024-09-26

申请号：US18612246

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyoon PARK ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Beomseok KIM ,  Hana KIM ,  Hyeran KIM ,  Chanjae AHN ,  Kyuhyun IM ,  Sungwon CHOI

IPC: G03F7/039

CPC classification number: G03F7/039

Abstract: Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:




A description of Formula 1 is provided herein.

公开(公告)号：US20240317672A1

公开(公告)日：2024-09-26

申请号：US18483911

申请日：2023-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmitry ANDROSOV ,  Cheol KANG ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Beomseok KIM ,  Hana KIM ,  Hoyoon PARK

IPC: C07C69/94 ,  G03F7/038 ,  G03F7/039

CPC classification number: C07C69/94 ,  G03F7/0385 ,  G03F7/039 ,  C07C2601/08 ,  C07C2603/54

Abstract: Disclosed are a polycarboxylate compound represented by Formula 1 below, a resist composition including the same, and a method of forming a pattern using the same.




In Formula 1, A11, X11, m11, n11, R13 and b13 are as described in the specification.

公开(公告)号：US20240231225A1

公开(公告)日：2024-07-11

申请号：US18325465

申请日：2023-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Youngmin NAM ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0044 ,  G03F7/2004 ,  G03F7/32

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition may include an organometallic compound represented by Formula 1 below and a polymer repeating unit represented by Formula 2 below.




In Formulas 1 and 2, descriptions of M11, R11, R12, n, A21, L21 to L24, a21 to a24, R21, R22, b22, p, and X21 refer to the specification.

公开(公告)号：US20240124635A1

公开(公告)日：2024-04-18

申请号：US18164841

申请日：2023-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Beomseok KIM ,  Chanjae AHN ,  Jungha CHAE ,  Sungwon CHOI

IPC: C08F228/06 ,  G03F7/038 ,  G03F7/20

CPC classification number: C08F228/06 ,  G03F7/038 ,  G03F7/2004

Abstract: Provided are a polymer, a resist composition including the same, and a method of forming a pattern using the resist composition, the polymer including one or more of a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2, and free of a repeating unit of which a structure changes by an acid:




In Formulae 1 and 2, R11 to R16, b12, X−, R21 to R24, b22, and Y are as described in the specification.